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    HWF1686NC Search Results

    HWF1686NC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HWF1686NC Hexawave 3.5 W L-band power FET non-via hole chip Original PDF

    HWF1686NC Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HWF1686NC 123456789ABC7DEF7 952 47 9B7 7 Autumn 2002 V1 Features 12 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=15dB(typ.) High Efficiency: PAE =45%(typ.) High Linearity: IP3=45dBm(typ.) Class A or Class AB Operation Description Outline Dimensions


    Original     		PDF HWF1686NC 123456789ABC7DEF7 30dBm 45dBm

    GS 3585

    Abstract: 155910 57640 ic 40730 99240
    Text: HWF1686NC HSXAWAVS Medium Power GaAs FET September 1998 Rev.B Features Output Power PidB=30dBm typ. @2.4GHz Outline Drawing High Gain G l= 15dB(typ.)@2.4GHz Unit : £ gn Thickness: 100; High Efficiency 650 iladd =45%(typ.)@2.4GHz All Bond Pads: High Linearity


    OCR Scan     		PDF 30dBm HWF1686NC 45dBm HWF1686NC GS 3585 155910 57640 ic 40730 99240