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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HY57V56420AT 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	PDF	HY57V56420AT HY57V56420A 456bit 216x4. 400mil 54pin
Untitled Abstract: No abstract text available Text: HY57V56420AT 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	PDF	HY57V56420AT HY57V56420A 456bit 216x4. 400mil 54pin
Untitled Abstract: No abstract text available Text: HY57V56420A L T 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	PDF	HY57V56420A 456bit 216x4. 400mil 54pin
HY57V56420A Abstract: No abstract text available Text: HY57V56420A 4 Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	Original	PDF	HY57V56420A HY57V56420A 456bit 216x4. 400mil 54pin
1gb pc133 SDRAM DIMM 144pin Abstract: 54-PIN PC100 gm72v66841 Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh	OCR Scan	PDF	200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841
Untitled Abstract: No abstract text available Text: HY57V56420A L T 64Mx4-bit, 8K Ref., 4Banks, 3.3V DESCRIPTION The HY57V56420A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420A is organized as 4banks of 16,777,216x4.	OCR Scan	PDF	HY57V56420A 64Mx4-bit, 456bit 216x4. 400mil 54pin
PC100 Abstract: PC133 54-PIN HYM71V653201 Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH	OCR Scan	PDF	200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201