ignition driver
Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
ignition driver
fairchild Resonant IC
FJAFS1510ATU
FDC655
HV cascode smps
cascode smps
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Untitled
Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
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Untitled
Abstract: No abstract text available
Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC06IE170HV
2002/93/EC
O247-4L
STC06IE170HV
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HV cascode smps
Abstract: C06IE170HV JESD97 STC06IE170HV
Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC06IE170HV
O247-4L
STC06IE170HV
HV cascode smps
C06IE170HV
JESD97
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HV cascode smps
Abstract: STC05DE120HV JESD97 flyback smps c05de
Text: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance
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STC05DE120HV
150kHz
2002/93/EC
O247-4L
STC05DE120HV
HV cascode smps
JESD97
flyback smps
c05de
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STC04IE170HV
Abstract: C04IE170HV JESD97 2a 280
Text: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC04IE170HV
2002/93/EC
O247-4L
STC04IE170HV
C04IE170HV
JESD97
2a 280
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STC04IE170HV
Abstract: C04IE170HV JESD97
Text: STC04IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17 W General features Table 1. • General features VCS ON IC RCS(ON) 0.7V 4A 0.17Ω High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC04IE170HV
2002/93/EC
O247-4L
STC04IE170HV
C04IE170HV
JESD97
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emitter switched bipolar transistor
Abstract: C12IE90HV JESD97 STC12IE90HV
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
C12IE90HV
JESD97
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HV cascode smps
Abstract: JESD97 STC05DE120HV
Text: STC05DE120HV Hybrid emitter switched bipolar transistor ESBT 1200V - 5A - 0.18 W Target Specification General features Table 1. General features VCS ON IC RCS(ON) 0.9V 5A 0.18Ω • High voltage / low current Cascode configuration ■ Low equivalent on resistance
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STC05DE120HV
150kHz
2002/93/EC
STC05DE120HV
HV cascode smps
JESD97
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C08IE150HV
Abstract: JESD97 STC08IE150HV HV cascode smps
Text: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V
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STC08IE150HV
O247-4L
STC08IE150HV
C08IE150HV
JESD97
HV cascode smps
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Untitled
Abstract: No abstract text available
Text: STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15Ω PRELIMINARY DATA Features VCS ON IC RCS(ON) 0.7V 6A 0.15Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz
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STC06IE170HV
STC06IE170HV
O247-4L
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Untitled
Abstract: No abstract text available
Text: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features • VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz
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STC04IE170HV
O247-4L
STC04IE170HV
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emitter switched bipolar transistor
Abstract: No abstract text available
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
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STC04IE170HV
Abstract: C04IE170HV 12676
Text: STC04IE170HV Monolithic emitter switched bipolar transistor ESBT 1700 V - 4 A - 0.17 Ω Features VCS ON IC RCS(ON) 0.7 V 4A 0.17 Ω • High voltage / high current cascode configuration ■ Low equivalent ON resistance ■ Very fast-switch: up to 150 kHz
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STC04IE170HV
O247-4L
STC04IE170HV
C04IE170HV
12676
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hv 102 st
Abstract: C08IE120HV STC08IE120HV JESD97 HV cascode smps
Text: STC08IE120HV Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz ■
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STC08IE120HV
O247-4L
STC08IE120HV
hv 102 st
C08IE120HV
JESD97
HV cascode smps
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transistor SMD 12W MOSFET
Abstract: transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 ICE1B265 smd transistor code 12w HV cascode smps ICE2B265 smd transistor 12w
Text: Version 1.1, March 2008 Application Note CoolSET & CoolMOS™ Ultra Wide Input Range, HV-BIAS Supply for SMPS with ICE2B265 and SPA02N80 Author: Bernd Ilchmann Finepower GmbH Published by Infineon Technologies AG http://www.infineon.com/coolset Power Management & Supply
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ICE2B265
SPA02N80
ICE1B265
transistor SMD 12W MOSFET
transistor SMD 12W
SMD Code 12W SOT23
ICE2B265 Application Note
AN-EvalMF2-ICE2A0565Z-1
ICE1B265
smd transistor code 12w
HV cascode smps
smd transistor 12w
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Untitled
Abstract: No abstract text available
Text: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V
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STC08IE150HV
O247-4L
STC08IE150HV
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Untitled
Abstract: No abstract text available
Text: STC08IE120HV Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz ■
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STC08IE120HV
O247-4L
STC08IE120HV
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STC04IE170HV
Abstract: C04IE170HV JESD97 C04IE17 forward smps
Text: STC04IE170HV Emitter Switched Bipolar Transistor ESBT 1700 V - 4 A - 0.15 Ω Features DATA BRIEF VCS ON IC RCS(ON) 0.6 V 4A 0.15 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ
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STC04IE170HV
O247-4LHV
STC04IE170HV
C04IE170HV
JESD97
C04IE17
forward smps
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Untitled
Abstract: No abstract text available
Text: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when
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FJP2145
FDC655
FJP2145
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J1720
Abstract: smps ic GKJ FDS8817
Text: FJAFS1720 ESBC Rated NPN Power Transistor ESBC Features FDS8817 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON) 0.304 V 10 A 0.0304 Ω (1) The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when
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FJAFS1720
FDS8817
J1720
smps ic GKJ
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Untitled
Abstract: No abstract text available
Text: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when
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FJPF2145
FDC655
FJPF2145
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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SAA4849PS
Abstract: crt monitor circuit diagram saa4849 crt monitor block diagram IC SAA4849PS crt monitor PCB LAYOUT EHT COIL microcontroller for crt monitor EHT Transformer list TDA4863AJ
Text: APPLICATION NOTE SAA4848/SAA4849 digital deflection controller plus microcontroller for CRT monitor AN10281_1 Philips Semiconductors TP97035.3/W97 TRAD Philips Semiconductors SAA4848/SAA4849 digital deflection controller plus microcontroller for CRT monitor
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SAA4848/SAA4849
AN10281
TP97035
3/W97
SAA4848PS/SAA4849PS
TDA4856.
0x000000FF)
SAA4849PS
crt monitor circuit diagram
saa4849
crt monitor block diagram
IC SAA4849PS
crt monitor PCB LAYOUT
EHT COIL
microcontroller for crt monitor
EHT Transformer list
TDA4863AJ
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