IEGT 4500V Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
ST2100GXH22A Abstract: TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200 Text: TOSHIBA ST2100GXH22A TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST2100GXH22A HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT ＣＥＥＧ MAXIMUM RATINGS (Ta=25degC) ITEMs	Original	PDF	ST2100GXH22A 25degC) ST2100GXH22A TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200
nikkei S-200 Abstract: TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH Text: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT ＣＥＥＧ MAXIMUM RATINGS (Ta=25degC) ITEMs	Original	PDF	ST1500GXH22 25degC) 10ms-Halransportation nikkei S-200 TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH
IEGT 4500V Abstract: TOSHIBA SILICON N-CHANNEL IEGT TOSHIBA IEGT TOSHIBA IEGT 4500V 1000GXHH25 S6X06 IEGT tf75 IEGT toshiba Text: TOSHIBA S6X06 TOSHIBA SILICON N-CHANNEL IEGT S6X06 <TENTATIVE SPEC.> HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APLICATIONS ● High Input Impedance. ● Enhancement Mode. EQUIVALENT CIRCUIT ＣＥＥＧ MAXIMUM RATINGS Ta=25℃ CHARACTERISTICS Collector-Emitter Voltage	Original	PDF	S6X06 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT TOSHIBA IEGT TOSHIBA IEGT 4500V 1000GXHH25 S6X06 IEGT tf75 IEGT toshiba
IEGT 4500V Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm Text: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu, Shigeru Kusunoki, Katsumi Satoh, Junji Yamada, Yoshiharu Yu, John F. Donlon, Hideo Iwamoto, Eric R. Motto *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan	Original	PDF
IEGT 4500V Abstract: n mosfet depletion 600V IEGT IGBT 4500V mitsubishi igbt cm Text: The CSTBT, a New 1200V Power Chip with Low VCE sat and Robust Short Circuit Withstanding Eric Motto, John F. Donlon, Yoshifumi Tomomatsu, Shigeru Kusunoki Katsumi Satoh, Junji Yamada, Yoshiharu Yu, Hideo Iwamoto * Fukuryo Semicon Engineering Corporation, Fukuoka, Japan	Original	PDF
IEGT 4500V Abstract: depletion p mosfet IGBT CHIP 1700V IEGT PCIM eric motto NITTA Text: A 1700V LPT-CSTBT With Low Loss and High Durability Eric Motto, John Donlon, Tsutomu Nakagawa, Youichi Ishimura, Katsumi Satoh, Junji Yamada, Masanori Yamamoto* Shigeru Kusunoki, Hideki Nakamura, Katsumi Nakamura* *Powerex Incorporated, Youngwood, PA USA	Original	PDF