HV6264A
Abstract: hy6264a A12CE I0530
Text: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY6264A
HV6264A
70/85/100/120ns
1DB01-11-MAY95
330mil
048W2
1DB01
A12CE
I0530
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Untitled
Abstract: No abstract text available
Text: HY6264A •Hyundai SEMICONDUCTOR 8KX 8-Bit CM OS SRAM M261201B-MAY92 DESCRIPTION FEATURES The HY6264A is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica ted using a twin tub CMOS process technolo gy. This high reliability process coupled with
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OCR Scan
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PDF
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HY6264A
M261201B-MAY92
85/100/120/150ns
HY6264A
-600M
-330M
IAI31AI
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