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    HY62UF16201A-I

    Abstract: HY62UF16201A
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


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    PDF HY62UF16201A 128Kx16bit HYUF621Ac 100ns HY62UF16201A-I

    HY62UF16201A

    Abstract: HY62UF16201A-I HY62UF16201AF HYUF621 REV08
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 07 08 History Draft Date Remark Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW


    Original
    PDF HY62UF16201A 128Kx16bit HY62UF16201AF1) HY62UF16201AF) HYUF621Ac 100ns HY62UF16201A-I HY62UF16201AF HYUF621 REV08

    kor 2001

    Abstract: MARKING HYNIX Origin Country HYNIX Origin Country
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 07 History Draft Date Remark Divide output load into two factors Dec.10. 2000 Final - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW


    Original
    PDF HY62UF16201A 128Kx16bit HY62UF16201AF1) HY62UF16201AF) HYUF621Ac 100ns kor 2001 MARKING HYNIX Origin Country HYNIX Origin Country

    HYUF621

    Abstract: No abstract text available
    Text: H Y 6 2U F 1 620 1A S eries 128K X 16 b it fu ll CMOS SRAM DESCRIPTION FEATURES The HY62UF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16201A uses high performance full CMOS process technology and is designed for high speed and


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    PDF HY62UF16201A 16bits. 48-FBGA 16bit HYUF621AC 100ns HYUF621