Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory
|
Original
|
PDF
|
AMP366P1623BTE-C75/H
AMP366P1623BTE-C75/H
400mil
168-pin
168-pin6
100MHz
PC100
|
ICC1-100
Abstract: ICC150
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 02. Inactivate device type 01 (no approved source of supply). Add device types 03 through 07. Add vendors CAGE 32116, 5Y243, 57363, and 88379. Changed to reflect MIL-H-38534 processing. Editorial changes throughout.
|
Original
|
PDF
|
5Y243,
MIL-H-38534
8K957.
5962-R189-92.
5962-R110-94.
5962-R013-96.
5962-R110-94
5962ents
U4388
ICC1-100
ICC150
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN6497B Monolithic Digital IC High-Speed CD-ROM LB11975 Spindle Motor Driver IC Overview The LB11975 is a monolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and DVD-ROM drives. To minimize heat generation during high-speed rotation and braking, the LB11975 adopts direct PWM
|
Original
|
PDF
|
EN6497B
LB11975
LB11975
|
PC437
Abstract: CU24063-Y1A PC860 DS-1552-0001-01 noritake itron CU24063
Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24063-Y1A Specification No: DS-1552-0001-01 Date of Issue: December 5, 2008 00 Revision: December 17, 2008 (01) Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp
|
Original
|
PDF
|
2002/95/EC
CU24063-Y1A
DS-1552-0001-01
DS-1552-0001-00
PC437
CU24063-Y1A
PC860
DS-1552-0001-01
noritake itron
CU24063
|
YL303H
Abstract: electric power saver circuits NORITAKE ITRON VFD MODULES 96 x 23 CU24043-Y100 PC858 font display vfd PC437 140CD Receipt font Noritake FONT TABLE
Text: RoHS 2002/95/EC Vacuum Fluorescent Display Module Specification Model: CU24043-Y100 Specification No: DS-1570-0001-00 Date of Issue: January 29, 2009 00 Revision: Published by NORITAKE ITRON CORP. / Japan http://www.noritake-itron.jp This specification is subject to change without prior notice.
|
Original
|
PDF
|
2002/95/EC
CU24043-Y100
DS-1570-0001-00
YL303H
electric power saver circuits
NORITAKE ITRON VFD MODULES 96 x 23
CU24043-Y100
PC858 font
display vfd
PC437
140CD
Receipt font
Noritake FONT TABLE
|
7106
Abstract: fgs npn LB11823M
Text: Ordering number : ENN7106 Monolithic Digital IC LB11823M Direct PWM Drive Brushless Motor Predriver for OA Products Overview Package Dimensions The LB11823M is a direct PWM drive predriver IC for use with three-phase power brushless motors. The LB11823M can implement a motor drive circuit with the
|
Original
|
PDF
|
ENN7106
LB11823M
LB11823M
3129-MFP36SD
LB11823M]
45max
7106
fgs npn
|
Untitled
Abstract: No abstract text available
Text: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F800B5 MT28F008B5 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 5 technology (B5):
|
Original
|
PDF
|
MT28F800B5
MT28F008B5
16KB/8K-word
MT28F800B5,
8/512K
40-Pin
48-Pin
44-Pin
|
Untitled
Abstract: No abstract text available
Text: 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY MT28F200B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • SmartVoltage Technology (SVT):
|
Original
|
PDF
|
16KB/8K-word
110ns
MT28F200B1
44-Pin
|
Hitachi DSA00164
Abstract: HM5165805TT5
Text: HM5164805 Series HM5165805 Series 64 M EDO DRAM 8-Mword x 8-bit 8 k Refresh/4 k Refresh ADE-203-808B (Z) Rev. 1.0 Feb. 27, 1998 Description The Hitachi HM5164805 Series, HM5165805 Series are 64M-bit dynamic RAMs organized as 8,388,608word × 8-bit. They have realized high performance and low power by employing CMOS process
|
Original
|
PDF
|
HM5164805
HM5165805
ADE-203-808B
64M-bit
608word
32-pin
Hitachi DSA00164
HM5165805TT5
|
CC1H2,5
Abstract: SAF-C509-LM CMH1.5 icc17 80C517A CC1H4 SAB-C509-LM 80C517 CT1F CT1R
Text: Microcomputer Components 8-Bit CMOS Microcontroller C509-L Data Sheet 09.96 C509-L 8-Bit CMOS Microcontroller C509-L Advance Information • • • • • • • • • • • • • Full upward compatibility with SAB 80C517/80C517A and 8051/C501 microcontrollers
|
Original
|
PDF
|
C509-L
80C517/80C517A
8051/C501
16-MHz
16-bit
CC1H2,5
SAF-C509-LM
CMH1.5
icc17
80C517A
CC1H4
SAB-C509-LM
80C517
CT1F
CT1R
|
Untitled
Abstract: No abstract text available
Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks
|
Original
|
PDF
|
MT28F004B5
MT28F400B5
40-Pin
48-Pin
16KB/8K-word
MT28F400B5,
16/512K
MT28F004B5,
|
CT1F
Abstract: smd transistor c009 8051-UART smd diode s6 43a smd transistor c006 PLM51 SAB-C500 CC1H4 SAB-C509 tx c509
