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    IC LM 386 Search Results

    IC LM 386 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC LM 386 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


    Original     		PDF

    2mb175

    Abstract: 2mb175l-120 2MB175L-060 2mb1200 2MB125L-120 2mb1150l120 2mb1200f-060 2mb1300 2MB125F-120 2MB1150L-120
    Text: = m o ía ^ fí. ü o s ^ - m L Ä i ^ ü E 8 2 9 8 8 M ) B1 82 til. m. V cES Si V CES Ic ft * I CP Pc I F T, T .t, V iao -il (lm s ) (V ) (V ) (A ) (A ) (lm s ) (A ) (A ) CW ) (°C ) (°C ) 1 GES V GE (m A ) (V ) fi (V ) ft ^ X "vö T (V ) &2. (V ) ft


    OCR Scan     		PDF 71l-rf- H-101 2mb175 2mb175l-120 2MB175L-060 2mb1200 2MB125L-120 2mb1150l120 2mb1200f-060 2mb1300 2MB125F-120 2MB1150L-120

    4a2d

    Abstract: CM200DY-12E CM75E3Y-12E CM100E3Y-12E CM50TF-12E CM400DY-12E CM150DY-12E CM150E3Y-12E CH400HA-12E CM75DY-12E
    Text: 266'îÿ a - iV i/ i n y N f t í A I G BT) a i. ft m V g CES (V ) V sBS CV) * Æ Ic « I CP « ( T , =25°C) If U p Pc Ti (it i) (lm s) (a n (lm s) m ) (A ) CA) (A ) (A ) (W ) OC) T . V ,. (3 2 ) Ä re ) (V ) ft X # V CES GES CnAJ W V ge (V) CmA) ft


    OCR Scan     		PDF H-101 4a2d CM200DY-12E CM75E3Y-12E CM100E3Y-12E CM50TF-12E CM400DY-12E CM150DY-12E CM150E3Y-12E CH400HA-12E CM75DY-12E

    Untitled

    Abstract: No abstract text available
    Text: BU4SU69 D I I ^ C I IA O single inverter • ftff^ & m /D lm e n s io n s U n it: mm BU4SU69 IJ, l< v 7 7 U 1 > A - 9 BU4069UB <D 1 b SMPlC|*j*Ufc8/JvS!IC?to 1 SgrofcftfsitBilSliFiK i o T V ' S t , The BU4SU69 is an ultra-small IC with a SM P integrat­


    OCR Scan     		PDF BU4SU69 BU4069UB BU4069UB. BU4SU69

    H-17

    Abstract: H-18 H-19
    Text: = m o s ^ - o ía ^ f í. ü L Ä i^ m ü E 8 2 9 8 8 M ) B1 82 til. m. V cES Si V CES Ic -il ft * I CP I Pc F (lms) (lm s ) T, T .t, V iao c m W ) I 1 GES ( n A) V CES V GE (mA) (V) ft "vö T T c= 2 5 5Co &2. Ic V CE (V ) 6 20 6 20 600 3 6 20 50 2.5 15


    OCR Scan     		PDF 71l-rf- -40-125ab H-101 H-17 H-18 H-19

    nv470d10

    Abstract: NV200D10 NV430D10 NV390D10 NV360D10 NV620D10 TA8250 NV780D10 NV270D10 NV082D10
    Text: - 331 h M w v m \0 i i7.5±1 ¡± 1 D C lm A ^ « iI^ ifL L / ^ ¿ # í0 ^ í« l± '< 'J x . í ’f c J E í & l ) ic £ [V] CV) ft ñ í § [H ÍS ^ f± DC AC 50 60Hz • [V] (V) x % ¡i-% V. IMk* (J) Cw) it (v) Ip [A] Jrf — : y ít K ( 8 X 20; í s )


