SOT89 transistor marking
Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Text: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications
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OT-563
OT-523
OT-23
OT-89
OT-223
OT-228
600mA
500mA
CMLT5551HC
OT-563)
SOT89 transistor marking
SOT89 MARKING CODE
PNP TRANSISTOR "SOT89"
marking code NA sot23
Transistor 5C5
"PNP Transistor"
PNP TRANSISTOR SOT89
PNP Epitaxial Silicon Transistor sot223
sot89 "NPN TRANSISTOR"
NPN transistor collector base and emitter
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CMUT5401
Abstract: No abstract text available
Text: Central TM Semiconductor Corp. CMUT5401 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
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CMUT5401
OT-523
100MHz
28-October
CMUT5401
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Untitled
Abstract: No abstract text available
Text: CMUT5401 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier
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CMUT5401
OT-523
100MHz
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CMUT5401
Abstract: IC MARKING 54C
Text: CMUT5401 Central TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high
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CMUT5401
OT-523
100MHz
29-May
CMUT5401
IC MARKING 54C
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CMUT5401
Abstract: No abstract text available
Text: CMUT5401 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier
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CMUT5401
OT-523
100MHz
CMUT5401
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Untitled
Abstract: No abstract text available
Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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BDX53B,
BDX53C
BDX54B,
BDX54C
BDX53C,
O-220AB
BDX53B
BDX54B
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diac kr 206
Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com
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element14
diac kr 206
BAS70WT
SMBJ11CA
FR107 SOD-123
db1 diac
EX 0045 bm diode zener
10A06 sources
812 6V8A
Zener Diode pev LF marking
PL 15Z DIODE
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BOX 53C IC
Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
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BDX53B,
BDX53C
BDX54B,
BDX54C
BDX53B/D
BOX 53C IC
BOX 53C darlington power transistor
box 54c IC
BDX53BG
BDX54CG
pin orientation for bdx53c transistor
BDX54B
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Untitled
Abstract: No abstract text available
Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
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BDX53B,
BDX53C
BDX54B,
BDX54C
BDX53C,
BDX53B/D
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box 53c
Abstract: BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B
Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
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BDX53B,
BDX53C
BDX54B,
BDX54C
BDX53C,
BDX53B/D
box 53c
BDX53BG
100 amp npn darlington power transistors
AMP contact assembly
bdx53cg
5 amp npn darlington power transistors
500 watts amplifier
box 53c IC
1N5825
BDX53B
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pin orientation for bdx53c transistor
Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc
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BDX53B,
BDX53C
BDX54B,
BDX54C
BDX53C,
BDX53B/D
pin orientation for bdx53c transistor
box 54c IC
BDX53B
1N5825
BDX53BG
BDX53C
BDX53CG
BDX54B
BDX54C
MSD6100
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GM5WA06270A
Abstract: PT202MR0MP1 GM1WA55360A GM4BC13300AC GM4JV81200AE GM5WA05260A GM5WA05360A GM5WA06250A GM5WA06260A ISO100
Text: Chip LEDs for Mobile Products Mobile Phone Digital Still Camera PDA SHARP High Luminosity Chip LEDs add live colors to Mobile Products In the application of mobile products, Light Emitting Diode LED is widely used for the back light or the indicator, taking advantage of
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FT001K
GM5WA06270A
PT202MR0MP1
GM1WA55360A
GM4BC13300AC
GM4JV81200AE
GM5WA05260A
GM5WA05360A
GM5WA06250A
GM5WA06260A
ISO100
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TLE4954C-E2
Abstract: TLE4954
Text: TLE4954C/51C Differential Hall Effect Transmission Speed Sensors TLE4954C TLE4954C-E1 TLE4954C-E2 TLE4954C-E4 TLE4954CB TLE4954CB-E1 TLE4954CB-E2 TLE4951C TLE4951CB Product Information 2013-10-15 Sense & Control TLE4954C/51C Table of Contents Table of Contents
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TLE4954C/51C
TLE4954C
TLE4954C-E1
TLE4954C-E2
TLE4954C-E4
TLE4954CB
TLE4954CB-E1
TLE4954CB-E2
TLE4951C
TLE4951CB
TLE4954C-E2
TLE4954
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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Untitled
Abstract: No abstract text available
Text: XC6127 Series ETR0217-005 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser
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XC6127
ETR0217-005
800ms.
