Bosch 5.4 abs
Abstract: BOSCH marking code Bosch 5.4 abs diagram Bosch 5.7 abs bosch 5.3 abs bosch abs 5.4 BOSCH abs 5,3 bosch accelerometer sensor PROTOCOL abs bosch bosch 5.7
Text: Preliminary Datasheet SMB365 Bosch Sensortec Three-axis accelerometer Triaxial ±2g/±10g Accelerometer SMB365 KEY FEATURES - Three-axis accelerometer Switchable g-range 2g/10g Standard SMD package: QFN 4.0x4.0 mm2 footprint, 1.2mm height 4mg resolution at 50Hz bandwidth
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SMB365
2g/10g)
SMB365
02-Feb-06
27-Apr-06
27-May-06
30-May-06
7211RB11.
Bosch 5.4 abs
BOSCH marking code
Bosch 5.4 abs diagram
Bosch 5.7 abs
bosch 5.3 abs
bosch abs 5.4
BOSCH abs 5,3
bosch accelerometer sensor
PROTOCOL abs bosch
bosch 5.7
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WIMA MKS4
Abstract: No abstract text available
Text: D WIMA DC-LINK HY NEW Metallized Polypropylene PP Capacitors for Hybrid Drives Special Features ˜ Very high volume/capacitance ratio ˜ Self-healing, internal safety disconnector ˜ Safe contact configuration by screwable plates ˜ Dry construction without electrolyte
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2011/65/EU
WIMA MKS4
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WIMA MKS 3
Abstract: wima mkxr MKP-X2 WIMA FKP1 0,22 1250 600 WIMA mks4 FKP1 MKP4 WIMA mkp1 MKS4 WIMA wima 220 CAPACITOR
Text: D WIMA DC-LINK HY NEW Metallized Polypropylene PP Capacitors for Hybrid Drives Special Features ˜ Very high volume/capacitance ratio ˜ Self-healing, internal safety disconnector ˜ Safe contact configuration by screwable plates ˜ Dry construction without electrolyte
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2011/65/EC
340x340
490x370
WIMA MKS 3
wima mkxr
MKP-X2
WIMA FKP1 0,22 1250 600
WIMA mks4
FKP1
MKP4
WIMA mkp1
MKS4 WIMA
wima 220 CAPACITOR
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MKP-2
Abstract: FKP1 WIMA fkp 1 FKP1 0.1 WIMA FKP 4 MKP 2
Text: D WIMA DC-LINK HY NEW Metallized Polypropylene PP Capacitors for Hybrid Drives Special Features ˜ Very high volume/capacitance ratio ˜ Self-healing, internal safety disconnector ˜ Safe contact configuration by screwable plates ˜ Dry construction without electrolyte
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2011/65/EU
MKP-2
FKP1
WIMA fkp 1
FKP1 0.1
WIMA FKP 4
MKP 2
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HYE18L256160BC-7
Abstract: No abstract text available
Text: Internet Data Sheet, Rev. 1.72, July 2005 HYB18L256160B[C/F]-7.5 HYE18L256160B[C/F]-7.5 HYE18L256160BCL-7.5 HYE18L256160BFL-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG,
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HYB18L256160B
HYE18L256160B
HYE18L256160BCL-7
HYE18L256160BFL-7
256-Mbit
P-VFBGA-54-2
03292006-JTNB-YF9U
HYE18L256160BC-7
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CFPT-9058
Abstract: CFPT-9055 CFPT-9060 CFPT-9 CFPT-9059 CFPT-9051 CFPT-9058 rakon hy marking code smd cfpt FC 10kw
Text: CFPT-9050 SMD TCVCXO iSSUE 8; 1 NOVEMBER 2008 - RoHS 2002/95/EC Description ▪▪ 0.3ppm TCXO manufactured for us by Rakon utilising their Pluto ASIC technology. Its wide frequency range, operating temperature range and drive capability coupled with high
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CFPT-9050
2002/95/EC
20MHz,
100nF
CFPT-9058
CFPT-9055
CFPT-9060
CFPT-9
CFPT-9059
CFPT-9051
CFPT-9058 rakon
hy marking code smd
cfpt
FC 10kw
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SMD MARKING CODE N1
Abstract: No abstract text available
Text: D a t a S h e e t , V 1 . 4 , A p r i l 2 00 4 HYB18L128160BF-7.5 HYE18L128160BF-7.5 HYB18L128160BC-7.5 HYE18L128160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 128-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04-30
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HYB18L128160BF-7
HYE18L128160BF-7
HYB18L128160BC-7
HYE18L128160BC-7
128-Mbit
P-VFBGA-54-2
SMD MARKING CODE N1
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HYE18L256160BF-7
Abstract: No abstract text available
