HY628400LP
Abstract: No abstract text available
Text: HY628400-I Series 'H Y U N D A I 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512KX
4b75GÃ
1DE02-11-MÃ
HY628400LP-I
HY628400LLP-I
HY628400LP
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI HY628400-I Series _ 512Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512Kx
1DE02-11-MAY94
4b750flfl
D003fll2
HY628400LP-I
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HY628400LLG-I
Abstract: DV06 138-884
Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512Kx
1DE02-11-MAY95
HY628400LP-I
HY628400LLP-I
HY628400LG-I
HY628400LLG-I
DV06
138-884
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33A1S
Abstract: HY628400LG-I
Text: HY628400-I Series •HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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PDF
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HY628400-I
512KX
1DE02-11-MAY95
HY628400LP-I
HY628400LLP-I
HY628400LG-I
33A1S
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HY628400
Abstract: HY628400LP
Text: » H Y U N D A I H Y 6 2 8 4 0 0 va I w n w i l i S e r ie s 512Kx8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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512Kx8-bit
HY628400
FEATURES01-11-MAY94
4b75GÃ
HY628400P
HY628400LP
HY628400LLP
HY628400LP
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HY628400LLT1
Abstract: LA4500 628-400 628400 HY628400LP
Text: HY 628400- i • H Y U N D A I Series 512Kx8bit C M O S SRAM DESCRIPTION FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min) data retention Standard pin configuration
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512Kx8bit
HY628400/HY628400-I
HY628400/
HY628400-I
32pin
400mil
HY628400LLT1
LA4500
628-400
628400
HY628400LP
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HY628400LLG
Abstract: HY628400LG-I HY628400LLP 8K*8 sram 52-PIN
Text: •HYU N DAI QUICK REFERENCE SRAM ORGANIZATION 64K bit 8Kx8 256K bit (32Kx8) 6 PART NUMBER SPEED(ns) FEATURES HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120
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HY6264AP
HY6264ALP
HY6264ALLP
HY6264AJ
HY6264ALJ
HY6264ALLJ
HY6264ALP-I
HY6264ALLP-I
HY6264ALJ-I
HY6264ALLJ-I
HY628400LLG
HY628400LG-I
HY628400LLP
8K*8 sram
52-PIN
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A17a
Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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PDF
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HY628400
512KX
288x8-bits
speed-55/70/85/100ns
1DE01
-11-MAY95
A17a
HY628400LLG55
HY628400LLG
6da6
HY628400LG
A18A
tsop 338 IR
1A13
DA16
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HY628400LG-I
Abstract: HY62U16100LLR2-I HY62U256
Text: QUICK REFERENCE GUIDE •HYUNDAI SRAM QUICK REFERENCE Org. 64K bit 8Kx 8 256K bit (32Kx 8) PART NUMBER HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ HY6264ALP-I HY6264ALLP-I HY6264ALJ-I HY6264ALLJ-I HY62256AP HY62256ALP HY62256ALLP HY62256AJ
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HY6264AP
HY6264ALP
HY6264ALLP
HY6264AJ
HY6264ALJ
HY6264ALLJ
HY6264ALP-I
HY6264ALLP-I
HY6264ALJ-I
HY6264ALLJ-I
HY628400LG-I
HY62U16100LLR2-I
HY62U256
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HY628400LP
Abstract: A13OE L03C DY02
Text: HY628400 Series "HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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HY628400
288x8-bits
speed-55/70/85/100ns
1DE01
-11-MAY95
HY628400P
HY628400LP
A13OE
L03C
DY02
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5DOF
Abstract: A12U HY628400 HAB 20-S
Text: HY628400 Series » H Y U N D A I 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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OCR Scan
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PDF
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HY628400
512Kx
288x8-bits
speed-55/70/85/100ns
00b353
1DE01
-11-MAY95
5DOF
A12U
HAB 20-S
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