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    HY53C464L Search Results

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    HY53C464L Price and Stock

    SK Hynix Inc HY53C464LS-80

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    Bristol Electronics HY53C464LS-80 185
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    HY53C464LS-80 19
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    Quest Components HY53C464LS-80 4,210
    • 1 $7.5
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    HY53C464LS-80 171
    • 1 $7.5
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    HY53C464LS-80 148
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    HY53C464LS-80 15
    • 1 $7.5
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    HY53C464LS-80 12
    • 1 $7.5
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    HY53C464LS-80 2
    • 1 $7.5
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    SK Hynix Inc HY53C464LS-10

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    Bristol Electronics HY53C464LS-10 161
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    HY53C464LS-10 17
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    Component Electronics, Inc HY53C464LS-10 1
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    . HY53C464LS-80

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    Bristol Electronics HY53C464LS-80 19
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    hyn HY53C464LS80

    64K X 4 FAST PAGE DRAM Fast Page DRAM, 64KX4, 80ns, CMOS, PDIP18
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    ComSIT USA HY53C464LS80 43
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    KOREA HY53C464LS80

    INSTOCK
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    Chip 1 Exchange HY53C464LS80 49
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    HY53C464L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY53C464L-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY53C464L-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY53C464L-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY53C464L-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    HY53C464L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY53C464

    Abstract: HY53C464-70 536X4 65536x4
    Text: SIE D HYUNDAI ELECTRONICS • 4b7SOññ 0000SL3 32T « H Y N K MYUNDA HY53C464 SEMICONDUCTOI MK 4 liii M O* | U \ \ 1 M 121202 B-JAN 92 . FEATURES DESCRIPTION • Low power dissipation for HY53C464L — Operating Current, 100ns : 50mA (max.) — TTL Standby C u rren t: 2mA (max.)


    OCR Scan     		G000Sb3 M121202B-JAN92 HY53C464 536X4 HY53C464L) HY53G464 PACKAGE-300 T-46-23-17 HY53C464-70 65536x4 PDF

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J PDF

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS PDF

    HY53C464LS

    Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
    Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		HY53C464 330mil 18pin CMO442) 335ie P-021 A02-20-MA HY53C464LS HY53C464F hy53c464lf HY53C464LF70 HY53C464S An-313 PDF

    HY53C464LS

    Abstract: HY53C464 HY53C464S hy53c464lf HY53C464LF70
    Text: •HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		HY53C464 330mil 18pin 1AA02-20-APR93 300BSC HY53C464LS HY53C464S hy53c464lf HY53C464LF70 PDF

    hy53c464ls

    Abstract: A211D HY53C464LF70 hy53c464 hvof
    Text: HY53C464 Series “H Y U N D A I 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		HY53C464 330mil 18pin 335f8 1AA02-20-MAY94 HY53C464S hy53c464ls A211D HY53C464LF70 hvof PDF

    LH2464-10

    Abstract: HY53C464-10 LH2464-12 M5M4464P-12 41464 21464-12 HY53C464-12 HY53C464-70 lh2464 50464cp
    Text: 193 - 2 5 6 K SL £ tt « fa« ® oc> X A nMOS Dynamic • ■ / + > ? Wr TRAC ■ax ns TRCY ■in (ns) TCAD min (ns) TAH min (ns) TP nin (ns) RAM (6 5 5 3 6 X 4 ) ft WCY ■in (ns) * TDH nin (ns) TRWC lin (ns) V D D or V C C (V) IDD max (■A) 18PIN K


    OCR Scan     		18PIN GM71C464-10 M5M4464AP/AJ/AL-12 M5M4464AP/AJ/AL-15 M5M4464AP/AJ/AL-8 M5M4464P-12 M5M4464P-15 H5M4464 LH2464-10 HY53C464-10 LH2464-12 41464 21464-12 HY53C464-12 HY53C464-70 lh2464 50464cp PDF

    HY53C464LS

    Abstract: LASCR HY53C464S HY53C464 MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70
    Text: HY53C464 Series »HYUNDAI 64K X 4-bit CMOS DRAM DESCRIPTION The HY53C464 is feist dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		HY53C464 330mil 18pin 1AA02-20-MAY94 4b750flà HY53C464S HY53C464LS LASCR MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70 PDF

    HY53C464-70

    Abstract: No abstract text available
    Text: „v Hyundai < * HY53C464 S EM IC O N D U C TO R 1 1 M 1 2 1 2 0 1 A -A P R 9 1 DESCRIPTION FEATURES The HY53C464 is a high speed 65,536X4 bit CM OS dynamic random access memory. Fabricated with HYUNDAI CM OS techno­ logy, the HY53C464 offers a fast page mode


    OCR Scan     		HY53C464 HY53C464 536X4 HY53C464L) HY53C464-70 PDF