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    HY51V18164B

    Abstract: hy51v18 HY51V16164B
    Text: HY51V18164B,HY51V16164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY51V18164B HY51V16164B 1Mx16, 16-bit 1Mx16 hy51v18 HY51V16164B PDF

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    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


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    1Mx16, 16-bit 1Mx16 PDF

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    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


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    HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15) PDF

    HY51V18164B

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques


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    HY51V18164B 16-bit 16-bit. 04711-20Cf) 1AD60-10-MAY95 HY51V18164BJC PDF

    HY51V18164B

    Abstract: No abstract text available
    Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


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    16-bit HY51V18164B 16-bit. 470C11 10X168} 4b750Ã 1AD60-10-MAY95 PDF

    HY51V18164B

    Abstract: HY51V18164
    Text: • 'H Y U N D A I HY51V18164B, HY51V16164B 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


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    HY51V18164B, HY51V16164B 16bit HY51V18164BJC HY51V18164BSLJC HY51V18164BTC HY51V18164BSLTC HY51V16164BJC HY51V16164BSLJC HY51V16164BTC HY51V18164B HY51V18164 PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260 PDF

    HY5118164BJC

    Abstract: HYM5V72A404 HY514404BJ HY5117404A
    Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR


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    HYM564124AR/ATR HYM572A124AR/ATR HYM564224AR/ATR HYM564214AF/ATF HY5118164BJC/BTC HY514404BJ/BT HY5117804BJ/BT HY5118164BJC HYM5V72A404 HY514404BJ HY5117404A PDF