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    ID100 DUAL DIODE Search Results

    ID100 DUAL DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ID100 DUAL DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UNION CARBIDE

    Abstract: No abstract text available
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS Crss = 0.75pF 1 ID100 ID101 TO-78 TOP VIEW


    Original     		PDF ID100 ID101 ID100 300mW 25-year-old, UNION CARBIDE

    diode reverse voltage protection

    Abstract: ID100 ID-100
    Text: ID100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID100 The ID100 is a low leakage Monolithic Dual Pico-Amp Diode The ID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology


    Original     		PDF ID100 ID100 diode reverse voltage protection ID-100

    transistor 2N4393

    Abstract: Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW


    Original     		PDF ID100 ID101 ID100 ID101 300mW transistor 2N4393 Dual Amplifier Transistor intersil dual JFET P-Channel Depletion Mode FET intersil JFET high voltage pnp transistor 2N4392 smt a1 transistor NPN

    ID100

    Abstract: 2N4393 Direct Replacement INTERSIL TO-78 2N4117A ID101 OP-27 PA 0016
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V REVERSE CAPACITANCE Crss = 0.75pF ID100 ID101 TO-78 BOTTOM VIEW


    Original     		PDF ID100 ID101 ID100 300mW ID101 2N4393 Direct Replacement INTERSIL TO-78 2N4117A OP-27 PA 0016

    id100

    Abstract: No abstract text available
    Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS


    Original     		PDF ID100 ID101 ID100 300mW 25-year-old,

    transistor j511

    Abstract: ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode
    Text: J500 SERIES CURRENT REGULATING DIODES Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V A A K K 1 ABSOLUTE MAXIMUM RATINGS TO-92 BOTTOM VIEW @ 25 °C unless otherwise stated


    Original     		PDF 360mW transistor j511 ls n channel jfet Siliconix Dual N-Channel JFET Transistor J310 TRANSISTOR 2n3955 zener zd 31 P-Channel Depletion Mode FET IT132 ID100 dual diode

    smt a1 transistor

    Abstract: smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix
    Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES Linear Integrated Systems FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF ABSOLUTE MAXIMUM RATINGS1 DPAD DPAD1 TO-72 BOTTOM VIEW TO-78


    Original     		PDF 500mW smt a1 transistor smt a1 transistor NPN J507 Replacement n channel 2n4393 2n4416 transistor spice jfet photo diode u406 type u405 siliconix

    TO72 package n-channel jfet

    Abstract: PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500
    Text: PAD SERIES PICO AMPERE DIODES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE BVR ≥ -30V PAD1,2,5 PAD* Crss ≤ 2.0pF TO-72 BOTTOM VIEW TO-72 BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1


    Original     		PDF 300mW 350mW OT-23 TO72 package n-channel jfet PAD1 Spice transistor 2N4393 ls n channel jfet jfet j112 u406 type 2N5019 "direct replacement" J201 Replacement JPAD500

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    2sk170 spice

    Abstract: j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 LSK389 400mW -500pA 2SK170 OT-23 2sk170 spice j310 replacement replacement 2sk170 J201 Replacement LSK170A 2sk170 FET fet j310 Ultra High Input Impedance N-Channel JFET Amplifier ultra Low noise FET DIODE A6

    N-Channel jfet 100V depletion

    Abstract: transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature


    Original     		PDF LS320 200mW N-Channel jfet 100V depletion transistor j113 15 A PNP POWER TRANSISTOR P-Channel FET 100v to92 Ultra High Input Impedance N-Channel JFET Amplifier Dual N P-Channel 100V P-Channel JFET Switch

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


    Original     		PDF SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		PDF LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice

    ultra low igss pA mosfet

    Abstract: J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor
    Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW GATE LEAKAGE IG = 15pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -65 to +150 °C


    Original     		PDF LS846 LS843 350mW ultra low igss pA mosfet J506 equivalent jfet n channel ultra low noise "N-Channel JFET" "Dual PNP Transistor" transistor j201 Dual N-Channel JFET super beta transistor jpad100 ultra low noise transistor

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


    Original     		PDF 100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent

    lateral mosfet audio amplifier

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier JFET APPLICATIONS J201 N-channel JFET super beta transistor N CHANNEL jfet ultra Low Noise Audio Amplifier diode ZENER A8 sd211de spice J201 spice depletion n-channel mosfet to-92
    Text: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage


    Original     		PDF SD-SST211/213/215 SD211DE/SST211 lateral mosfet audio amplifier N CHANNEL jfet Low Noise Audio Amplifier JFET APPLICATIONS J201 N-channel JFET super beta transistor N CHANNEL jfet ultra Low Noise Audio Amplifier diode ZENER A8 sd211de spice J201 spice depletion n-channel mosfet to-92

    zener sot-23 a9

    Abstract: JFET 50ma -40v jfet to 92 SST204
    Text: J/SST201 SERIES HIGH GAIN N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS off ≤ 1.5V HIGH GAIN AV = 80 V/V 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) J SERIES Maximum Temperatures


    Original     		PDF J/SST201 350mW OT-23 zener sot-23 a9 JFET 50ma -40v jfet to 92 SST204

    VCR11N

    Abstract: fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511
    Text: VCR11N N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE 100 to 200Ω 1 ABSOLUTE MAXIMUM RATINGS TO-71 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF VCR11N VCR11N 300mW fet j310 surface mount pico-amp diode j510 high voltage pnp transistor SST511

    U402 N CHANNEL FET

    Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
    Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF LS627 FF627 400mW U402 N CHANNEL FET P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		PDF LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel

    1D100

    Abstract: ID100 ID101 XID100 XID101
    Text: CALOGIC CORP i+flE D 10*44322 0 0 0 0 3 5 b 7 «CGC 0ual LowLeakaSe " " T 'O U O *3 ! vyivvlv CORPORATION ID100/ID101 GENERAL DESCRIPTION The ID100 and ID101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents.


    OCR Scan     		PDF M4322 000035b ID100/ID101 ID100 ID101 DD003S7 1D100 XID100 XID101

    ID100

    Abstract: No abstract text available
    Text: CALOGIC CORP UflE D f /l l A W i /1 CQIOOIC • 1AM4322 000035L. 7 I Dual LowLeaka9e 0 i o c l e T'OUOOl CO RPORA TION ' v ID100/ID101 GENERAL DESCRIPTION The ID 1 00 and ID101 are monolithic dual diodes intended for use in applications requiring extremely low leakage currents.


    OCR Scan     		PDF 1AM4322 000035L. ID100/ID101 ID101 ID100 ID101

    ID100

    Abstract: ID101 T071 ID101 diode
    Text: DIMBHÎ^DIL ID 100, ID101I Low Leakage» M onolithic Dual Diode» FEATURES PIN CONFIGURATIONS • Ir = 0.1 pA typical • BVr > 30 V • Cr = 0.75 pF (typical) TO-71 TO-78 GENERAL DESCRIPTION The ID IO O and ID101 are m o n o lith ic dual diodes intended


    OCR Scan     		PDF ID100, ID101I ID101 10sec. id101 ID100/ID101 ID100 T071 ID101 diode