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    pt 2358

    Abstract: 159330 17089
    Text: HWF1681NC HEXAWAVE High Power GaAs FET September 1998 Features • H igh O u tp ut Pow er • H igh G ain • H igh Efficiency • H igh L inearity • Class A o r Class AB O peration Outline Drawing PidB=34.5dBm typ. @2.4GHz Gl= 12dB(typ.)@2.4GHz r|a d d


    OCR Scan     		PDF HWF1681NC 48dBm HWF1681NC pt 2358 159330 17089