    OCR Scan     		PDF 8x20ps) NV022D1Ã NV027D10 NV033D10 NV039D10 NV047D10 H-101 nv470d10 NV200D10 NV430D10 NV390D10 NV360D10 NV620D10 TA8250 NV780D10 NV270D10 NV082D10

    2SA1532

    Abstract: 2SC3775 2SC3862 2SC3930
    Text: - Il À È te 3i e •2 SC 3862 tm - MS £ : U H F TV UHF Vceo V Ve b o (V) lc(mA) Pc(mf) TjCC) (ZSC3120 B, E fé fi 9 3 © S tt 15 a M '1' * fr(GHz) * 1 0 0 .0 0 200. 00 0.10 40.00 50 Cre(pF) 150 m m I cbo (M ) 3 hFE fé W 0. 60 1. 50 0.90 « te 5E


    OCR Scan     		PDF 2SC3862 2SC3775 2SC3930 2SA1532 200MHz

    Untitled

    Abstract: No abstract text available
    Text: ¿¡0 Stanford Microdevices Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT M MIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth


    OCR Scan     		PDF SLN-386 SLN-386

    ic LM 386

    Abstract: g1760
    Text: Skin ford M ierotleviees Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high performance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth


    OCR Scan     		PDF SLN-386 ic LM 386 g1760

    Untitled

    Abstract: No abstract text available
    Text: ell Stanford Microdevices Product Description SLN-386 Stanford M icrodevices’ SLN-386 is a high perform ance GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost 85 mil (2.2mm) diam eter plastic package. This HBT MMIC is fabricated using m olecular beam epitaxial growth


    OCR Scan     		PDF SLN-386

    Untitled

    Abstract: No abstract text available
    Text: S l. :i u r , . Mkii:*.!«."» •.'l- Product Description SNA-386 Stanford M icrodevices’ SNA-386 is a GaAs m onolithic broadband am plifier MMIC housed in a low-cost surfacemountable plastic package. This am plifier provides 21 dB of gain when biased at 35m A and 4V.


    OCR Scan     		PDF SNA-386 SNA-386 SNA-300)

    386D

    Abstract: 2SB996 2SD1356
    Text: "5b TOSHIBA {DISCRETE/OPT0> DeT J t O ^ E S D 00073flb 3 | y 9097250 TOS HIB A {D I S C R E T E / O P T O •' 56C Ö7 386 D f - 3 3 ‘W S IL IC O N PNP T R IP LE D IF F U SE D TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm l a 3 MAX. FEATURES: 03.2*0.2


    OCR Scan     		PDF 00073flb 2SD1356 50X2mm 386D 2SB996 2SD1356

    SB30-03P

    Abstract: marking sg n3868
    Text: O rd e rin g n u m b e r :EN 3868 SANYO SB30-03P No.3868 Silicon Epitaxial Schottky Barrier Diode i 30V, 3A Rectifier A pplications • High frequency rectification switching regulators, converters, choppers . F eatu res • Low forward voltage (Vp max = 0.55V).


    OCR Scan     		PDF SB30-03P SB30-03P marking sg n3868

    AR1310

    Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
    Text: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 _ «OHI C hicago M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e Cross R e fe re n c e Competitor Page


    OCR Scan     		PDF TLY114AQ TLY118P TLY123 TLY124 TLY132 TLY133A TLY134A TLY143 TLY144 AR1310 AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945

    74ls314

    Abstract: SN75450BN RM741DC 74LS208 MC1711G 74s214 SN75361AP 74LS207 RS 75491 MC1741L
    Text: PRODUCT RANGE PAGE M IC R O P R O C E S S O R S 2-21 M E M O R IE S MOS M IC R O P R O C E S S O R S & S U P P O R T C IR C U IT S 2 2 -2 7 28 2 9 -3 0 DTL TTL L IN E A R IN T E R F A C E C IR C U IT S 5 5 / 7 5 S e rie s C o n tr o l C ir c u its C ro s s -R e fe re n c e G u id e