Text: D a t a S h e e t , V 1 . 4 , A p r i l 2 00 4 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 256-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-04-30
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HYB18L256160BF-7
HYE18L256160BF-7
HYB18L256160BC-7
HYE18L256160BC-7
256-Mbit
P-VFBGA-54-2
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Untitled
Abstract: No abstract text available
Text: D a t a S he et , V 1. 41 , J un e 2 00 4 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 D R A M s fo r M o b i l e A p p l i c a ti o n s 256-Mbit Mobile-RAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-06-23
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HYB18L256160BF-7
HYE18L256160BF-7
HYB18L256160BC-7
HYE18L256160BC-7
256-Mbit
P-VFBGA-54-2
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smd transistor HY
Abstract: HYE18L256160BF-7
Text: Data Sheet, V1.42, Sept. 2004 HYB18L256160BF-7.5 HYE18L256160BF-7.5 HYB18L256160BC-7.5 HYE18L256160BC-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-09-10 Published by Infineon Technologies AG,
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HYB18L256160BF-7
HYE18L256160BF-7
HYB18L256160BC-7
HYE18L256160BC-7
256-Mbit
P-VFBGA-54-2
smd transistor HY
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A114 es
Abstract: Golden DRAGON Argus osram golden dragon automotive diode smd marking jy transistor smd marking HY BAR GRAPH marking code HY SMD Transistor OSRAM automotive lamp transistor smd marking BA RE smd transistor HY
Text: Golden DRAGON ARGUS® Enhanced Thinfilm LED Lead Pb Free Product - RoHS Compliant LR W5KM, LY W5KM Released Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss mit ARGUS® Optik • Besonderheit des Bauteils: Lichtquelle mit
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24-mm
200/Rolle,
A114 es
Golden DRAGON Argus
osram golden dragon automotive
diode smd marking jy
transistor smd marking HY
BAR GRAPH
marking code HY SMD Transistor
OSRAM automotive lamp
transistor smd marking BA RE
smd transistor HY
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Untitled
Abstract: No abstract text available
Text: Golden DRAGON ARGUS® Enhanced Thinfilm LED Lead Pb Free Product - RoHS Compliant LR W5KM, LY W5KM Abkündigung nach OS-PD-2010-003 Obsolete acc. to OS-PD-2010-003 Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss mit ARGUS® Optik
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OS-PD-2010-003
OS-PD-2010-003
D-93049
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TIONA 595
Abstract: Golden DRAGON Argus VAP1 marking code jy O SMD
Text: Golden DRAGON ARGUS® Enhanced Thinfilm LED Lead Pb Free Product - RoHS Compliant LR W5KM, LY W5KM Nicht für Neuentwicklungen / Not for New Designs Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss mit ARGUS® Optik
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HYE18L256160BF-7
Abstract: HYE18L256160BFL-7.5 HYB18L256160B HYB18L256160BF P-VFBGA 49 package
Text: Data Sheet, Rev. 1.72, July 2005 HYB18L256160B[C/F]-7.5 HYE18L256160B[C/F]-7.5 HYE18L256160BCL-7.5 HYE18L256160BFL-7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-07 Published by Infineon Technologies AG,
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HYB18L256160B
HYE18L256160B
HYE18L256160BCL-7
HYE18L256160BFL-7
256-Mbit
P-VFBGA-54-2
01302004-CZ2R-J9SE
HYE18L256160BF-7
HYE18L256160BFL-7.5
HYB18L256160BF
P-VFBGA 49 package
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marking code 1BL Diode
Abstract: diode SMD MARKING CODE K6 Zener diode smd marking h5 Zener diode smd marking k9 smd marking KD smd zener diode KB stk413 430 diode marking 1BL 6b2l 1BL diode
Text: PZUxBL series Single Zener diodes Rev. 01 — 6 May 2008 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in SOD882 leadless ultra small Surface-Mounted Device SMD plastic package. 1.2 Features • Non-repetitive peak reverse power
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OD882
AEC-Q101
marking code 1BL Diode
diode SMD MARKING CODE K6
Zener diode smd marking h5
Zener diode smd marking k9
smd marking KD
smd zener diode KB
stk413 430
diode marking 1BL
6b2l
1BL diode
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diode cc 3053