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XC6127
Abstract: XC6127N XC6127C 433k u XC6127N15A
Text: XC6127 Series ETR0217-007 Ultra Small Voltage Detector with High Precision Delay Circuit and Manual Reset Function •GENERAL DESCRIPTION XC6127 series is ultra small highly accurate voltage detector with delay circuit built-in. The device includes a highly accurate reference voltage source, manufactured using CMOS process technology and laser
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XC6127
ETR0217-007
800ms.
XC6127N
XC6127C
433k u
XC6127N15A
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Untitled
Abstract: No abstract text available
Text: M O S E L V ITELIC V 54C31732G 2V H IG H P ER FO R M A N C E 166/143 M H z 3.3 VOLT EN HA N CED G R A PHICS 512K X 32 S D R A M 2 BANKS X 256K bit X 32 V54C31732G2V P R E LIM IN A R Y -6 -7 -8 -10 Unit 166 143 125 100 MHz Latency 3 3 3 3 clocks Cycle Tim e tc«
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54C31732G
V54C31732G2V
V54C31732G2V
100-pin
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5A1 equivalent SMD
Abstract: qml-38535 GDFP1-F48 9A248 marking 6a2 smd
Text: REVISIONS DESCRIPTION LTR DATE APPROVED YR-MO-DA REV SHEET REV SHEET 15 REV STATUS OF SHEETS REV SHEET PM IC N/A STANDARD M ICRO CIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 1 2 3 4 5 PREPARED BY
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18-BIT
5962-E101-96
QML-38535.
QML-38535
MIL-HDBK-103.
MIL-HDBK-103
5A1 equivalent SMD
GDFP1-F48
9A248
marking 6a2 smd
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4A60
Abstract: A1Z P 73fo 3C70 73E0 1B80 5G10 din 5480 s170 D-10
Text: MIL-M-38510/224 9 JUNE 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 262,144 B IT , MOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY EPROM MONOLITHIC SILICON T h is s p e c if ic a t io n i s approved fo r use by a l l Depart ments and Agencies of the Department o f Defense.
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MIL-M-38510/224
MIL-M-38510,
MIL-M-38510
MIL-M-38510.
L-M-38510/224
704-036/4S467
4A60
A1Z P
73fo
3C70
73E0
1B80
5G10
din 5480
s170
D-10
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qml-38535
Abstract: CQCC1-N20 GDFP2-F20
Text: REVISIONS ! DESCRIPTION LTR DATE YR-MO-DA APPROVED j \ REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PM IC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 1 2
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5962-E284-96
QML-38535.
QML-38535
MIL-HDBK-103.
MIL-HDBK-103
CQCC1-N20
GDFP2-F20
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54C906
Abstract: 54C906 similar ELITE EY MM54C906F
Text: This Material Copyrighted By Its Respective Manufacturer r SCOPE 1.1 Scooe. .This drawing describes the requirements for monolithic s ilic o n , d ig it a l, CJIOS buffers This drawing provides for a level of m icro c irc u it q u ality and r e l i a b i lit y assurance for procurement
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MIl-M-38510.
54C306
MIL-M-38510,
54C906
54C906 similar
ELITE EY
MM54C906F
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5962-9752701Q3A
Abstract: qml-38535
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 5 4 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE
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10-BIT
GG470Ã
5962-9752701Q3A
qml-38535
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Untitled
Abstract: No abstract text available
Text: ThomasiBetts Barrier Strips Dual Barriers 0.4375" PITCH SERIES SSB7 Physical P roperties H ousing Material: Polypropylene Flammability: UL94V-2 C olor: Black T erminal T erminals: Brass, bright acid tin over copper plat ing S crew: Steel with zinc + chromate plating
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UL94V-2
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A ^ |r p 2 1
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5962-E1355-5
5962-8970701EX
CD54HCT162F/3A
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