ms-024
Abstract: IBM0165165B4M IBM0165165P4M
Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM ADVANCED Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165165B4M
IBM0165165P4M
IBM0165165B
IBM0165165P
104ns
SA14-4239-02
ms-024
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IBM0165165B
Abstract: IBM0165165P4M IBM0165165B4M 88H2011
Text: Discontinued 8/98 - last order; 12/98 last ship IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write
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IBM0165165B4M
IBM0165165P4M
IBM0165165B
IBM0165165P
104ns
20nnformation
IBM0165165B
88H2011
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IBM0165165P4M
Abstract: TSOP-54 IBM0165165B4M 500MIL
Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165165B4M
IBM0165165P4M
IBM0165165B
IBM0165165P
104ns
TSOP-54
500MIL
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IBM0165165B4M
Abstract: IBM0165165P4M TSOP-54
Text: IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply • Performance:
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IBM0165165B4M
IBM0165165P4M
IBM0165165B
IBM0165165P
104ns
TSOP-54
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64mb edo dram simm
Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s
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2m x 32 SRAM SIMM
Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
Text: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P
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IBM0116160
IBM0116160B
IBM0116160M
IBM0116160P
IBM0116165
IBM0116165B
IBM0116165M
IBM0116165P
IBM0116400
IBM0116400B
2m x 32 SRAM SIMM
IBM11M4735CB
SIMM 72
IBM0116400M
IBM038329P
IBM025161L
dimm 168
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Untitled
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M X 16 12/10 EDO DRAM Features 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write Single 3.3 ± 0.3V power supply Performance: Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time RAS only Refresh
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IBM0165165B
IBM0165165P
104ns
526mW
165ma
175ma
135ma
145ma;
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0165165PT3C-60
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P ADVANCED 4M X 16 1 2 / 1 0 E D O D R A M Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time
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IBM0165165B
IBM0165165P
256ms
104ns
414mW
SA14-4239-02
0165165PT3C-60
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Untitled
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ±0.3V power supply Performance: • Extended Data Out Hyper Page Mode RAS only Refresh - 4096 cycles/Retention Time
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OCR Scan
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IBM0165165B
IBM0165165P
1104ns
504mW
88H201
A14-4250-01
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PDF
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0165165PT3C-60
Abstract: IBM0165165B 0165165BT3C-60 0165165PT3C-50
Text: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/W rite • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time
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IBM0165165B
IBM0165165P
256ms
104ns
0165165PT3C-60
0165165BT3C-60
0165165PT3C-50
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PDF
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0165165BT3C-60
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: ! -50 • Extended Data Out Hyper Page Mode RAS only Refresh - 4096 cycles/Retention Time
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OCR Scan
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IBM0165165B
IBM0165165P
104ns
504mW
0165165BT3C-60
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P Preliminary 4M X 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode • CAS before RAS Refresh - 4096 cycles/retention Time
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OCR Scan
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IBM0165165B
IBM0165165P
256ms
104ns
526mW
IBM0165165P
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PDF
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Untitled
Abstract: No abstract text available
Text: Table of Contents Alphanumeric In d ex . DRAM Numbering . Quality and Reliability. Part Number Oranization . 5 . 7 . 9 Features
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IBM014400.
IBM014400P.
IBM014400M
IBM014400B.
IBM014405.
IBM014405P.
IBM0316809C.
IBM0316169C.
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0118160B
Abstract: 0116165B 014400B 0117805 014400
Text: Alphanumeric Index Part Number Type Organization Features Page Number IBM 0116160. .DRA M . . 1M x 16. 12/8, 5 . 0 V .343 IBM0116160M .D R A M . . 1 M x 16. 12/8, 5.0V, LP, S R .343
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IBM0116160M
0116160P.
0116165B.
0116165M
0118160B
0116165B
014400B
0117805
014400
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