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    IC AL 03 Search Results

    IC AL 03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC AL 03 Price and Stock

    Standex-Meder Electronics ALNICO500 4X19MM

    Sensor Hardware & Accessories Permanent Magnet ALNICO 4.0x19.0mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ALNICO500 4X19MM 366
    • 1 $0.94
    • 10 $0.635
    • 100 $0.581
    • 1000 $0.581
    • 10000 $0.581
    Buy Now

    Standex-Meder Electronics ALNICO500 19X3.2X3.2MM

    Sensor Hardware & Accessories Permanent Magnet AlNiCo 19x3.2x3.2mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ALNICO500 19X3.2X3.2MM 157
    • 1 $1.37
    • 10 $1.08
    • 100 $1.04
    • 1000 $1.04
    • 10000 $1.04
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    Standex-Meder Electronics ALNICO500 2.5X12.7MM

    Sensor Hardware & Accessories Permanent Magnet ALNICO 2.5x12.7mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ALNICO500 2.5X12.7MM 59
    • 1 $1.82
    • 10 $1.32
    • 100 $1.07
    • 1000 $1.07
    • 10000 $1.07
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    Taoglas Antenna Solutions MA350.A.LBICG.003

    Antennas MAGNET MOUNT COMBO ANTENNA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MA350.A.LBICG.003 18
    • 1 $218.89
    • 10 $211.79
    • 100 $211.79
    • 1000 $211.79
    • 10000 $211.79
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    Infineon Technologies AG EVALPFC2ICE2PCS03TOBO1

    Power Management IC Development Tools 300W PFC Evaluation Board with CCM PFC controller ICE2PCS03
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVALPFC2ICE2PCS03TOBO1 2
    • 1 $137.5
    • 10 $137.5
    • 100 $137.5
    • 1000 $137.5
    • 10000 $137.5
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    IC AL 03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MV-S100649-00

    Abstract: Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111
    Text: 7v u3 M 1z AR zf VE nu LL a-e CO 468 NF 1d ID ge EN * M 7v TI ar u3 AL ve M 1z , U ll S AR zf ND em VE nu ER ic LL a-e NDond CO 468 A# uc NF 1d 02 tor, ID ge EN * M 13 In 03 c. TI ar AL ve , U ll S ND em ER ic NDond A# uc 02 tor, 13 In 03 c. MARVELL CONFIDENTIAL


    Original
    PDF 88E1111 MV-S100649-00, 7vu31zzfnua-e4681dge MV-S100649-00 Marvell 88e1111 register map Marvell PHY 88E1111 Marvell PHY 88E1111 application note 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell 88E1111 application note 88E1111 full Marvell 88E1111

    GM1300

    Abstract: No abstract text available
    Text: CORPORATION GM1300 ISSUED DATE :2006/03/14 REVISED DATE : P NP S ILI CO N EP ITAX I AL T RANS I STOR Description The GM1300 is designed for medium power amplifier applications. Features hFE 1 =140~1000 (@VCE=-1V, IC=-0.5A) hFE(2)=60 (Min.) (@VCE=-1V, IC=-2A)


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    PDF GM1300 GM1300 -50mA) OT-89

    Untitled

    Abstract: No abstract text available
    Text: GM71C4270A/AL GM71CS4270A/AL GoldStar 262,144 WORDSX16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM 71C4270A/AL is the new generation dynam ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM 71C4270A/AL has realized higher density,


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    PDF GM71C4270A/AL GM71CS4270A/AL WORDSX16BIT 71C4270A/AL GM71C4270A/AL 95JMAX

    auo 014

    Abstract: No abstract text available
    Text: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,


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    PDF GM71C4260A/AL GM71CS4260A/AL X16BIT GM71C4260A/AL 71C4260A/AL 71CS4260A/AL auo 014

    4800AZ

    Abstract: Lj70 GM71C4800
    Text: GM71C4800A/AL GM71CS4800A/AL GoldStar 524,288 WORDS X8BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The G M 71C4800A/AL is the new generation d ynam ic RAM organized 5 2 4 ,2 8 8 x 8 B it. G M 71C4800A/AL has realized higher density,


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    PDF GM71C4800A/AL GM71CS4800A/AL 71C4800A/AL 71C4800A 402A7S7 4800AZ Lj70 GM71C4800

    tl 0741

    Abstract: No abstract text available
    Text: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing


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    PDF GM71C4800A/AL GM71CS4800A/AL 71C4800A/AL GM71CS4800A/AL tl 0741

    Untitled

    Abstract: No abstract text available
    Text: GM71V65163A GM71VS65163AL LG Semicon Co.,Ltd. ’ 4,196,304 W ORDS x 16 BIT CM OS DYNAM IC RAM Description Pin Configuration The GM 71V S 65163A/AL is the new generation dynam ic RAM organized 4,196,304 words by 16 bits. The G M 71V(S)65163A/AL utilizes advanced


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    PDF GM71V65163A GM71VS65163AL 5163A/AL 128ms

    gm71c4270a

    Abstract: No abstract text available
    Text: GM71C4270A/AL GM71CS4270A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAM IC RAM Description Features The GM 71C4270A/AI. is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing


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    PDF GM71C4270A/AL GM71CS4270A/AL 71C4270A/AI. 71C4270A/AL GM71CS4270A/AL gm71c4270a

