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    IC PT 2222 Search Results

    IC PT 2222 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    IC PT 2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic pt 2223

    Abstract: ic pt 2222 npn 2222 transistor UN2224 UN2221 UN2222 UN2223 DSA003713 Pt 2222
    Text: Transistors with built-in Resistor UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 Costs can be reduced through downsizing of the equipment and reduction of the number of parts.


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    PDF UN2221/2222/2223/2224 ic pt 2223 ic pt 2222 npn 2222 transistor UN2224 UN2221 UN2222 UN2223 DSA003713 Pt 2222

    ic pt 2223

    Abstract: UNR2223 UNR2221 UNR2222 UNR2224
    Text: Transistors with built-in Resistor UNR2221/2222/2223/2224 UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 For digital circuits 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 3 0.4 –0.05 2.9 –0.05 1 0.95


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    PDF UNR2221/2222/2223/2224 UN2221/2222/2223/2224) ic pt 2223 UNR2223 UNR2221 UNR2222 UNR2224

    ic pt 2223

    Abstract: ic pt 2222 UN2224 UNR2223 UN2221 UN2222 UN2223 UNR2221 UNR2222 UNR2224
    Text: Transistors with built-in Resistor UNR2221/2222/2223/2224 UN2221/2222/2223/2224 Silicon NPN epitaxial planer transistor Unit : mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


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    PDF UNR2221/2222/2223/2224 UN2221/2222/2223/2224) UNR2221 UNR2222 UNR2223 UNR2224 ic pt 2223 ic pt 2222 UN2224 UNR2223 UN2221 UN2222 UN2223 UNR2221 UNR2222 UNR2224

    2222A

    Abstract: O A B C sot-89 WTM2222A WTM2907A 2222A sot89 transistor 2222a transistor 2222a sot 89
    Text: WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 Features: 1. BASE 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With PNP Type WTM2907A 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


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    PDF WTM2222A OT-89 WTM2907A 100ms 06-Apr-06 OT-89 2222A O A B C sot-89 WTM2222A WTM2907A 2222A sot89 transistor 2222a transistor 2222a sot 89

    2222a

    Abstract: WTM2222A WTM2907A transistor 2222a
    Text: WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 Features: 1. BASE 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C)


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    PDF WTM2222A OT-89 WTM2907A 100ms 06-Apr-06 OT-89 2222a WTM2222A WTM2907A transistor 2222a

    PC7812AHF

    Abstract: PC7805AHF pc7815ahf IC-7983 PC7800 PC7824AHF PC7893AHF PC7805A PC7818AHF
    Text: データ・シート バイポーラアナログ集積回路 Bipolar Analog Integrated Circuit µPC7800Aシリーズ 3端子正出力電圧安定化電源回路 PC7800Aシリーズは,出力電流容量1Aの正出力電圧3端子レギュレータです。


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    PDF PC7800A PC7800A1A PC7800 TA-30 mAPC7805AHF VPC7805AHF PC7808AHF PC7893AHF PC7812AHF PC7805AHF pc7815ahf IC-7983 PC7800 PC7824AHF PC7893AHF PC7805A PC7818AHF

    transistor C017

    Abstract: D1560 transistor t 2190 2SD2164
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SD2164 NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅,低速度スイッチング用 2SD2164 は,hFE が特に高くなるように設計されたシングルの


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    PDF 2SD2164 2SD2164 D15606JJ3V0DS transistor C017 D1560 transistor t 2190

    2SC1505 K

    Abstract: 2SC1505 k1982 MP-25 tc5084 tc5084b
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC1505 NPN 三重拡散形シリコン・トランジスタ カラー・テレビ・クロマ出力,音声出力用 ★ 2SC1505 は,高耐圧かつ高周波特性にすぐれており,カラー・


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    PDF 2SC1505 O-220AB O-220AB) D14860JJ3V0DS00 TC-5084B October2000 2SC1505 K 2SC1505 k1982 MP-25 tc5084 tc5084b

    31-968.24

    Abstract: 22-331.111d 22-040.001 311D 514D 22-223.011 10-5309.3205 31-968.05 Flat Plate power Resistor elements 222120
    Text: Switches and Indicators 22 22 Switches and Indicators Index Series 22 Description Page 369 Product Assembly Page 370 Product Range - pushbuttons for standard mounting - accessories / spare parts 368 01.2000 Page 371 Page 375 Technical Data Page 380 Technical Drawing / Dimension


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    2SC4226

    Abstract: pt 2399 PA810T
    Text: データ・シート(暫定) シリコントランジスタ Silicon Transistor µPA810T NPNエピタキシアル形シリコントランジスタ(2素子内蔵) 高周波低雑音増幅用 2SC4226 2個入り小形ミニモールド PA810Tは,VHF帯からUHF帯での低雑音増幅用として


