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    HUF76121S3ST Price and Stock

    Rochester Electronics LLC HUF76121S3ST

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF76121S3ST Bulk 606
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    Fairchild Semiconductor Corporation HUF76121S3ST

    47A, 30V, 0.028ohm, N-Channel Power MOSFET, TO-263AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF76121S3ST 4,000 1
    • 1 $0.4767
    • 10 $0.4767
    • 100 $0.4481
    • 1000 $0.4052
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    HUF76121S3ST Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76121S3ST Fairchild Semiconductor 47 A, 30 V, 0.021 ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76121S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    76121P

    Abstract: 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121P3, HUF76121S3S 1999ucts 76121P 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 PDF

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


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    fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 PDF

    76121P

    Abstract: 133E-9
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121P3, HUF76121S3S 76121P 133E-9 PDF

    76121P

    Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
    Text: HUF76121P3, HUF76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology


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    HUF76121P3, HUF76121S3S HUF76 121P3, HUF76 121S3S low30V, HUF76121 76121P 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5 PDF

    76121p

    Abstract: No abstract text available
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121P3, HUF76121S3S 2002lopment. 76121p PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    76121P

    Abstract: 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121P3, HUF76121S3S 76121P 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 PDF

    76121P

    Abstract: 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4
    Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF76121P3, HUF76121S3S 76121P 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4 PDF

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd PDF

    76121S

    Abstract: 76121P TA761
    Text: HUF76121P3, HUF76121S3, HUF76121S3S Semiconductor Data Sheet 49A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121P3, HUF76121S3, HUF76121S3S O-263AB HUF76121S3S O-263AB 76121S 76121P TA761 PDF

    76121P

    Abstract: 76121S
    Text: in t e la i I HUF76121P3, HUF76121S3S D a ta S h e e t 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channei power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121P3, HUF76121S3S HUF76121S3S AN7254 AN7260. 76121P 76121S PDF

    76121P

    Abstract: No abstract text available
    Text: HUF76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF76121P3, HUF76121S3S HUF76121 76121P PDF