    GM7IC

    Abstract: No abstract text available
    Text: GM71C4400A/AL P2J G o l d S t a r iBBA GOLDSTAR ELECTRON CO., LTD. 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density


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    PDF GM71C4400A/AL GM71C4400A/AL 300-mil 20-pin 400-mil 300-mil GM7IC

    Untitled

    Abstract: No abstract text available
    Text: GM71V65403A GM71VS65403AL LG Semicon Co.,Ltd. 16,777,216 WORDS x 4 BIT* CM OS DYNAM IC RAM Description Pin Configuration 32 S O J /T S O P I I The GM71 V S 65403A/AL is the new generation dynam ic RAM organized 16,777,216 w ords by 4bits. The G M 71V(S)65403A/AL utilizes advanced CM OS


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    PDF GM71V65403A GM71VS65403AL 5403A/AL GN171V GM71V 5403A/AL TSOPII32 6S403A/AL

    gm71c4400az

    Abstract: No abstract text available
    Text: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­


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    PDF GM71C4400A/AL GM71C4400A/AL 300-mil 20-pin 400-mil 300-mil gm71c4400az

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514100A/AL 4,194,304-Word x 1-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM514100A/AL 304-Word MSM514100A/AL cycles/16ms, cycles/128ms AO-A10

    A2H3

    Abstract: transistor A5G TRC 561 a3 diagram 20-PIN 26-PIN ZIP20-P-400-W1 A2E3
    Text: O K I Semiconductor MSM5 1 4 1 0 1 A/AL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The M SM 514101A/AL is a new generation dynam ic RAM organized as 4,194,304-w ord x 1-bit. The technology used to fabricate the M SM 514101A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM514101A/AL 304-Word MSM514101A/AL cycles/16ms, cycles/128ms 2M24D MSM514101 A2H3 transistor A5G TRC 561 a3 diagram 20-PIN 26-PIN ZIP20-P-400-W1 A2E3

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


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    PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics

    Untitled

    Abstract: No abstract text available
    Text: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS


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    PDF GM76C8128A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) 402A7S7

    514100A

    Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 AOA10
    Text: O K I Semiconductor MSM5 1 41OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100A/AL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM514100 304-Word MSM514100A/AL 1024cycles/16ms, 1024cycles/128ms A0-A10 514100A 20-PIN 26-PIN ZIP20-P-400-W1 AOA10

    TA7630P

    Abstract: bass treble volume control for 2 channel using IR
    Text: TOSHIBA TA7630P D U AL. VOLUMC/BALArJCE/TOriE C A S S / T R E D L C DC CONTROL IC The TA7630P is DC controlled dual volume, balance, tone (Bass, treble) IC. As these dual channels are constructed on one chip, this IC is excellent in pair characteristic.


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    PDF TA7630P TA7630P 100Hz 20kHz RATINGS15 bass treble volume control for 2 channel using IR

    GM76C8128all

    Abstract: 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85
    Text: Ö6Z bZL GM76C8128A/AL/ALL GZ! GoldStar 131,072 W ORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access m em ory organized as 131,072 w ords by 8 bits. U sing a 0.8um advanced CMOS


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    PDF GM76C8128A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) 70/8uuULJUUUU Gi\176C8128A/AL/ALL GM76C8128all 76C8128 GoldStar gm76c8128 367 al al85 76C812 al 85

    Untitled

    Abstract: No abstract text available
    Text: G M 7 6 C 8 128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON C O , LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS


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    PDF 28A/AL/ALL GM76C8128A/AL/ALL 70/85/100ns. 32-pin 600mil) GM76C8128A/AL/ALL

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514 4 1 OA/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE WRITE PER BIT MODE TYPE DESCRIPTION The MSM514410A/AL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514400A/AL is OKI's CMOS silicon gate process technology.


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    PDF MSM514 576-Word MSM514410A/AL 576-w MSM514400A/AL cycles/16ms, cycles/128ms b724240 MSM51441OA/AL

    BCW71 AG

    Abstract: No abstract text available
    Text: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A


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    PDF flS13 G003L BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A BCW71 AG

    M514800A

    Abstract: m514800
    Text: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher


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    PDF M514800A/AL HM51S4800A/AL 288-word HM514800A 400-mil 28-pin M514800A m514800

    HA21006MP

    Abstract: No abstract text available
    Text: HA21006MP BS Tuner Use GaAs IC Application G aA s m onolithic IC BS tuner Features • BS tuner IC include m ixer, R F A G C , IF AGC • O p eratio n al in all BS frequency 0.95 to 1.75 G H z • S urface m ount package Absolute Maximum Ratings (Ta = 25°C)


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    PDF HA21006MP HA21006MP

    Untitled

    Abstract: No abstract text available
    Text: S P R A G U E / S E M I C O N DG R O U P 8514019 SPRAGUE. ^3 D • f l S 13f l S 0 0003^12 0 S E M IC O N D S/ IC S 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELEC TR IC AL CHARACTERISTICS at TA = 25°C Vgs oh V(BH)GSS Device


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    PDF TMPF2608 TMPF2609 TMPF3329 TMPF3330 TMPF3331 TMPF3332 TMPF3820 TMPF3993 TMPF3994 TMPF4381