diagram ic A 7800A
Abstract: A 7800A DIM1800ESM17-E000
Text: DIM1800ESM17-E000 DIM1800ESM17-E000 Single Switch IGBT Module PDS5793-1.1 July 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) ■ 10µs Short Circuit Withstand
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DIM1800ESM17-E000
PDS5793-1
diagram ic A 7800A
A 7800A
DIM1800ESM17-E000
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DIM1200FSM12-A000
Abstract: No abstract text available
Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003
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DIM1200FSM12-A000
DS5547-2
DS5547-3
DIM1200FSM12-A000
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74188
Abstract: DIM1200NSM12-E000 IGBT full bridge 1200 28130
Text: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5750-1.2 FEATURES PDS5750-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *
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DIM1200NSM12-E000
PDS5750-1
PDS5750-2
74188
DIM1200NSM12-E000
IGBT full bridge 1200
28130
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160nF
Abstract: DIM900ESM45-F000
Text: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability
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DIM900ESM45-F000
DS5872-1
LN24283)
160nF
DIM900ESM45-F000
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DIM200MKS12-A000
Abstract: DS-5552
Text: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*
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DIM200MKS12-A000
DS5552-1
60arantee
DIM200MKS12-A000
DS-5552
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DIM400DDM12-A000
Abstract: DS5532-3
Text: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5532-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5532-3.0 March 2003
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DIM400DDM12-A000
DS5532-2
DS5532-3
3300Varantee
DIM400DDM12-A000
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4250A
Abstract: DIM2400NSM12-E000 Partial Discharge Measurements
Text: DIM2400NSM12-E000 DIM2400NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5758-1.0 FEATURES PDS5758-2.0 April 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ
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DIM2400NSM12-E000
PDS5758-1
PDS5758-2
4250A
DIM2400NSM12-E000
Partial Discharge Measurements
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was dual transistor
Abstract: DIM200MBS12-A000
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM
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DIM200MBS12-A000
DS5543-1
DS5545-2
DIM200MBS12-A000
was dual transistor
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DIM400GCM33-A000
Abstract: No abstract text available
Text: DIM400GCM33-A000 DIM400GCM33-A000 IGBT Chopper Module DS5613-1.1 June 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability KEY PARAMETERS VCES VCE sat *
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DIM400GCM33-A000
DS5613-1
DIM400GCM33-A000
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DFM600XXM45-F000
Abstract: DS5915-1
Text: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating
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DFM600XXM45-F000
DS5915-1
LN25309)
DFM600XXM45-F000
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DFM400NXM33-F000
Abstract: 3300V FRD
Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating
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DFM400NXM33-F000
DS5910-1
LN25214)
DFM400NXM33-F000
3300V FRD
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DFM200PXM33-F000
Abstract: basic ac motor reverse forward electrical diagram
Text: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM200PXM33-F000
DS5908-
LN25211)
DFM200PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
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DFM600XXM65-K000
Abstract: DFM600XXXM65-K000
Text: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating
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DFM600XXXM65-K000
DS5807-1
LN25500)
DFM600XXe
DFM600XXM65-K000
DFM600XXXM65-K000
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DIM100PHM33-F000
Abstract: No abstract text available
Text: DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module DS5764-1.2 June 2008 LN26119 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■
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DIM100PHM33-F000
DS5764-1
LN26119
DIM100PHM33-F000
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bi-directional switches IGBT
Abstract: DIM400PBM17-A000
Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module DS5524-2.3 June 2008 LN26123 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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DIM400PBM17-A000
DS5524-2
LN26123)
DIM400PBM17-A000
170arantee
bi-directional switches IGBT
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160nF
Abstract: 4500a u4200 DIM900ESM45-F000
Text: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)
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DIM900ESM45-F000
DS5872-1
LN25831)
DIM900ESM45-F000
450ty
160nF
4500a
u4200
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DIM400XCM33-F000
Abstract: No abstract text available
Text: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A
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DIM400XCM33-F000
DS5938-1
LN26594)
DIM400XCM33-F000
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data sheet IC 7400
Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon
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DIM1600FSM17-
DS5455-3
LN26327)
data sheet IC 7400
IC 7400 datasheet
information OF ic 7400
DIM1600FSM17-A000
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DFM900FXM12-A000
Abstract: No abstract text available
Text: DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.3 November 2007 LN25316 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 900A 1800A Isolated Copper Base plate
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DFM900FXM12-A000
DS5479-1
LN25316)
DFM900FXM12-A000
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DFM1200EXM12-A000
Abstract: DFM1200EXM12 DFM1200EXM
Text: DFM1200EXM12-A000 Fast Recovery Diode Module DS5481-1.4 June 2008 LN26170 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Triple Diodes Can be paralleled for 3600A KEY PARAMETERS
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DFM1200EXM12-A000
DS5481-1
LN26170)
DFM1200EXM12-A000
DFM1200EXM12
DFM1200EXM
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DFM600FXM18-A000
Abstract: 1050g
Text: DFM600FXM18-A000 DFM600FXM18-A000 Fast Recovery Diode Module DS5438-1.4 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM typ VF (max) IF (max) IFM 1800V 2.0V 600A 1200A ■ Isolated Base
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DFM600FXM18-A000
DS5438-1
DFM600FXM18-arantee
DFM600FXM18-A000
1050g
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DIM200PLM33-F000
Abstract: No abstract text available
Text: DIM200PLM33-F000 . IGBT Chopper Module DS5864- 1.1 June 2008 LN26121 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Isolated AlSiC Base with AlN substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) • High thermal cycling capability
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DIM200PLM33-F000
DS5864-
LN26121)
DIM200PLM33-F000
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Untitled
Abstract: No abstract text available
Text: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)
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DIM150WHS12-E000
PDS5630-1
DIM150WHS12-E000
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ALSIC 145
Abstract: DFM400PXM33-F000
Text: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates
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DFM400PXM33-F000
DS5909-
LN26124)
DFM400PXM33-F000
3300-volt,
ALSIC 145
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