Abstract: cc 3053 NTC THERMISTORS nd06 NI24RA0104 THERMISTORS SCK 055 ntc 150-7 10 k ntc thermistor 4 PC smd DA RN smd code nj
Text: A KYOCERA GROUP COMPANY TPC NTC Thermistors - Preliminary Catalog NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They
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Untitled
Abstract: No abstract text available
Text: 1-A D ual-H B D Dual-Half-Bridge Driver TLE 4207 Overview Features • Delivers up to 0.8 A continuous • Optimized for DC motor management applications • Very low current consumption in stand-by (Inhibit) mode • Low saturation voltage; typ.1.2 V total @ 25 °C; 0.4 A
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OCR Scan
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067006-A9275
P-DSO-14-8
P-DSO-20-6
Des93
H-0-10
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Untitled
Abstract: No abstract text available
Text: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; • Lower output saturation voltage Is < 1 mA • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier
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OCR Scan
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6235bÃ
P-DSO-14-1,
P-DS0-14-4
35x45Â
Q254WIBi
S35bG5
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siemens 30 090
Abstract: Q67006-A9275 TLE 4207 G
Text: S IE M E N S 1 -A D u a l-H B D D u a l-H a lf-B rid g e Driver TLE 4207 Overview Features Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode Low saturation voltage; ty p .l .2 V total @ 25 °C; 0.4 A
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OCR Scan
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Q67006-A9275
P-DSO-14-4
P-DSO-20-6
fl53SbOS
0103SL
P-DSO-20-6
35x45"
siemens 30 090
TLE 4207 G
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1C for Inductive Proximity Switches with Short-Circuit Protection TCA 505 BG Preliminary Data Bipolar IC Features • Wide supply voltage of 3.1 to 4.5 V and 4 to 40 V • Low current consumption of less than 0.8 mA • Integrated output stage for up to 60 mA
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OCR Scan
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Q67000-A8341
P-DSO-16-1
Q67000-A83---------------
023SbDS
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siemens servo motor
Abstract: marking 4206
Text: SIEMENS 1-A DC Motor Driver for Servo Driver Applications TLE 4206 Overview Features Optimized for headlight beam control applications Current-peak-blanking no electrolytic capacitor at Vs Delivers up to 0.8 A continuous Low saturation voltage; typ.1.2 V total @ 25 °C; 0.4 A
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OCR Scan
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Q67000-A9303
Q67006-A8299
P-DIP-16-5
P-DSQ-14-4
P-DSO-14-4
P-DIP-16-5
25max
GPD05585
siemens servo motor
marking 4206
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4207
Abstract: No abstract text available
Text: SIEMENS 1 -A D u a l-H B D D u a l-H a lf-B rid g e Driver T L E 4207 Overview Features • Delivers up to 0.8 A continuous • Optimized for DC motor management applications • Very low current consumption in stand-by (Inhibit) mode • Low saturation voltage; typ. 1.2 V total @ 25 °C; 0.4 A
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OCR Scan
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P-DSO-14-4
P-DSO-20-6
Q67006-A9275
P-DSO-14-4
35x45'
4207
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Untitled
Abstract: No abstract text available
Text: HY B39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns Automatic Command and Read with
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B39S64400/800/160BT
64MBit
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BA0A11
Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9
Text: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8
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HYB39S6440X/8
X/16xT
64MBit
P-TSOPII-54
400mil
B39S6440X/80X/16xT
PII-54
400mil,
TSOPN-54
BA0A11
39S64800T-80
39S648Q0T-10
SMD MARKING CODE aO9
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