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HY57V164010C-10 Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of	Original	PDF	HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
hy57v164010c Abstract: No abstract text available Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of	Original	PDF	HY57V164010C HY57V164010C 216-bits 152x4. 400mil 44pin
X2M ST Abstract: No abstract text available Text: »«Y UND ft! - • H Y57V164010C 2 Banks x Z M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of	OCR Scan	PDF	Y57V164010C HY57V164010C 216-bits 152x4. 400mil 44pin 1SD30-U-MA298 X2M ST
Untitled Abstract: No abstract text available Text: - H Y U N D A I ♦ HYM7V75AR400C N-SERIES > Registered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75AR400C is a high speed 3.3Volt Synchronous Dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in TSO PII and one 8-pin T S S O P 2K bit EEPRO M on a 168-pin glass-epoxy	OCR Scan	PDF	HYM7V75AR400C 4Mx72 168-pin hig66MHz 50MHz HYM7V75AR40GC 111run