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    IC NOT GATE DATA SHEET Search Results

    IC NOT GATE DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IC NOT GATE DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    igbt ignition

    Abstract: IR21571 IR21571PBF ignition IGBTS C 12 PH zener diode datasheet diode led uv electronic ballast ignition timing IRF 450 MOSFET Sd pcb
    Text: Data Sheet PD No. 60179 revM Not recommended for new design: please use IRS21571D IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC


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    IRS21571D IR21571 150uA) 16-Lead IR21571 IR21571S IR21571S igbt ignition IR21571PBF ignition IGBTS C 12 PH zener diode datasheet diode led uv electronic ballast ignition timing IRF 450 MOSFET Sd pcb PDF

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    Abstract: No abstract text available
    Text: Data Sheet PD No. 60179 revM Not recommended for new design: please use IRS21571D IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC


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    IRS21571D IR21571 150uA) 16-Lead IR21571 IR21571S IR21571S PDF

    IRS21850

    Abstract: irs21851 IRS21851SPbF MS-012AA n channel mosfet marking 3B ST Transient Voltage Supp IRS21851STRPBF 010a
    Text: Data Sheet PD No. 60255 revA Not recommended for new design: please use IRS21850 IRS21851SPbF SINGLE HIGH SIDE DRIVER IC Features • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for VBS and V CC • 3.3 V and 5 V input logic compatible


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    IRS21850 IRS21851SPbF IRS21851 IRS21851STRPbF IRS21850D" 160ns 170ns IRS21850 IRS21851SPbF MS-012AA n channel mosfet marking 3B ST Transient Voltage Supp IRS21851STRPBF 010a PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH40TS65 O-247N R1102A PDF

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    Abstract: No abstract text available
    Text: RGTH40TS65 Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH40TS65 O-247 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH00TS65 Data Sheet 650V 50A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 50A VCE(sat) (Typ.) 1.6V PD 277W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH00TS65 O-247 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH80TS65 Data Sheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 40A VCE(sat) (Typ.) 1.6V PD 234W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH80TS65 O-247N R1102A PDF

    RGTH50TS65

    Abstract: No abstract text available
    Text: RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH50TS65 O-247 R1102A RGTH50TS65 PDF

    RGT80TS65D

    Abstract: No abstract text available
    Text: RGT80TS65D Data Sheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 40A VCE(sat) (Typ.) 1.65V PD 234W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


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    RGT80TS65D O-247N R1102A RGT80TS65D PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH80TS65 Data Sheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 40A VCE(sat) (Typ.) 1.6V PD 234W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH80TS65 O-247 R1102A PDF

    RGTH60TS65

    Abstract: No abstract text available
    Text: RGTH60TS65 Data Sheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 30A VCE(sat) (Typ.) 1.6V PD 194W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH60TS65 O-247 R1102A RGTH60TS65 PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH50TS65 O-247N R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH00TS65 Data Sheet 650V 50A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 50A VCE(sat) (Typ.) 1.6V PD 277W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH00TS65 O-247N R1102A PDF

    RGTH60TS65

    Abstract: No abstract text available
    Text: RGTH60TS65 Data Sheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 30A VCE(sat) (Typ.) 1.6V PD 194W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH60TS65 O-247N R1102A RGTH60TS65 PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH40TS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.6V PD 144W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH40TS65D O-247N RGTH40TS65th R1102A PDF

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    Abstract: No abstract text available
    Text: RGT40NS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 161W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


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    RGT40NS65D O-263S) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH50TS65D O-247N RGTH50TS65th R1102A PDF

    RGT16NS65D

    Abstract: No abstract text available
    Text: RGT16NS65D Data Sheet 650V 8A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 8A VCE(sat) (Typ.) 1.65V PD 94W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


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    RGT16NS65D O-263S) R1102A RGT16NS65D PDF

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    Abstract: No abstract text available
    Text: RGT80TS65D Data Sheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 40A VCE(sat) (Typ.) 1.65V PD 234W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


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    RGT80TS65D O-247 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH60TS65D Data Sheet 650V 30A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 30A VCE(sat) (Typ.) 1.6V PD 194W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH60TS65D O-247N RGTH60TS65th R1102A PDF

    RGT50TS65D

    Abstract: No abstract text available
    Text: RGT50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.65V PD 174W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


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    RGT50TS65D O-247 R1102A RGT50TS65D PDF

    Untitled

    Abstract: No abstract text available
    Text: RGTH80TS65D Data Sheet 650V 40A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 40A VCE(sat) (Typ.) 1.6V PD 234W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH80TS65D O-247N RGTH80TS65th R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RGT50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.65V PD 174W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss


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    RGT50TS65D O-247N R1102A PDF

    RGTH00TS65D

    Abstract: RGTH00TS65
    Text: RGTH00TS65D Data Sheet 650V 50A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 50A VCE(sat) (Typ.) 1.6V PD 277W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching


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    RGTH00TS65D O-247 RGTH00TS65Dth R1102A RGTH00TS65D RGTH00TS65 PDF