hy57v16
Abstract: HY57V164010D-10
Text: HY57V164010D 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
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HY57V164010D
HY57V164010D
216-bits
152x4.
400mil
44pin
hy57v16
HY57V164010D-10
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HY57V164010
Abstract: No abstract text available
Text: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
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164010D
HY57V164010D
216-bits
152x4.
400mil
44pin
40-10-M
HY57V164010
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