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    PDF PA810T 2SC4226 PA810TVHFUHF PA810T-T1 2SC4226 pt 2399 PA810T

    d1499

    Abstract: AA 6026
    Text: データ・シート 複合トランジスタ Compound Transistor FN1F4N 抵抗内蔵PNPエピタキシアル形シリコントランジスタ 中速度スイッチング用 特 徴 外形図(単位:mm) ○バイアス抵抗を内蔵しています。


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    PDF Cycle50 D14992JJ2V0DS002 TC-6026 D14992JJ2V0DS00 d1499 AA 6026

    K1983

    Abstract: 2SA1129 2SC2654 MP-25 D1485 2sa112
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SA1129 PNP エピタキシアル形シリコン・トランジスタ 低周波電力増幅および中速度スイッチング用 工業用 ★ 2SA1129 は,中速度スイッチング用として開発されたモール


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    PDF 2SA1129 O-220AB O-220AB) 2SC2654 D14856JJ2V0DS00 TC-5552 October2000 K1983 2SA1129 2SC2654 MP-25 D1485 2sa112

    transistor 6108

    Abstract: 2SC4342
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC4342 NPN エピタキシアル形シリコン・トランジスタ ダーリントン接続 高速度スイッチング用 工業用 ★ 2SC4342 は,高速タイプのダーリントン・パワー・トランジ


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    PDF 2SC4342 O-126 D14862JJ2V0DS00 TD-7566 June2001 D14862JJ2V0DS transistor 6108 2SC4342

    2SB1432

    Abstract: 2SB143
    Text: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SB1432 PNP エピタキシアル形シリコン・トランジスタ ダーリントン接続 低周波電力増幅,低速度スイッチング用 工業用 ★


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    PDF 2SB1432 2SB1432 O-220 O-220) D14859JJ2V0DS00 TD-7620 November2000 2SB143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 2907 SMBT 2907 A PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration


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    PDF Q68000-A6501 Q68000-A6474 OT-23 0535bQ5 012S531 235bQ5 D122532

    2907A

    Abstract: ZT2907A mdpv
    Text: SIEM EN S PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 N PN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Conf igura ion


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    PDF Q62702-Z2028 Q62702-Z2025 OT-223 2907A ZT2907A mdpv

    transistor 2222a

    Abstract: k019 2222A transistor M2907A 2222a tm2907 2222A transistors ip 2222A
    Text: SEC SILICON TRANSISTORS ELECTRON DEVICE N T M 2 2 2 2 A ,N T M 2 2 2 2 A R GENERAL PURPOSE AMPLIFIER, HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR "M INI MOLD TYPE” DESCRIPTION The N TM 2222A , N TM 2222A R are designed fo r general purpose am p lifie r and high speed sw itching applications, especially


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    PDF

    t2222

    Abstract: NT2222 NT2222A I/NT2222 NT2907 t2222a ICB01
    Text: NEC NPN SILICON TRANSISTORS NT2222,NT2222A ELECTRON DEVICE GENERAL PU RPO SE A M P L IF IE R A N D H IG H -S P E E D , M E D IU M -P O W E R S W IT C H IN G N P N S IL IC O N E P IT A X IA L T R A N S IS T O R DESCRIPTION The N T2222, N T 2222A are NPN transistors, designed fo r general purpose am plifier and high-speed, mediumpower sw itching applications, feature injection-m olded plastic package fo r high re lia b ility .


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    PDF NT2222 NT2222A T2222, T2907, T2907A T2222A t2222 NT2222A I/NT2222 NT2907 ICB01

    G2JS

    Abstract: 2SC4550 Immo transistor t 2190 U/25/20/TN26/15/850/G2JS
    Text: ~r — $ • y — h /\°7 - Silicon Power Transistor 2SC4550 N 2 S C 455o iî , i i i i x - f P N I f c - v i - v - r m ÿ X j ' t ' L ow VcE sat Iife i ^ t L v x m T . i l ' J f i ÿ y ì i i i i r t z ' - t v - h \ - 7 7 > ' / X > m ^iO T" D C /D C ^ > /S;'— Ÿ ^?~T y7


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    PDF 2SC4550 2SC4550 PWS300 D15596JJ2V0DS00 G2JS Immo transistor t 2190 U/25/20/TN26/15/850/G2JS

    K68A

    Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
    Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E


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    PDF SC-59 DO-35 SC-63) T0-220AB K68A a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557

    transistor 5bw

    Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
    Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>


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    PDF 2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave

    2n5088 transistor

    Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS DRAWING 0 RELEASED FOR P U B L I C A T IO N IS UNPUBLISHED. COPYRIGHT BY AMP INCORPORATED. 19 2 3 ,1 9 LOC DI ST CF ALL RIGHTS RESERVED. REVISIONS 39 DES C RI PT IO N DATE DWN APVD PER NPR 11-20-96 DKE RC 0G80—0 0 3 7 -0 0 1- 2 8 - 0 0 REH REH


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    PDF 0G80--0 17105-3b0 amp40989 /home/arfip40989/edmrnod

    BLW90

    Abstract: fi37
    Text: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


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    PDF BLW90 BLW90 fi37