transistor BD 512
Abstract: IB1012S1100
Text: Part Number: Integra IB1012S1100 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S1100 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at
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IB1012S1100
IB1012S1100
IB1012S1100-REV-NC-DS-REV-A
transistor BD 512
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Abstract: No abstract text available
Text: Part Number: Integra IB1012S20 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S20 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating
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IB1012S20
IB1012S20
IB1012S20-REV-NC-DS-REV-NC
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Abstract: No abstract text available
Text: Part Number: Integra IB1012S10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S10 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating
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IB1012S10
IB1012S10
IB1012S10-REV-NC-DS-REV-B
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Abstract: No abstract text available
Text: Part Number: Integra IB1012S500 TECHNOLOGIES, INC. L-Band TACAN Transistor Silicon Bipolar − Ultra-high fT The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 MHz. While operating in class C mode under DME pulsing
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IB1012S500
IB1012S500
IB1012S500-REV-NC-DS-REV-NC
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Abstract: No abstract text available
Text: Part Number: Integra IB1012S50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S50 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating
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IB1012S50
IB1012S50
IB1012S50-REV-NC-DS-REV-A
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Abstract: No abstract text available
Text: Part Number: Integra IB1012S150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor The high power pulsed avionics transistor part number IB1012S150 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating in class C mode under DME pulse conditions at
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IB1012S150
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IB1012S150-REV-NC-DS-REV-NC
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Abstract: No abstract text available
Text: Part Number: Integra IB1012S800 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 MHz.
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IB1012S800
IB1012S800
IB1012S800-REV-PR1-DS-REV-NC
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filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率
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RF20105
67SiGe
JESD204A-DACADC
JESD204A-
AEC100
BFR90
BFQ33
TFF1004HN
JESD204A
BLF578)
filter for GPS spice
BLF578
diode smd marking BUF GP 750
BLF7G10-300p
AX 2008 lqfp48
GP 809 DIODE
BF1118
MPAL2731M15
bgu7051
BB 505 Varicap Diode
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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sot-89 BV SMD TRANSISTOR MARKING CODE
Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ
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NXPRF14
JESD204A
AEC100
RFBFR90
RFBFQ33
TFF1004HN
FMF11070HN
sot-89 BV SMD TRANSISTOR MARKING CODE
bgu7051
MS1051
2SK163
BLF578 fm band
BLF278 mosfet HF applications
BFU610F
TAN250A
PTFA 210301E - 30 W
100MHz SMD RF Mixer
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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