RBR71L
Abstract: No abstract text available
Text: Radial Lead Precision Wirewound Resistors RB / RBR, HR / 4000, PC Series RB / RBR, HR / 4000, PC Series 2ADIAL ,EAD 0RECISION •7IREwOUND 2ESISTORS 0.1 to 0.6 watts · Tolerance to ±.01% · 0.1 ohm to 3 meg ohms s TO wATTS · Approved to M, P, & R levels
|
Original
|
MIL-R-93
MIL-R-39005
HR340
HRISTITEXAS53!
RBR71L
|
PDF
|
VDE0879-3
Abstract: mercedes hella positioning sensor zener alternator rectifier starting key benz BTS120 BTS149 BTS307 BTS550P BTS640S2
Text: 17. Meeting ‘Elektronik im Kraftfahrzeug’ Munich, June 3-4, 1997 Intelligent 42V Power Semiconductors Intelligent Power Semiconductors for Future Automotive Electrical Systems Dr. Alfons Graf, Siemens Power Semiconductors, HL LH TM 2 Hr. Dieter Vogel, Siemens Power Semiconductors, HL LH TM
|
Original
|
2V/14V,
HDT972E
VDE0879-3
mercedes
hella positioning sensor
zener alternator rectifier
starting key benz
BTS120
BTS149
BTS307
BTS550P
BTS640S2
|
PDF
|
Circuit diagram of Car battery jump starter
Abstract: TEMPFET BTS149 equivalent mercedes TLE5216 BTS307 hella positioning sensor starting key benz BTS120 BTS149
Text: 17. Meeting ‘Elektronik im Kraftfahrzeug’ Munich, June 3-4, 1997 Intelligent 42V Power Semiconductors Intelligent Power Semiconductors for Future Automotive Electrical Systems Dr. Alfons Graf, Siemens Power Semiconductors, HL LH TM 2 Hr. Dieter Vogel, Siemens Power Semiconductors, HL LH TM
|
Original
|
2V/14V,
HDT972E
Circuit diagram of Car battery jump starter
TEMPFET
BTS149 equivalent
mercedes
TLE5216
BTS307
hella positioning sensor
starting key benz
BTS120
BTS149
|
PDF
|
Untitled
Abstract: No abstract text available
Text: h Value High Value rfaceSurface Mount Resistor Mount Resistor Wrap-around terminations for soldering HR Series ies High Value • 100M ohms to 50G ohms Mount Resistor ·Surface Low voltage coefficient of resistance Organic Protection · Lead free only Tin/lead Solder
|
Original
|
|
PDF
|
20APR1
Abstract: No abstract text available
Text: 172316-10 NOTE: REVISIONS REV DRAWING NO. A THIRD ANGLE PROJ. 1. CONTACT PIN TO SOLDER DESCRIPTION DATE RELEASE TO MFG. 20-Apr-11 ECO APPR - HR 2. IP 67 RATED 0.787" [20.00] MM SCALE 1.250 0.319" [8.10] MM 0.020" [0.50] MM 0.094" [2.40] MM 0.094" [2.40] MM
|
Original
|
20-Apr-11
20-Apr-11
RG-58C/U
42A/U
223/U)
20APR1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 182319-10 REVISIONS REV DRAWING NO. DESCRIPTION NC THIRD ANGLE PROJ. RELEASE TO MFG. A ECO 01-May-04 - 07-Jun-00 UPDATE DRAWING FORMAT DIMENSIONS 50.50 WAS 52.00 14.00 WAS 13.80 B DATE - 29-Mar-11 SCALE APPR G.R.S 2154 HR 1.250 1.98" [50.50]MM 5/8-24-UNEF-2A
|
Original
|
07-Jun-00
01-May-04
29-Mar-11
5/8-24-UNEF-2A
TASK-592
|
PDF
|
Micro Coax 1.13mm
Abstract: No abstract text available
Text: 336212-12-XXXX NOTES: REVISIONS REV DRAWING NO. 1. PACKAGE CABLE ASSEMBLY IN BAG.TAG IN BAG WITH "AMPHENOL CONNEX, 336212-12 A THIRD ANGLE PROJ. -XXXX AND DATE CODE". DESCRIPTION DATE RELEASE TO MFG. 08-FEB-11 ECO - APPR HR 2. CABLE ASSEMBLY TO BE 100% TESTED FOR CONTINUITY, SHORTS AND OPEN.
