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    Hubbell Premise Wiring HIF10AE

    P CORD, HI IMPACT, F, BK, F HIF, 10ft | Hubbell Wiring Device-Kellems HIF10AE
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    Hubbell Wiring Device-Kellems HIF10AE

    Hubbell
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    IF10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NC75Z04

    Abstract: why we used sinc filter in Delta sigma modulation Single-Sideband Upconversion of Quadrature DDS FC-65 sinc filter in Delta sigma modulation B.A date sheet 2012 fsk modem motorola INTERPOLATOR 6 BITS SIN COS INTERPOLATOR SIN COS 1/NC75Z04
    Text: a FEATURES Low-Cost 3.3 V CMOS Analog Front End Converter for MCNS-DOCSIS, DVB, DAVIC-Compliant Set-Top Box, Cable Modem Applications 232 MHz Quadrature Digital Upconverter DC to 65 MHz Output Bandwidth 12-Bit Direct IF D/A Converter TxDAC+ Programmable Reference Clock Multiplier (PLL)


    Original
    12-Bit 12-Bit, 10-Bit, AD9873 C01584 100-Lead S-100C) NC75Z04 why we used sinc filter in Delta sigma modulation Single-Sideband Upconversion of Quadrature DDS FC-65 sinc filter in Delta sigma modulation B.A date sheet 2012 fsk modem motorola INTERPOLATOR 6 BITS SIN COS INTERPOLATOR SIN COS 1/NC75Z04 PDF

    Untitled

    Abstract: No abstract text available
    Text: a FEATURES Low-Cost 3.3 V CMOS Analog Front End Converter for MCNS-DOCSIS, DVB, DAVIC-Compliant Set-Top Box, Cable Modem Applications 232 MHz Quadrature Digital Upconverter DC to 65 MHz Output Bandwidth 12-Bit Direct IF D/A Converter TxDAC+ Programmable Reference Clock Multiplier (PLL)


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    12-Bit 12-Bit, 10-Bit, AD9873 C01584â 100-Lead S-100C) PDF

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN s SEMICONDUCTOR M B R 2 0 3 5 C T - M B R 2 0 2 0 0 C T 20.0 AMPS. S ch o ttky B a rrie r R ectifiers R o H S TO-220AB COMPLIANCE Features I I— P la s tic m aterial used ca rrie s U nd e rw rite rs Laboratory C la ssifica tio n s 94V -0 M etal silicon ju n ctio n , m a jo rity ca rrie r conduction


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    O-220AB MBR2035CT MBR20200CT) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT Æ lltron CATTALO' N-CHANNEL ENHANCEMENT M05 FET 400V, 1O A , 0 . 5 6 D SDF340 SDF340 Drain-Gate RGS=1.0Mn Î (D-1 - TERMINAL CONNECTIONS 3 H DRAIN 1 2 S OURCE S OURCE 3 GATE GATE STANDARD BEND CONFIGURATIONS Voltage (1) Drain Current DRAIN JAA


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    SDF340 IF-10A PDF

    RTF60

    Abstract: tca 765 je100
    Text: I 7=12^237 QQD2351 2 S G S-THOMSON 59C 02351 O T H O M S O N - C S D 7^ o 17 ' F R T F 1 - * , 8 a DIVISION SEMICONDUCTEURS DISCRETS E S M 7 G 5 . 1 ü ^ H IG H E F F IC IE N C Y FA ST R E C O V E rtV R E C T IF IE R S SUPERSWITCH REDRESSEURS R A PIDES A H A U T R E N D E M E N T


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    Q2351 ESM765 100BOO RTF60 tca 765 je100 PDF

    SBL1040

    Abstract: ERC62-004 SBL1030 S5S3M
    Text: SBL1030 AND SBL1040 SCHOTTKY RECTIFIER VOLTAGE RANGE - 30 and 40 Volts CURRENT - 1 0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction y s ; ♦ Low power loss,


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    SBL1030 SBL1040 O-220 JS514J 50mVp-p ERC62-004 S5S3M PDF

    SRA10100

    Abstract: marking code .gj MARKING J1A QPCN900I SRA1020 SRA1090 Taiwan Semiconductor Code marking 1F1 VF075
    Text: s SRA1020 -SRA10150 TAIWAN SEMICONDUCTOR 10.0 AMPS. Schottky Barrier Rectifiers TO-220AC RoHS C O M P L IA N C E am ir r o Mai - ni/i 7^— •': - -ST> - ÏÎÎS .!» F e atures <>■ <>■ <> 4- «• 17.X« 44) i./i Low p o w e r loss, high efficie n cy.


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    SRA1020 SRA10150 Or220AC O-220AC mil-STD-202, SRA1090. SRA10100 QPCN900I, S58280A) marking code .gj MARKING J1A QPCN900I SRA1090 Taiwan Semiconductor Code marking 1F1 VF075 PDF

    ALQQ

    Abstract: mosfet M05
    Text: Æutran JM 8^4 3 H ,_ product 'i?T L X ^ S 1-3 4 3 5 ^ » FAX : F 4 0 7 * 8 6 3 - S94G N-CHANNEL ENHANCEMENT M05 FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo It.(1) VDSS Dra in-Gate Vo 1tage VDGR (Rg s -1-OMo ) (1) Gate-Source Voltage


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    IF-10A i/dt-100A/ ALQQ mosfet M05 PDF

    1da marking

    Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
    Text: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion


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    MBR10H100CT MBR10H200CT O-220AB 1da marking MBR10H200CT TV125 MARKING CODE 1DA PDF

    MBR1035

    Abstract: MBR1045 MBR1050 MBR1060
    Text: MBR1035 AND MBR1045 SCHOTTKY RECTIFIER VOLTAGE RANGE - 35 and 45 Volts CURRENT-10.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammabilty Classifications 94V-0 Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency


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    MBR1035 MBR1045 CURRENT-10 O-220 Tj-25 MBR1050 MBR1060 PDF

    Untitled

    Abstract: No abstract text available
    Text: E TAIWAN SEMICONDUCTOR MBRF1035 - MBRF10200 Isolated 10.0 AM PS. Schottky Barrier Rectifiers RoHS ITO-220AC COMPLIANCE 11; í 1" I 2ÍB.ÍW >v.s i : Features ❖ Pla site materia I u sed carr le s U nderwrlte rs ❖ Metal silicon Junción, majority carrier conduction


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    MBRF1035 MBRF10200 ITO-220AC PDF

    yg906c2r

    Abstract: No abstract text available
    Text: 7 m $ —K/ f iT J l' Rectifier Diodes -H" 2 in one-package «5 5Et Device type SMD KS923C2 KP923C2 TP901C2 TP901C3 ESAB92-02 YG901C2R YG901C3R TS902C2 TS902C3 TP902C2 TP902C3 ESAC92-02 YG902C2R YG902C3R ESAC93-02 ESAC93M-02 ESAC93M-03 TS906C2 YG906C2R ESAD92-02


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    T0-220F15 O-220F15 yg906c2r PDF