Untitled
Abstract: No abstract text available
Text: UMH32N NPN 400mA 20V Complex Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 40V 400mA 4.7kW UMT6 (6) (1) (2) (5) (4) (3) UMH32N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors
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UMH32N
400mA
400mA
OT-353
SC-88)
DTC943TUB
R1102A
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Untitled
Abstract: No abstract text available
Text: DTC923TUB NPN 400mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Value VCEO VEBO IC R1 20V 40V 400mA 2.2kW UMT3F Collector Base Emitter DTC923TUB (SC-85) lFeatures 1) Built-In Biasing Resistors 2) High Breakdown Voltage of Emitter to Base
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DTC923TUB
400mA
400mA
SC-85)
R1102A
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Untitled
Abstract: No abstract text available
Text: UMH33N NPN 400mA 20V Complex Digital Transistors Bias Resistor Built-in Transistors For Muting. Datasheet lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 40V 400mA 2.2kW UMT6 (6) (1) (2) (5) (4) (3) UMH33N SOT-353 (SC-88) lFeatures 1) Built-In Biasing Resistors
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UMH33N
400mA
400mA
OT-353
SC-88)
DTC923TUB
R1102A
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HN4C05JU
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)
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HN4C05JU
400mA
HN4C05JU
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hn1c05FE
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)
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HN1C05FE
400mA
hn1c05FE
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Untitled
Abstract: No abstract text available
Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications Unit: mm z Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current : IC = 400mA(Max.)
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HN4C05JU
400mA
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Untitled
Abstract: No abstract text available
Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current : IC = 400mA (max)
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HN1C05FE
400mA
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50
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HN1C07F
400mA
100mA
100mA,
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KTA1021
Abstract: KTC1020
Text: SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES A ᴌExcellecnt hFE Linearity O F : hFE 2 =25Min. : VCE=6V, IC=400mA. ᴌ1 Watt Amplifier Application. H M G ᴌComplementary to KTA1021.
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KTC1020
25Min.
400mA.
KTA1021.
KTA1021
KTC1020
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transistor Marking code n03
Abstract: ic n03 DN100S DP100S marking N03 marking code N03
Text: DN100S Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC /IB =400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application
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DN100S
400mA/20mA)
DP100S
OT-23F
KST-2117-000
100mA
400mA,
transistor Marking code n03
ic n03
DN100S
DP100S
marking N03
marking code N03
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HN1C07F
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA
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HN1C07F
400mA
HN1C07F
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Untitled
Abstract: No abstract text available
Text: DN100 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC/IB=400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100 • Switching Application
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DN100
400mA/20mA)
DP100
DN100
KST-9084-000
KST-9084-000
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HN1C07F
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA
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HN1C07F
400mA
HN1C07F
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ic n03
Abstract: transistor Marking code n03 DP100S DN100S
Text: DN100S NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.15V Typ. @IC/IB=400mA/20mA) • Suitable for low voltage large current drivers • Complementary pair with DP100S • Switching Application PIN Connection
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DN100S
400mA/20mA)
DP100S
OT-23F
KSD-T5C074-000
ic n03
transistor Marking code n03
DP100S
DN100S
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KTC*3964
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC3964 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. A Switching Applications B Solenoid Drive Applications D C E Temperature Compensated for Audio Amplifier Output Stage F FEATURES G High DC current gain : hFE = 500 min (IC=400mA)
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KTC3964
400mA)
300mA)
KTC*3964
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Transistor hFE CLASSIFICATION Marking CE
Abstract: KTA511T KTC611T
Text: SEMICONDUCTOR KTC611T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES 1 ᴌExcellent hFE Linearity DIM MILLIMETERS _ 0.2 A 2.9 + 5 B G : hFE 2 =25(Min.) at VCE=6V, IC=400mA. F 4 3 CHARACTERISTIC
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KTC611T
400mA.
Pac00
600mm
Transistor hFE CLASSIFICATION Marking CE
KTA511T
KTC611T
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Untitled
Abstract: No abstract text available
Text: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE ) linearity : hFE(2) = 25 (min) at VCE = 6V, IC = 400mA
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HN1C07F
400mA
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Untitled
Abstract: No abstract text available
Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. KTC3202 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES * Excellent Hfe Linearity :Hfe 2 =25(Min) at Vce=6V, Ic=400mA. ♦Complementary toKTA1270
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KTC3202
400mA.
toKTA1270
100mA
400rnA
100mA
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KTC1020
Abstract: KTA1021
Text: SEMICONDUCTOR TECHNICAL DATA KTC1020 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellecnt Iife Linearity : hFE 2 =25Min. : V Ce =6V, Ic=400mA. • 1 Watt Amplifier Application. • Complementary to KTA1021.
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KTC1020
25Min.
400mA.
KTA1021.
T0-92M
100mA
KTC1020
KTA1021
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KTA1270
Abstract: KTC3202
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e linearity : hFE 2 =25Min. : VCE=6V, Ic=400mA. • Complementary to KTA1270.
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KTC3202
25Min.
400mA.
KTA1270.
KTA1270
KTC3202
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KTA1505
Abstract: KTC3876
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Linearity : hFE 2 =25(Min.) a t V ce =6V, Ic=400mA. • Complementary to KTA1505. DIM
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KTC3876
400mA.
KTA1505.
15/TER
OT-23
100mA
400mA
100mA,
25Min.
KTA1505
KTC3876
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2sc4118
Abstract: marking IAY 2SA1588
Text: TOSHIBA 2SC4118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 18 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS Excellent hjpg Linearity hFE(2) = 25 (Min.) (VCE = 6V, IC = 400mA)
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2SC4118
2SA1588
400mA)
961001EAA1
100mA
400mA
100mA,
2sc4118
marking IAY
2SA1588
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23 marking
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)
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KTC3876
KTA1505.
400mA.
10/--ank
100mA,
100mA
25Min.
40Min.
400mA
23 marking
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KTA1270
Abstract: KTC3202
Text: SEMICONDUCTOR TECHNICAL DATA KTC3202 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife linearity • hFE 2 =25M in. • V ce -6 V , • Complementary to KTA1270. Ic-400mA. MAXIMUM RATINGS (Ta=25°C)
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KTC3202
25Min.
400mA.
KTA1270.
KTA1270
KTC3202
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