|
Original
|
336212-12-XXXX
08-FEB-11
08-Feb-11
assembly/336212-12-XXXX
Micro Coax 1.13mm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 47022 REVISIONS REV DRAWING NO. NOTE: DESCRIPTION A THIRD ANGLE PROJ. DATE RELEASE TO MFG. 19-Apr-11 ECO - APPR HR 1. HANDLE TO BE TRANSPARENT RED. 1"x3 3/4", 4 FLUTE SCALE 0.500 12.000" REF [304.80] MM 0.400" REF [10.16] MM 1.304" REF [33.12] MM 1. UNLESS OTHERWISE SPECIFIED, DIMENSIO NS ARE IN INCHES AND TOLERANCES ARE:
|
Original
|
19-Apr-11
TASK-604
|
PDF
|
BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6= ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
|
Original
|
BSZ520N15NS3
marking 6B
s4si
6B104
I6025
marking a6b
|
PDF
|
55B5
Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Text: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#
|
Original
|
IPB036N12N3
65AE5
55B5
IPB036N12N
marking eb5
Diode 9H
diode 1D
marking G9
|
PDF
|
marking EB diode
Abstract: Q451 ee 19 8b qg
Text: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H, & Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,
|
Original
|
IPP057N08N3
IPI057N08N3
IPB054N08N3
marking EB diode
Q451
ee 19 8b qg
|
PDF
|
IPD320N20N3
Abstract: marking EB5
Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
|
Original
|
IPD320N20N3
7865AE5
marking EB5
|
PDF
|
IPB025
Abstract: IPB025N08N3 G
Text: IPB025N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H 0 J Q ' 3 81>>5< >? B=1<<5F5< R 9H"[Z#$YMd *&- Y" Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 *( 6 @B5F9? EC 5>79>55B9 >7 C1=@<5 3 ? 45 ?E7(*8C(0C Q. 5BI <? G ? > B5C9CD
|
Original
|
IPB025N08N3
IPB025
IPB025N08N3 G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
|
Original
|
IPB042N10N3
IPI045N10N3
IPP045N10N3
|
PDF
|
|
|
marking EB5
Abstract: 5CC1
Text: BSC320N20NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +. 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9
|
Original
|
BSC320N20NS3
7865AE5
marking EB5
5CC1
|
PDF
|
IPD600N25N3 G
Abstract: No abstract text available
Text: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
|
Original
|
IPD600N25N3
7865AE5
IPD600N25N3 G
|
PDF
|
IPB027N10N3
Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
Text: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
|
Original
|
IPB027N10N3
7865AE5
marking 1D
55B5
Q451
EB5 MARKING
marking G9
|
PDF
|
4b 5c marking
Abstract: No abstract text available
Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
|
Original
|
BSC360N15NS3
4b 5c marking
|
PDF
|
BLF542
Abstract: UBB776
Text: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch
|
OCR Scan
|
GG3G10b
BLF542
OT171
PINNING-SOT171
MBA931
MRA733
BLF542
UBB776
|
PDF
|
punching oil
Abstract: MARKING CODE H33
Text: A COMPANY OF METAL OXIDE FILM Power type H./HR./HL. VISHAY C O M P O M ^ T S U.K. Features • low inductance • low voltage coefficient • suitable for water cooling • excellent overload characteristics • suitable for dummy load applications Style
|
OCR Scan
|
H31/R31
H33/R33
H35/R35
H37/R37
H39/R39
HL250
HL500
HL1000
punching oil
MARKING CODE H33
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RR-HR D-Sub connectors - Stamped and Formed Contacts REAR RELEASE CRIMP CONNECTORS oo l_ > t— « ►— GO I— l Specifications Designed fo r high volume production, Am phenol's rear • Connectors according to MIL C24308 release crim p connector and cn
|
OCR Scan
|
C24308
|
PDF
|
ci237
Abstract: AAS-100 75151 ci237 ha scr Igt 1mA
Text: r Z Z SGS-THOMSON * 7 £ TLS 106 H D g » I[L I(g îM O (g i SENSITIVE GATE SCR FEATURES • LOWIg t ^ 200nA . LOWIr ^ 5mA ■ hr(RMS =4A DESCRIPTION The TLS 106 Silicon Controlled Rectifiers are high performance MESA diffused PNPN devices glass passivated sensitive gate technology.
|
OCR Scan
|
CI237
ci237
AAS-100
75151
ci237 ha
scr Igt 1mA
|
PDF
|
3S111
Abstract: U201A NJU201AD E3R3 DG201A NJU201A NJU201AM NJU7301
Text: HR A N J U 2 O 1A C-M OS QUAD SPST ANALOG SW ITCH PACKAGE OUTLINE GENERAL DESCRIPTION The NJU201A is a quad break-before-make SPST analog switch protected up to 44V operating voltage. All switches are controlled by TTL or C-MOS compati ble input. The low on-state resistance is about half compare
|
OCR Scan
|
NJU20
NJU201A
NJU7301.
DG201A.
NJU201AD
NJU201AM
1000pF,
100kHz
100kHz,
3S111
U201A
NJU201AD
E3R3
DG201A
NJU201AM
NJU7301
|
PDF
|
V4163
Abstract: No abstract text available
Text: PRELIMINARY IDT7M P V4161 IDT7M P V4162 IDT7M P V4163 1 28K/256K/51 2K x 36 S Y N C HR O N O U S SRAM MODULE FAMILY Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • Pin com patible flow-through synchronous m odule fam ily The IDT7MPV4161 is constructed using 64K x 36 flow
|
OCR Scan
|
28K/256K/51
V4161
V4162
V4163
128K/256K
IDT7MPV4161
PV4161
V4163
|
PDF
|
