IBM0144051M
Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405B 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max
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IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014405
IBM014405B
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din 4232
Abstract: IBM014405P1M IBM0144051M IBM014405B1M IBM014405M1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405M IBM014405B IBM014405P 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization
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IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014405
IBM014405M
IBM014405B
IBM014405P
din 4232
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IBM0144001M
Abstract: IBM014400B1M IBM014400M1M IBM014400P1M
Text: IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V. IBM014400 IBM014400M IBM014400B IBM014400P 1M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation
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IBM0144001M
IBM014400P1M
IBM014400M1M
IBM014400B1M
IBM014400
IBM014400M
IBM014400B
IBM014400P
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fast page mode dram controller
Abstract: IBM0144001M IBM014400B1M IBM014400M1M IBM014400P1M
Text: IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V. IBM014400 IBM014400M IBM014400B IBM014400P 1M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation
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IBM0144001M
IBM014400P1M
IBM014400M1M
IBM014400B1M
IBM014400
IBM014400M
IBM014400B
IBM014400P
fast page mode dram controller
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IBM0144401M
Abstract: IBM014440M1M IBM014440P1M
Text: IBM0144401M x 410/10, 5.0V, QUAD CAS. IBM014440P1M x 410/10, 3.3V, QUAD CAS, LP, SR. IBM014440M1M x 410/10, 5.0V, QUAD CAS, LP, SR. IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation
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IBM0144401M
IBM014440P1M
IBM014440M1M
IBM014440
IBM014440M
IBM014440P
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IBM0144401M
Abstract: IBM014440M1M IBM014440P1M
Text: IBM0144401M x 410/10, 5.0V, QUAD CAS. IBM014440P1M x 410/10, 3.3V, QUAD CAS, LP, SR. IBM014440M1M x 410/10, 5.0V, QUAD CAS, LP, SR. IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation
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IBM0144401M
IBM014440P1M
IBM014440M1M
IBM014440
IBM014440M
IBM014440P
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IBM0144051M
Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014445 IBM014445B 1M x 4 10/10 QUAD CAS EDO DRAM Features • Standard Power • Low Power Dissipation
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IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014445
IBM014445B
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IBM0144051M
Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. Preliminary IBM014445 IBM014445M IBM014445B IBM014445P 1M x 4 10/10 QUAD CAS EDO DRAM Features • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V
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IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014445
IBM014445M
IBM014445B
IBM014445P
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Con 39D
Abstract: No abstract text available
Text: IBM 0 1 1 6 1 8 0 M IBM 0 1 1 6 1 8 0 P Advance 1M x 18 Low Power DRAM Features • 1,048,576 word by 18 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • 4096 refresh cycles/256ms • High Performance: -50 • Low Power Dissipation
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cycles/256ms
200nA
IBM0116180M
IBM0116180P
IBM011G180P
SO/44
Con 39D
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0118160B
Abstract: 0116165B 014400B 0117805 014400
Text: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343
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IBM0116160M
0116160P.
0116165B.
0116165M
0118160B
0116165B
014400B
0117805
014400
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014400B
Abstract: No abstract text available
Text: IBM 014400B IBM 014400 IBM 014400C IB M 014400A 1M x 4 D R A M Features • 1 ,0 4 8 ,5 7 6 word by 4 bit organization • P ow er Supply: 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V • 1 0 2 4 refresh c y d e s /1 6 m s • High P erform ance: • - Active m ax
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014400B
014400C
14400A
110ns
130ns
4DSU-00
350mil;
06H0059
MMDD34DSU-00
300mil;
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Untitled
Abstract: No abstract text available
Text: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S
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11D1475B
11E1475B
IBM11D2475B
IBM11E2475B
72-Pin
IBM11D1475B
QG03fl2Q
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PDF
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Untitled
Abstract: No abstract text available
Text: IWKIC MX83C1 BEE IBM-Bit Mask ROM MB/3BBit Output FEATURES ORDER INFORMATION • Bit organization 1M x 16 word mode) 512K x 32 (double word mode) Part No. • Fast access time Random access: 100ns (max.) MX23C1622MC-10 • Page • Current 8 double words per page
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MX83C1
100ns
MX23C1622MC-10
100mA
50jiA
A0-A18
D0-D30
D31/A-1
23C1622-10
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a8303
Abstract: No abstract text available
Text: IBM 0 1 1 6 1 6 0 M IBM 0 1 1 6 1 6 0 P 1M x 16 Low Power DRAM Features • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • 4 0 9 6 refresh cy cles/256m s • High P erform ance: Low P ow er Dissipation
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cles/256m
DSU-00
43G9618
MMDD35DSU-00
a8303
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PDF
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442250
Abstract: No abstract text available
Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1 ,0 4 8 ,5 7 6 w o rd by 16 bit o rg a n iz a tio n • • S in g le 3 .3 V + 0 .3 V or 5 .0 V + 0 .5 V p o w e r s u p p ly . .n ^ S ta n d a rd P o w e r S P a n d L o w P o w e r (LP )
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IBM0116165
IBM0116165M
IBM0116165B
IBM0116165P
SA14-4225-06
442250
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PDF
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1314E
Abstract: No abstract text available
Text: IB M 1 1 N 1 6 4 5 L IB M 1 1 N 1 7 3 5 Q 1 M x 6 4 /7 2 D R A M M o d u le Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1Mx72 Extended Data Out Page Mode
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1Mx72
SA14-4630-05
1314E
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014400m
Abstract: No abstract text available
Text: IBM014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max)
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IBM014400M
IBM014400P
Rate/128m
110ns
130ns
J-26/20
300mil)
014400M
014400P
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PDF
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DM 4203
Abstract: ns 4203
Text: s z JO I. 0 ß E d 9 6 /2 1- pssjAay f0 "£ I-VS SOSt'HOS ;u0 ujnoop s|L|; jo pu0 0 4 ; ;e suoiswoja 0 4 ; o; poiqns j 0 i|ijn|. s| 0 sn P0/U0S0J sm&j uv uo^EJodjoQ iMai S 3 1- VZY U7 Ot? 991 *8 S6 H. n n iin n n n n n n ^ O t?6 H S8 I- (>|OBg ( lu o jj)
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90UELUJ0jJ9d
d-891.
DM 4203
ns 4203
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PDF
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ns 4203
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 0 L § € = ¥ ! ^ = -= 7 = 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 Wc i RAS Access Time 60ns 70ns tcAC i CAS Access Time 20ns 25ns
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1Mx64
130ns
ns 4203
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 B 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60
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1Mx64
75H3412
SA14-4619-01
IBM11M1645B
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)
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IBM0116160
IBM0116160M
IBM0116160B
IBM0116160P
200nA
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features 1,048,576 word by 16 bit organization Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply Standard Power SP and Low Power (LP) 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)
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IBM0116165
IBM0116165M
IBM0116165B
IBM0116165P
350ns
350ns)
28H4723
SA14-4225-03
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PDF
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Untitled
Abstract: No abstract text available
Text: = =— ~ s z ~ - -Z _=-Z T IB M 1 1 T 1 6 4 0 L P 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance:
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Vss/18Vcc
110ns
130ns
T00bl4b
IBM11T1640LP
50H8015
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M1730B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Wc RAS Access Time 60ns 70ns tcAC CAS Access Time 20ns 25ns w Access Time From Address 35ns 40ns tRC
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IBM11M1730B
1Mx72
110ns
130ns
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