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    IC 630 ONLY WRITTEN APPLICATION 16 PIN Search Results

    IC 630 ONLY WRITTEN APPLICATION 16 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC 630 ONLY WRITTEN APPLICATION 16 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6CS transistor

    Abstract: transistor 6cs
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs PDF

    egs SOT23

    Abstract: BC817K-40 thermal resistance
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* egs SOT23 BC817K-40 thermal resistance PDF

    BC817-40 INFINEON

    Abstract: Thermal CUTOFF 6AS SOT23
    Text: BC817, BC818 NPN Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16 6As 1=B 2=E


    Original     		BC817, BC818 BC807, BC808 VPS05161 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817-40 INFINEON Thermal CUTOFF 6AS SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16


    Original     		BC817, BC818 BC807, BC808 BC817-16 BC817-25 BC817-40 BC818-25 BC818-40 VPS05161 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC817W, BC818W NPN Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC807W, BC808W PNP 1 Pin Configuration VSO05561 Type Marking Package


    Original     		BC817W, BC818W BC807W, BC808W VSO05561 BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As


    Original     		BC807, BC808 BC817, BC818 BC807-16 BC807-25 BC807-40 BC808-25 BC808-40 VPS05161 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807W, BC808W PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking Package


    Original     		BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC808-16W BC808-25W PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807, BC808 PNP Silicon AF Transistors 3  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage 2  Comlementary types: BC817, BC818 NPN 1 Type Marking Pin Configuration BC807-16 5As 1=B 2=E


    Original     		BC807, BC808 BC817, BC818 VPS05161 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking


    Original     		BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W OT323 BC807-25W BC807-40W PDF

    marking 6bs

    Abstract: sot323 marking code A.C
    Text: BC817W, BC818W NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807W, BC808W PNP 1 Pin Configuration VSO05561 Type Marking


    Original     		BC817W, BC818W BC807W, BC808W VSO05561 BC817-25W BC817-40W BC818-16W OT323 marking 6bs sot323 marking code A.C PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B


    Original     		BCW66 BCW68 BCW66F BCW66G BCW66H PDF

    bcw66

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B


    Original     		BCW66 BCW68 BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* bcw66 PDF

    egs SOT23

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B


    Original     		BCW66 BCW68 BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* BCW66 BCW66K egs SOT23 PDF

    BC817-40 INFINEON

    Abstract: 4 pin 817 BC817 INFINEON
    Text: BC817, BC818 NPN Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC807, BC808 PNP 1 Type Marking Pin Configuration BC817-16


    Original     		BC817, BC818 BC807, BC808 VPS05161 BC817-16 BC817-25 BC817-40 BC818-25 BC818-40 BC817-40 INFINEON 4 pin 817 BC817 INFINEON PDF

    Untitled

    Abstract: No abstract text available
    Text: BC807W, BC808W PNP Silicon AF Transistors 3 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage 2 • Complementary types: BC817W, BC818W NPN 1 Pin Configuration VSO05561 Type Marking


    Original     		BC807W, BC808W BC817W, BC818W VSO05561 BC807-16W BC807-25W BC807-40W BC808-25W BC808-40W PDF

    6as sot23

    Abstract: marking 6bs 1B marking transistor marking 6Bs BC817K-40W
    Text: BC817K./BC818K. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-free RoHS compliant package • Qualified according AEC Q101 Type Marking Pin Configuration


    Original     		BC817K. /BC818K. BC817K-16 BC817K-16W BC817K-25 BC817K-25W BC817K-40 BC817K-40W BC818K-16W BC818K-40 6as sot23 marking 6bs 1B marking transistor marking 6Bs PDF

    5Cs transistor

    Abstract: 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs
    Text: BC807./ BC808. PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817./W, BC818./W NPN Type Marking Pin Configuration BC807-16


    Original     		BC807. BC808. BC817. BC818. BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W 5Cs transistor 5BS transistor marking 5bs 5as package package marking 5as transistor 5bs PDF

    transistor 6cs

    Abstract: 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W OT323 transistor 6cs 6CS transistor 6as sot23 marking 6CS BC808 BC817 6bs transistor BC817-25 BC817-25W BC817K-16 PDF

    bc817

    Abstract: No abstract text available
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W OT323 BC817-40 BC817-40W bc817 PDF

    MARKING SOT23 dbs

    Abstract: No abstract text available
    Text: BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary types: BCW66. NPN Type Marking Pin Configuration Package BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B


    Original     		BCW67, BCW68 BCW66. BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67 MARKING SOT23 dbs PDF

    BC847S

    Abstract: SC70-6
    Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier


    Original     		BC847S SC70-6 BC847S SC70-6 PDF

    UBA2021T

    Abstract: UBA2021P philips cfl UBA2021 transistor smd CF rs
    Text: INTEGRATED CIRCUITS DATA SHEET UBA2021 630 V driver IC for CFL and TL lamps Product specification Supersedes data of 2001 Jan 30 2002 Aug 02 Philips Semiconductors Product specification 630 V driver IC for CFL and TL lamps UBA2021 FEATURES GENERAL DESCRIPTION


    Original     		UBA2021 UBA2021 SCA74 613502/03/pp20 UBA2021T UBA2021P philips cfl transistor smd CF rs PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DATA SHEET UBA2021 630 V driver IC for CFL and TL lamps Product specification File under Integrated Circuits, IC11 2000 Jul 24 Philips Semiconductors Product specification 630 V driver IC for CFL and TL lamps UBA2021 FEATURES GENERAL DESCRIPTION


    Original     		UBA2021 613502/01/pp20 PDF

    MCM91000

    Abstract: motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)


    OCR Scan     		MCM9L1000 30-lead 30-pin CM511000A MCM511000A 9L1000 MCM91000AS70 MCM91000AS00 M91000AS MCM9L1000AS70 MCM91000 motorola mcm91000s PDF