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    TT 2158

    Abstract: LM386 CF-S-2158 LM386MM-1 DS006976 LM386MM1 LM386N-3 LM381N 94741 eldema
    Text: & Semiconductor LM386 Low Voltage Audio Power Amplifier General Description Features The LM386 is a pow er a m plifier designed for use in low v o lt­ age co nsum er applications. Th e gain is internally set to 20 to keep external part count low, but the addition of an external


    OCR Scan     		PDF LM386 TT 2158 CF-S-2158 LM386MM-1 DS006976 LM386MM1 LM386N-3 LM381N 94741 eldema

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		PDF LM741 MIL-M-38510, M-38510/ 10101BCC. MIL-M-38510 L-M-38510 LM1808 LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor

    EN3866

    Abstract: 38661
    Text: Ordering num ber:EN3866 SB30W03Z No.3866 Schottky B arrier Diode Twin Type •Cathode Common SAttfm 30V, 3A Rectifier A pplications ■High frequency rectification (switching regulators, converters, choppers). F e a tu re s • Low forward voltage (Vp max = 0.55V).


    OCR Scan     		PDF EN3866 SB30W03Z EN3866 38661

    AM97C11CN

    Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
    Text: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits


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    Untitled

    Abstract: No abstract text available
    Text: 12 11 10 W IRE R A N G E M A T E R IA L NO. ASSEM BLY ENG . NO. MARKING X X X X X HOUSING COLOR 192160017 W TB-1814 18-14 AWG BLUE 192160018 W T B -22-18 2 2 -1 8 AWG RED 192160019 WTB-12 12 AWG YELLOW ASSEM BLY 8 19216 H 1.457 37.01 R E F .- A -A 1 1 .386


    OCR Scan     		PDF WTB-1814 WTB-22-18 WTB-12 SD-19216-007

    2n3773 power Amplifier circuit diagrams

    Abstract: 10000 watt stabilizer transformer winding formula 2N3773 audio amplifier diagram lm380 equivalent LM566 "direct replacement" LM1820 LM1800 schematic diagram audio power amplifier using 2n3055 mc1349 GS 358S
    Text: Volume 2 National P R E F A C E The second volum e o f N a tio n a l's Linear A p p lic a tio n s h a n d b o o k picks up w here V o lu m e I le ft o ff. Data sheets, a p p lic a tio n briefs and p e rtin e n t articles published in th e 3 years since V o lu m e I was p rin te d are


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    jh32

    Abstract: No abstract text available
    Text: ICS9133X Integrated Circuit Systems, Inc. 32 kHz Motherboard Frequency Generator General Description Features T he IC S 9 1 3 3 X is d e sig n e d to g e n erate c la c k s fo r all 286, 386, 486, P e n tiu m an d R IS C -b a sed m o th e rb o a rd s, in clu d in g la p ­


    OCR Scan     		PDF ICS9133X ICS9133X-01CN20 ICS9133X-01CW20 jh32

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
    Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­


    OCR Scan     		PDF LB20-2 2N2369 AVALANCHE PULSE GENERATOR 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918

    DBC-02

    Abstract: DBC02 PCX35 DENSITRON plasma 400x640 64 x 240 densitron LMG641 SPX20
    Text: "M l : ' -J ; ' li.s« : ! • ■ DENSITRON LARGE GRAPHICS DISPLAYS J/\/V '94 — . c — S in Mg I - SUPERTWIST GRAPHIC MODULES D IS P L A Y M O D U LE DOT PITC H SCREEN V IE W IN G O V E R A LL S IZ E FO R M A T N U M BER W x H mm DI A G AREA W x H x D (mm )


    OCR Scan     		PDF 198x66 197x125 15x163 97x149 179x135 G6647 G6487 G6460: J26914 DBC-02 DBC02 PCX35 DENSITRON plasma 400x640 64 x 240 densitron LMG641 SPX20