fuji ipm
Abstract: 7MBP75RE120 hcpl 0350 AC2500 HCPL-4504 diode S6M
Text: SPECIFICATION D e v ic e N a m e : IG B T -IP M Type S pec. Nam e N o. 7M BP75R E1 20 ; M S6M 0350 F u ji E le c t r ic C o . , L td . M a ts u m o to DATE H DRAWN i CHECKED ! NAME F a c to r y APPROVED Fuji E le ctric Co.,Ltd. Jarf C i Ya.maqacl i .i *]_ O u J lilM )
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16-n0.
7MBP75RE120
fuji ipm
7MBP75RE120
hcpl 0350
AC2500
HCPL-4504
diode S6M
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MG75G2CL1
Abstract: MG75G2cl1 toshiba 68Q5 A649
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75G2CL1 Unit in mm 5-Mi 2-05.3ÍO.3 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. o . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.
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MG75G2CL1
2-68A1A
MG75G2CL1
MG75G2cl1 toshiba
68Q5
A649
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Untitled
Abstract: No abstract text available
Text: f M ITSUBISHI TRAN SISTOR M O D U LES ! QM75E2Y/E3Y-H | HIGH POWER SWITCHING USE Í _INSULATED TYPE j QM75E2Y/E3Y-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 600V
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QM75E2Y/E3Y-H
E80276
E80271
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2DI75D-050A
Abstract: DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT
Text: 2DI75D-050A 75a /<7- -)V POWER TRANSISTOR MODULE i F e a tu re s • 7 'J — • h F E ^ ftt' •m m X — KF*3W Including Free Wheeling Diode High DC Current Gain Insulated Type If f liÉ : A p p lic a t io n s • High Power Switching • AC i AC Motor Controls
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2DI75D-050A
E82988
DIODE B93
B-93
H125
M208
gip transistor
b93 diode
YSTT
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Untitled
Abstract: No abstract text available
Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG75H6EL1
Ic-75A)
Icm75A)
MG75H6EL1-1
MG75H6EL1-4
MG150Q2YK1
MG200Q1UK1
MG75Q2YK1
MG50Q2YK1
10Sec.
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MG75G2cl1 toshiba
Abstract: MG75G2CL1
Text: TOSHIBA {DISCRETE/OPTO} TO .DE | ^0^7550 DDlbE37 T 90D 16237 9097250 TOSHIBA DISCRETE/OPTO • SEMICONDUCTOR , MG75G1JL1 MG75G2CL1 MG75G2DL1 TECHNICAL DATA MG75G1JL1 Weight : 205g MG75G2CL1 El C3 MG75G2DL1 Height : 245g ST 1 A 2 A TOSHIBA CORPORATION - 243 -
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DDlbE37
MG75G1JL1
MG75G2CL1
MG75G2DL1
DT-33
MG75G2cl1 toshiba
MG75G2CL1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750
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QM75DY-HB
QNI750Y-HB
E80276
E80271
QM75DY-HB
15QmAIS
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fuji ipm
Abstract: fuji electric ipm 4504 opto kic 125 6MBP75NA060-01 optocoupler 1g Hpcl
Text: SPECIFICATION Device Name : I G B T - 1P M Tyoo Name : 6 M B P7 5 N A 060-0 1 Spec No. : M S6 M0276 F u ji E lectric C o .L td . Matsumoto Factory DATE AWN XFD NAME APPROVED Fuji Electric Co.,Ltd. n-XtiLJkiJhi •/. • o ¿C M Û S 6 M 2 7 6 w i s H04-004-07
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6MBP75NA060-0
MS6M0276
H04-004-07
H04-004-05
H04-C04-03
H040040;
HCPL-4504)
HPCL-4S04)
fuji ipm
fuji electric ipm
4504 opto
kic 125
6MBP75NA060-01
optocoupler 1g
Hpcl
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6MBP75RU2A120
Abstract: fuji ipm AC2500 H04-004 HCPL-4504 tj0-h ns package number h03a 2-pin 6mbp75ru2 01049
Text: This m aterial and the inform ation herein is the p ro p e rty o f Fuji E le ctric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, o r disclosed in any w ay whatsoever for the use o f any third party nor used fo r the m anufacturing purposes w ithou t the express w ritte n consent of
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H04-004-03a
6MBP75RU2A120
fuji ipm
AC2500
H04-004
HCPL-4504
tj0-h
ns package number h03a 2-pin
6mbp75ru2
01049
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T1EB
Abstract: 125CV 2DI75Z-100 30S3 T930 2di75z100 OA9 diode
Text: 2DI75Z-100 75a ' U ± y < r7 - ^ 3 . - ) V : Outline Drawings POW ER TRAN SISTO R MODULE F e a tu re s • ffiifiS High Voltage • 7 V— V — K rtj • A S O A '& i' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications
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2DI75Z-100
095t/R89
T1EB
125CV
30S3
T930
2di75z100
OA9 diode
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qm75ha-h
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES j I QM75HA-H | HIGH POWER SWITCHING USE ! INSULATED TYPE j QM75HA-H • Ic • V cex • hFE Collector current. 75A Collector-emitter voltage. 6 0 0 V DC current gain. 75
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QM75HA-H
E80276
E80271
qm75ha-h
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TO DT-33'30" 90D 16242 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA DE I TDTTSSD O O l t ^ a 2 SEMICONDUCTOR TOSHIBA GTR MODULE MG75G6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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DT-33
MG75G6EL1
10-FAST-QN-TAB
Ic-75A)
MG75C6EL1-4
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Mitsubishi transistor
Abstract: mitsubishi servo power module
Text: MITSUBISHI TRANSISTOR MODULES QM75DY-H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-H • • • • • lc Collector current. 75A V cex Collector-emitter voltage. 600V hFE DC current gain.75
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QM75DY-H
E80276
E80271
Mitsubishi transistor
mitsubishi servo power module
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Untitled
Abstract: No abstract text available
Text: P O W E R E X INC m N B'lE » E N E • 72^21 0D0431G 1 * P R X _ X T - 3 3 - .S £ r K T524575 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 75697 412 925-7272 S p l it - D u a l D a r lin g t o n Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14
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0D0431G
T524575
BP107,
Amperes/600
KT524575
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