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    PG110B

    Abstract: nec microwave
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG110B 2 to 8 GHz WIDE BAND AMPLIFIER DESCRIPTION The µPG110B is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage required high gain characteristic of the microwave communication


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    PG110B PG110B nec microwave PDF

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02 PDF

    20M32

    Abstract: u1520
    Text: CO FIFO BUFFER MEMORY/IC MEMORY CARD ★ U n d e r d e v e lo p m e n t • FIFO BUFFER MEMORIES ♦ Features • It is applicable to communication and OA equipment, as a data buffer between systems operating at different speeds. Bit Capacity configuration


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    280sk orx16 x8/x16 ID244DXX ID244Exx ID244Gxx ID244Hxx ID244KXX 20M32 u1520 PDF

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG110B 2 to 8 GHz WIDE BAND AMPLIFIER DESCRIPTION T h e /xP G 110B is a G a A s m o n o lith ic in te g ra te d c irc u it d e s ig n e d as a w id e b a n d a m p lifie r from 2 G H z to 8 G H z. T h e d e vice is m ost s u ita b le fo r th e gain stag e re q u ire d high gain c h a ra c te ris tic o f th e m icro w a ve co m m u n ic a tio n


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    uPG110B PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS FEATURES * Two Channel Optocoupler * High Current Transfer Ratio at lF=1 mA, 500% Wn. * Withstand Test Voltage, 2500 VRMS * Electrical Specifications Similar to Standard 6 Pin Coupler * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering


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    RS481 E52744 ILD223 ID223 PDF