hall effect transistor 502a
Abstract: SENSOR HALL 505A SENSOR HALL 504A 502a hall sensor power supply ps 3003 hall 502a Y0401 Transistor 115e HAL506 hal556
Text: HAL1 15 Hall Effect Sensor IC Edition May 7, 1997 6251-414-1 OS INTERMETALL HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Type Temperature Range Features: - operates from 4.3 to 24 V supply voltage with reverse voltage protection - operates with magnetic fields from DC to 20 kHz
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HAL115
6251-425-l
hall effect transistor 502a
SENSOR HALL 505A
SENSOR HALL 504A
502a hall sensor
power supply ps 3003
hall 502a
Y0401
Transistor 115e
HAL506
hal556
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analog device 5A marking
Abstract: transistor 6c x part marking lvb 74 standard TTL USB3.0 to SATA3 Bridge 49FCT 74 series family Pericom Fast CMOS C code for crossbar switch 85C49
Text: Ordering Information CLOCK IC PI 49FCT/6C XX XXXXX XX X X X Blank = Tube; X = Tape & Reel PERICOM IC PACKAGING Pericom offers a wide range of advanced packaging solutions to fit any application including TSSOP, QFN, DFN, LFBGA, and SOTiny . Use these marking guides to order the correct device for your
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49FCT/6C
analog device 5A marking
transistor 6c x
part marking lvb
74 standard TTL
USB3.0 to SATA3 Bridge
49FCT
74 series family
Pericom Fast CMOS
C code for crossbar switch
85C49
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Untitled
Abstract: No abstract text available
Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100
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BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC846A
BC846B
BC847A
BC847B
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AS179-92
Abstract: 13MHZ NDK MC13180 MC13180FC MC71000 MC9328MX1 QFN-48 transmitter lut gfsk
Text: Technical Data MC13180/D Rev. 0, 11/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package MC13180FC MC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the
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MC13180/D
MC13180
QFN-48)
MC13180FC
QFN-48
MC13180
AS179-92
13MHZ NDK
MC13180FC
MC71000
MC9328MX1
QFN-48
transmitter lut gfsk
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PC1318
Abstract: BIPOLAR MOTOROLA 2N J1 TRANSISTOR DIODE SOT-23 PACKAGE PC13180FC 13MHZ NDK MARKING 12p SOT-23 RF loop antenna 13Mhz transistor marking code 7E SOT-23 MC13180 MC71000
Text: Product Preview MC13180PP/D Rev. 2, 08/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package PC13180FC PC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the
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MC13180PP/D
MC13180
QFN-48)
PC13180FC
QFN-48
MC13180
PC1318
BIPOLAR MOTOROLA 2N
J1 TRANSISTOR DIODE SOT-23 PACKAGE
PC13180FC
13MHZ NDK
MARKING 12p SOT-23
RF loop antenna 13Mhz
transistor marking code 7E SOT-23
MC71000
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FAN7602
Abstract: AN6014 AN-6014 PN2907
Text: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*
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PN2907
MMBT2907
PN2907
OT-23
PN2907A
O-92-3
AN-4129:
FAN7601
FAN7602
AN6014
AN-6014
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Untitled
Abstract: No abstract text available
Text: ISDN transformer UK0 interface, 2B1Q EP 13, 14.47 mH, 1:1:1 Ordering code: B78421A1720A003 Date: March 2008 Data Sheet EPCOS AG 2008. Reproduction, publication and dissemination of this publication and the information contained therein without EPCOS’ prior express consent is prohibited.
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B78421A1720A003
FIN0146-Y-E
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Untitled
Abstract: No abstract text available
Text: ISDN transformers UK0 interface, 2B1Q RM 6, 14.44 mH, 1:1:1 Series/Type: B78386P1580A005 7f
fÁRspp
October 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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B78386P1580A005
FIN0142-S-E
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON Keramik-Kondensatoren fur die Unterhaltungs-Elektronik Ceramic Capacitors for entertainment electronics Roederstein Keram ische Im puls-Scheibenkondensatonen, Klasse 2 C eram ic pulse disc capacitors, class 2 Ausfuhrung / Design: Kennzeichnung / Marking:
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D880 voltage regulator
Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5
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OT-23
KST06
KST05
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71
BCX71H
D880 voltage regulator
B0244C
TIP28C
transistor d880
VOLTAGE REGULATOR D880
D880 TRANSISTOR
TIP28
A992 transistor
E13009
ksd-180
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TMPT404
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D
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G5DM33Ö
0D03b07
BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW67A
BCW67B
TMPT404
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)
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MT58LC128K16C6
100-pin
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC i h3E D • blllSMT G G Q ñ 2 n BS7 H M R N MT16D88C51232 512K x 32,1 MEG x 16 IC DRAM CARD I 2 MEGABYTES IC DRAM CARD 512K x 32, 1 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing
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MT16D88C51232
88-Pin
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MT52C9022
Abstract: No abstract text available
Text: |U |IC=RO N MT52C9022 2K x 9 FIFO FIFO 2K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • OPTIONS • Timing 15ns access 20ns access 25ns access 35ns access PIN ASSIGNMENT Top View 28-Pin DIP (SA-4) ERAEF XÔ/HF/FE MARKING 09 [
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MT52C9022
28-Pin
MTS2C9022
10-BYTE
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T2D19
Abstract: No abstract text available
Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM
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MT2D18
30-pin
MT2D18M-6
DG113SQ
T2D19
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TMPT404
Abstract: No abstract text available
Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A
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MT1805
Abstract: No abstract text available
Text: M IC R O N 512K DRAM MODULE 512K X X MT18D51236 36 DRAM MODULE 36 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View OPTIONS 72-Pin SIMM (T-12) MT18D51236M/G MARKING • T im ing 60ns access 70ns access 80ns access P ackages L ead less 7 2 -p in SIM M
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MT18D51236
72-pin
512-cycle
MT18D51236M/G
MT18051236
MT1805
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Untitled
Abstract: No abstract text available
Text: M IC R O N MT8C8256 256K X DRAM MODULE DRAM REFRESH: 512 CYCLE/8MS PIN ASSIGNMENT Top View 30 PIN SIMM (MM) Vcc CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PRB DQ8 NC RAS NC NC Vcc MARKING • Tim ing 80ns access 100ns access
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MT8C8256
30-pin
120mW
1200mW
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BCX70RG
Abstract: BCX70RK BCX70RJ
Text: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb
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O-236)
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC846A
BC846B
BC847A
BCX70RG
BCX70RK
BCX70RJ
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RM73Z1J
Abstract: RM73Z1E 931 2b RN73E2A 536 E .2H RM73B1J RK73H KOA rn73e 2a0805
Text: XOA A P P E N D IX A FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. PACKAGING & MARKING P A C K A G IN G S P E C IF IC A T IO N S PAC K AG IN G METHOD M ARKING S IZ E CODE T PU N C H ED PA PER 1E 0402 5000/10000 1J (0603) 5000 / 10000 1000 2A (0805) 5000/ 10000 4000 / 10000
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RM73B1E
RM73B1J
RK73H
RM73B2A
RK73H2A
RM73Z1E
RM73Z1J
RN73T2A
RN73E2A
931 2b
536 E .2H
RM73B1J
RK73H KOA
rn73e
2a0805
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CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
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CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
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W15NA
Abstract: No abstract text available
Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14
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E3fl33T4
BC849
BC850
BC849B
BC849C
BC850B
8C850C
W15NA
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BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
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BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
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Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
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CMBT2907
CMBT2907A
150mA;
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