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    IDT71281 Search Results

    IDT71281 Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDT71281L25L28 Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25L28B Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25TC Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25TCB Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25TP Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25TPB Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25Y Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L25YB Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30L28 Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30L28B Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30TC Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30TCB Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30TP Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30TPB Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30Y Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L30YB Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L35L28 Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L35L28B Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L35TC Integrated Device Technology CMOS Static RAMS 256K Scan PDF
    IDT71281L35TCB Integrated Device Technology CMOS Static RAMS 256K Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: CM OS STATIC RAMS 256K 64K x 4-BIT ' , S ep a ra te Data Inputs an d O u tp u ts pr e lim in a r y IDT71281S/L IDT71282S L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s highperformance, high-reliability technology—CEMOS. This state-ofthe-art technology, combined with innovative circuit design


    OCR Scan     		PDF IDT71281S/L IDT71282S IDT71281/IDT71282 144-bit 350mW. IDT71281 IDT71282 IL-STD-883,

    2S35

    Abstract: R05F
    Text: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and Outputs Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • Th e ID T 7 1 2 8 1 /ID T 7 1 282 are 26 2,144-b it high-speed static


    OCR Scan     		PDF IDT71281S/L IDT71282S/L 71281S 71282S 10Ojiw 28-pin 200mV IDT71282 2S35 R05F

    71282

    Abstract: MIL-STD-8831
    Text: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and O utputs Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • The IDT71281/IDT71282 are 262,144-bit high-speed static RAMs organized as 64K x 4. They are fabricated using IDT’s


    OCR Scan     		PDF IDT71281S/L IDT71282S/L IDT71281S/L: IDT71282S/L: 30/35/45/55ns 25/35/45ns IDT71281/2S 400mW IDT71281/2L 350mW 71282 MIL-STD-8831

    s4141

    Abstract: 2L20 S4140 2S20 DSC1018
    Text: | àt Integrated DeviceTechnology Inc CMOS STATIC RAMS 256K 64K x 4-BIT) Separate Data Inputs and Outputs P R E L IM IN A R Y ID T 7 1 2 8 1 S /L ID T 7 1 2 8 2 S /L FEATURES: DESCRIPTION: • S eparate d ata inp u ts and o utp uts • IDT71281S/L: o utp u ts tra ck Inputs d u rin g w rite m ode


    OCR Scan     		PDF IDT71281S/L: T71282S/L: T71281/2S T71281/2L MIL-STD-883, S4-142 s4141 2L20 S4140 2S20 DSC1018

    MIL-STD-8831

    Abstract: No abstract text available
    Text: CMOS STATIC RAMS 256K 64K x 4-BIT Separate Data Inputs and Outputs ADVANCE INFORMATION IDT71281S/L IDT71282S/L FEATURES: DESCRIPTION: • • • • The ID T 7 1 2 8 1 /ID T 7 1 282 are 2 6 2 ,1 44-bit high-speed static RAM s organized as 64K x 4. They are fabricated using ID T’s


    OCR Scan     		PDF IDT71281S/L IDT71282S/L IDT71281S/L: IDT71282S/L: 30/35/45/55ns 25/35/45ns IDT71281/2S 400mW IDT71281/2L 350mW MIL-STD-8831

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


    OCR Scan     		PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    Untitled

    Abstract: No abstract text available
    Text: FEB 2>6 »992 Data Sheet January 1992 ATT7C191 ATT7C192 ^ A T& T Microelectronics High-Speed CMOS SRAM 256 Kbit 64K x 4 , Separate I/O Features • High speed — 12 ns maximum access times ■ Transparent write (ATT7C191) or highimpedance write (ATT7C192)


    OCR Scan     		PDF ATT7C191 ATT7C192 ATT7C191) ATT7C192) IDT71281/71282 CY7C191/192 28-pin, ATT7C191 ATT7C192