Text: C509-L ht User's Manual 11.97 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller C509-L Data Sheet Revision History : 11.97 Previous Releases : 06.96 Original Version Page (new version) Page (prev. Subjects (changes since last revision)
|
Original
|
PDF
|
C509-L
C509-L
to11-9
CT1F
smd transistor c009
8051-UART
smd diode s6 43a
smd transistor c006
PLM51
SAB-C500
CC1H4
SAB-C509
tx c509
|
Hitachi DSA0088
Abstract: HM51 HM51W4800C
Text: HM51W4800A/AL Series HM51W4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory The Hitachi HM51W4800A/AL, HM51W4800C/ CL are CMOS dynamic RAM organized as 524,288-word x 8-bit. HM51W4800A/AL have realized higher density, higher performance and
|
Original
|
PDF
|
HM51W4800A/AL
HM51W4800C/CL
288-word
HM51W4800A/AL,
HM51W4800C/
W4800A/AL,
Hitachi DSA0088
HM51
HM51W4800C
|
LVT2952
Abstract: SN54LVT2952 SN74LVT2952
Text: SN54LVT2952, SN74LVT2952 3.3-V ABT OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS S CBS152C - MAY 1992 - REVISED FEBRUARY 1994 SN54LVT2952 . . . JT PACKAGE SN74LVT2952 . . . DB, DW, OR PW PACKAGE TOP VIEW State-of-the-Art Advanced BICMOS Technology (ABT) Design for 3.3-V
|
OCR Scan
|
PDF
|
SN54LVT2952,
SN74LVT2952
SCBS152C
MIL-STD-883C,
JESD-17
LVT2952
SN54LVT2952
|
|
|
Untitled
Abstract: No abstract text available
Text: September 1994 Preliminary Commercial INC. PEEL 22CV8 -15/-25 CMOS Programmable Electrically Erasable Logic Device Features Low Power Alternative to Standard PLDs — Lower power than quarter-power PALs and GALs — 10mA typical/15mA maximum power CMOS Electrically Erasable Technology
|
OCR Scan
|
PDF
|
22CV8
typical/15mA
24-pin
PEEL18CV8
2400bps,
|
Untitled
Abstract: No abstract text available
Text: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 Jim CMOS process
|
OCR Scan
|
PDF
|
HM514170C
HM51S4170C
144-word
16-bit
4170C
16-bit.
|
Untitled
Abstract: No abstract text available
Text: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance
|
OCR Scan
|
PDF
|
HM51W16160A
HM51W18160A
1048576-word
16-bit
ADE-203-217B
576-word
16-bit.
|
Untitled
Abstract: No abstract text available
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended
|
OCR Scan
|
PDF
|
HM5118165B
1048576-word
16-bit
ADE-203-000
576-word
16-bit.
ns/70
ns/80
|
m5165
Abstract: No abstract text available
Text: HM5164805A Series HM5165805A Series 64M EDO DRAM 8-Mword x 8-bit 8k refresh/4k refresh HITACHI ADE-203-458B (Z) Rev. 2.0 Oct. 30, 1997 Description The Hitachi HM5164805A Series, HM5165805A Series are CMOS dynamic RAMs organized 8,388,608word X 8-bit. They employ the most advanced CMOS technology for high performance and low power.
|
OCR Scan
|
PDF
|
HM5164805A
HM5165805A
ADE-203-458B
608word
400-mil
32-pin
m5165
|
6AL7
Abstract: Nippon capacitors
Text: HB56UW865DB Series 8388608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-665A Z Rev. 1.0 May 20, 1997 Description The HB56UW865DB Series is a 8 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O. DIMM), mounted 8 pieces of 64-Mbit DRAM (HM5165805 ATT/ALTT) sealed in TSOP package and 1
|
OCR Scan
|
PDF
|
HB56UW865DB
8388608-word
64-bit
ADE-203-665A
64-Mbit
HM5165805
24C02)
6AL7
Nippon capacitors
|
Untitled
Abstract: No abstract text available
Text: HM5164405A Series HM5165405A Series 64M EDO DRAM 16-Mword x 4-bit 8k refresh/4k refresh HITACHI ADE-203-459B (Z) Rev. 2.0 Oct. 28, 1997 Description The Hitachi HM5164405A Seiies, HM5165405A Series are CMOS dynamic RAMs organized 16,777,216word X 4-bit. They employ the most advanced CMOS technology for high performance and low power.
|
OCR Scan
|
PDF
|
HM5164405A
HM5165405A
16-Mword
ADE-203-459B
216word
400-mil
32-pin
|
Untitled
Abstract: No abstract text available
Text: ADVANCE .1 MT28LF400 256K x 16, 512K x 8 FLASH MEMORY MICRON •- OUAMTUU o c v tc s a . INC 256K x 16, 512K x 8 3.3V/12V, BOOT BLOCK FEATURES • Seven erase blocks: - 16K B /8K -w ord boot block protected - T w o 8K B/ 4K -w ord param eter blocks - Four general m em ory blocks
|
OCR Scan
|
PDF
|
MT28LF400
V/12V,
100ns,
120ns
16-bit
001CH23
|
Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 1 MT28SF200 128K x 16, 256K x 8 FLASH MEMORY FLASH MEMORY 128K x 16,256K x 8 — FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|_iA at 5V Vcc; 2|iA at
|
OCR Scan
|
PDF
|
MT28SF200
16KB/8K-word
100ns
110ns,
150ns
072x16
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):
|
OCR Scan
|
PDF
|
MT28F800B1
16KB/8K-word
100ns
110ns,
150ns
48-PIN
0020bfl2
80-PIN
|
