Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
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HY62QF16201A
128Kx16bit
LL/SL-pa6201A
HYQF621Ac
100ns
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PDF
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SM-1994
Abstract: No abstract text available
Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The
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Original
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HY62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
128Kx16bit
HY62UF16200
HY62QF16200
HY62EF16200
16bits.
SM-1994
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PDF
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2048x2048
Abstract: No abstract text available
Text: HY62UF8400/ HY62QF8400/ HY62EF8400/ HY62SF8400 Series 512Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as 524,288 words by 8 bits. The HY62UF8400 /
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Original
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HY62UF8400/
HY62QF8400/
HY62EF8400/
HY62SF8400
512Kx8bit
HY62UF8400
HY62QF8400
HY62EF8400
2048x2048
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
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Original
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HY62QF16406D
256Kx16bit
16bits.
HYQF6406D
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16404C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Jul.06.2000 Preliminary 01 Part No Change 100ns Part Delete Oct.30.2000
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HY62QF16404C
256Kx16bit
100ns
HYQF6404C
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary
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Original
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HY62QF16804A
512Kx16bit
HY62QF16803A
HY62QF16804A
HYQF6804A
09/Apr.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF8100C Series 128Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF8100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 131,072 words by 8bit. The HY62QF8100C uses high performance full CMOS process technology and designed for high speed low power circuit
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Original
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HY62QF8100C
128Kx8bit
5M-1994.
32pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16403A uses high performance full CMOS process technology and is designed for high speed and low power
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Original
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HY62QF16403A
256Kx16bit
16bits.
48-ball
48ball
5M-1994.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100 uses high performance full CMOS process technology and designed for high speed low power circuit
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Original
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HY62QF16100
64Kx16bit
16bit.
85/ON
48ball
5M-1994.
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PDF
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SM-1994
Abstract: A2000V
Text: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The
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Original
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HY62UF16100/
HY62QF16100/
HY62EF16100/
HY62SF16100
64Kx16bit
HY62UF16100
HY62QF16100
HY62EF16100
16bit.
SM-1994
A2000V
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
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Original
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HY62UF16400A/
HY62QF16400A/
HY62EF16400A/
HY62SF16400A
256Kx16bit
HY62UF16400A
HY62QF16400A
HY62EF16400A
16bits.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
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Original
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HY62QF16101C
64Kx16bit
F16101C
HYQF611Cc
100ns
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62UF8200A/ HY62QF8200A/ HY62EF8200A/ HY62SF8200A Series 256Kx8bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention
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HY62UF8200A/
HY62QF8200A/
HY62EF8200A/
HY62SF8200A
256Kx8bit
48ball
HY62UF8200A
HY62QF8200A
HY62EF8200A
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PDF
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HY62QF16200A
Abstract: No abstract text available
Text: HY62UF16200A/ HY62QF16200A/ HY62EF16200A/ HY62SF16200A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200A / HY62QF16200A / HY62EF16200A / HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The
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HY62UF16200A/
HY62QF16200A/
HY62EF16200A/
HY62SF16200A
128Kx16bit
HY62UF16200A
HY62QF16200A
HY62EF16200A
16bits.
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PDF
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BU 3150
Abstract: No abstract text available
Text: HY62UF8400A/ HY62QF8400A/ HY62SF8400A/ Series 512Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.2V(min) data retention • Standard pin configuration
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HY62UF8400A/
HY62QF8400A/
HY62SF8400A/
512Kx8bit
48ball
HY62UF8400A
HY62QF8400A
HY62EF8400A
HY62SF8400A
HY62UF8400A
BU 3150
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100C uses high performance full CMOS process technology
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Original
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HY62QF16100C
64Kx16bit
16bit.
HY62QCKAGE
48ball
SM-1994.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62QF16803A 512Kx16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62QF16803A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62QF16803A uses high performance full CMOS process technology and is designed for high speed and
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Original
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HY62QF16803A
512Kx16bit
HY62QF16803A
16bits.
HY62QF16803A-
48ball
5M-1994.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention
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Original
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HY62UF16400/
HY62QF16400/
HY62EF16400/
HY62SF16400
256Kx16bit
HY62UF16400
HY62QF16400
HY62EF16400
16bits.
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PDF
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hy62uf8100
Abstract: HY62UF8100-I buffer cmos 1.8V HY62UF8100/
Text: HY62UF8100/ HY62QF8100/ HY62EF8100/ HY62SF8100 Series 128Kx8bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF8100 / HY62QF8100 / HY62EF8100 / HY62SF8100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 131,072 words by 8bit. The HY62UF8100 /
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Original
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HY62UF8100/
HY62QF8100/
HY62EF8100/
HY62SF8100
128Kx8bit
HY62UF8100
HY62QF8100
HY62EF8100
HY62UF8100-I
buffer cmos 1.8V
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PDF
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Untitled
Abstract: No abstract text available
Text: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
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Original
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HY62UF16401A/
HY62QF16401A/
HY62EF16401A/
HY62SF16401A
256Kx16bit
HY62UF16401A
HY62QF16401A
HY62EF16401A
16bits.
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PDF
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DEC-97
Abstract: No abstract text available
Text: • ■Vil MRÊk 1H Y 6 2 U F 8 1 /H Y 6 2 Q F 8 1 /H Y 6 2 E F 8 1 / ili ¥li W li ü I H Y 6 2 S F 8 1 0S e rie si28K x 8b itfu iic m o ss ra m PRELIMINARY DESCRIPTION FEATURES The HY62UF8100 / HY62QF8100 / HY62EF8100 / HY62SF8100 is a high speed, super low power
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OCR Scan
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HY62UF8100
HY62QF8100
HY62EF8100
HY62SF8100
SM-1994
DEC-97
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 6 2Q F 164 04 C S eries 256K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16404C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16404C uses high performance full CMOS process technology and is designed for high speed and low power
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OCR Scan
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16bit
HY62QF16404C
16bits.
48-ball
x16bit
HYQF6404C
|
PDF
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Untitled
Abstract: No abstract text available
Text: •Ä J V I I i D Ü I •■ ■ U n l l n I HY62UF8400/ HY62QF8400/ HY62EF840Q/ HY62SF8400 Series 5i2Kx8bitfuii c m o s s r a m PRELIMINARY DESCRIPTION FEATURES The HY62UF8400 / HY62QF8400 / HY62EF8400 / HY62SF8400 is a high speed and super low power 4Mbit full CMOS SRAM organized as
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OCR Scan
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HY62UF8400/
HY62QF8400/
HY62EF840Q/
HY62SF8400
48ball
HY62UF8400
HY62QF8400
HY62EF8400
|
PDF
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Untitled
Abstract: No abstract text available
Text: » V H A lV Iit I IH W I I 11 I I « I l HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kxi6bit full c m o s s r a m PRELIMINARY DESCRIPTION FEATURES The HY62UF16400 / HY62QF16400 / HY62EF16400 / HY62SF16400 is a high speed, super low power and 4Mbit full CMOS SRAM
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OCR Scan
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HY62UF16400/
HY62QF16400/
HY62EF16400/
HY62SF16400
256Kxi6bit
48ball
HY62UF16400
HY62QF16400
HY62EF16400
|
PDF
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