Untitled
Abstract: No abstract text available
Text: 'J. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-P-N TYPE 2NT19 GROWN JUNCTION SILICON TRANSISTOR 36 to 86 beta spread Specifically designed for bigk gain at Ugh temperatures mechanical data
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2NT19
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Untitled
Abstract: No abstract text available
Text: ERB84-009<2a IfW H H ii ’ O utline Drawings SCHOTTKY BARRIER DIODE i Features • 1£V f Low VF A 9 - 3 - K : ff Super high speed switching. Color code : Blue • T V - * - ft ffC J itA flr m tt High reliability by planer design Abridged typ e name f a •y f-fja
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l95t/R89
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ifw 60
Abstract: MIL-G-45024
Text: From: DocuFACTSttm Ph# 949-253-7438 To: 16038801932 Pomona 8-13-99 8:25an p. 4 of 7 Model 3782 Minigrabber Test Clip To Stacking Banana Plug_ — 0 .34 8 .6 4 ) T .52 (13 .21) 0.166 (4 .2 2 ) v ifw A —A • Provides a Minigrabber output from a Banana Jack.
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QQ-C-533,
MIL-G-45024,
D37B2J
02/1V99
ifw 60
MIL-G-45024
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Diode erb84-009
Abstract: ERB84-009 a353
Text: ERB84-009<2a IfW H H ii ’ O utline Drawings SC H O T TK Y B A R R IE R DIODE i Features • 1£V f Low VF A 9 - 3 - K : ff Super high speed switching. Color code : Blue • T V - * - f t f f C J it A f lr m t t High reliability by planer design Abridged typ e name
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ERB84-009
2/3X80
9B-60
Diode erb84-009
a353
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AN7256
Abstract: 400HZ K 7256 M SIL-18 AN 7256
Text: Panasonic ic AN7256 F M + « « * * « , « » E l i s / F M IF Amplifier, Detector for Car Radios • « * Unit AN 7256 FM >■ IF / X f i t , '• mm 18 f -s= > 4 t„ ■ & m • * « » , • 9 * i& m m K7 i ifW & K 'P + s ^ • A FC ffl& iJiSi v h h
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AN7256
SIL18
18-lead
400Hz
7E003D
AN7256
K 7256 M
SIL-18
AN 7256
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ERB84-009
Abstract: Diode erb84-009
Text: ERB84-009<2a IfW H H ii ’ O utline Drawings SC H O T TK Y B A R R IE R DIODE i Features • 1£V f Low VF A 9 - 3 - K : ff Super high speed switching. Color code : Blue • T V - * - f t f f C J it A f lr m t t High reliability by planer design Abridged typ e name
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ERB84-009
2/3X80
9B-60
Diode erb84-009
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PN521
Abstract: 521-9674 202E 1S701
Text: * wv.v D I A L IGHT P A R I HUMBER LE NS COLOR wavelength i nm A N G L E < DE G. ) 20 1/ 2 evr : 0 ; I : IMHr i mcd) e i r : 20 mA; 25°C «vnnm w «If iv u ifW t I f i vu » utyw i p / = 20 fftA; 2 5 * C TYP. MIN. TYP, TYP. MAX. A 8 MAX. RED D I F F U S E D
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C-16382
PN521
521-9674
202E
1S701
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Untitled
Abstract: No abstract text available
Text: i U M 6 1 16-25/-35/-4S ifW li 2Kx 8 High Speed CMOS SRAM Features • S ingle + 5 v o lt p o w e r su p p ly D ire c tly T T L c o m p a tib le : A ll in p u ts and o u tp u ts ■ Access tim es: 2 5 /3 5 /4 5 ns m ax. C o m m o n I/O using th re e -sta te o u tp u t
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16-25/-35/-4S
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Untitled
Abstract: No abstract text available
Text: COS/MOS IN T EG R A T ED C IR C U IT S 4 0 4 .^ 6 , t 4 o ì \ > c= > r > w tu itm m m S g ' i ifw w «* PR ELIM IN A R Y DATA HEX BUFFER/CONVERTERS: HCC/HCF 4049UB - IN VE R TIN G TYPE HCC/HCF 4050B -N O N -IN V E R T IN G TYPE • H IG H S IN K C U R R E N T FOR D R IV IN G 2 T T L LOADS
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4049UB
4050B
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Untitled
Abstract: No abstract text available
Text: 3.7 Datum 2.65 Id.-Nr. Anforderunqsstufe date xxxx In class i e rn i In i 254n s In i In f ON csf ïI ï l * I U 1 M M M M M M M I U 1 M hi ill I ifw H in n i v • v II w I r i ■ w V i w v w in n i f b j-a 2.54 0.8 x 0.3 c d 2.54 31 x 2.54 -78,74 3 x 2,54 =7,62
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164062/Nr
025Diameter
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HM5-6564
Abstract: HM-6564 T1526
Text: ifW ì H A R R IS » m A DIVISION OF H A R RIS CORPO RATION SEM ICO NDUCTOR P R O D U C T S DIVISI ON H M 5-6 56 4 8K x 8 , 16K x 4 C M O S R A M Pinout Features TO P V IE W 4m W M A X LO W PO W ER S T A N D B Y LO W POW ER O P E R A T IO N D A T A R E T E N T IO N
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HM5-6564
280mW/MHz
350ns
HM-6564
HM4-6504
HM5-6564
T1526
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C0433
Abstract: cd236
Text: PART NUMBER REV. SML-HL505SYC ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER MIN TYP PEAK WAVELENGTH lf= 2 0 m A MAX UNITS 590 FORWARD VOLTAGE Z.D REVERSE VOLTAGE Z.5 Vf 5.0 Vr AXIAL INTENSITY 750 mcd VIEWING ANGLE 60 2x theta EMITTED COLOR: YELLOW EPOXY LENS FINISH:
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SML-HL505SYC
100juA
YEI10W
590nm
C0433
cd236
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F16W60
Abstract: V10-V0
Text: Power US m & ?ü m ^ + ?s m K b-i > • V - ^ P F *f — b • V — K U -Y^ f&ñít ¡Wfiii (£ - $ ) '7 tp.Tm (l&lïïO ^ ti ^ 2. T it» T rh V n<;<; Vr,^ 1n 1 np I < : Pt TOR MOS FET tm g ( W Ë ) ü & f ll -55-15 0 15 0 600 ±30 16 4 8 1 6 î 50 8 (5 ).
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2SK206I
F16W60)
F16W60
V10-V0
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D2SBA40
Abstract: SHINDENGEN DIODE
Text: SHINDENGEN ELECTRIC MFG SHE D • 021^307 ODOOMbl bSÔ H S H E J ■ O U T L IN E D IM E N S IO N S D2SBAD 600V 1.5A ■ Æ fê Ü RATING S î& ê& H t^SË fê A b s o lu t e M axim um R a tin g s Ì5H ^ . . II g M Sym bol Item im i a« S to ra g e T e m p e ra tu re
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D2SBA20
D2SBA40
D2SBA60
c--25
D0D04b2
SHINDENGEN DIODE
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563 j 400v
Abstract: 8002A scr SOT-23 JE SOT23 npn 400V sot-23 CMKTC825A CMXDM7002A TLM532 KS sot 23 pnp 400v 10a
Text: le n H Sem iconductor Corp. }TM Central www.centralsemi.com/product/whatsnew VCE SAT f i t t g 60V, 200mA CET3904E (NPN) CMBT3904E (NPN) CET3906E (PNP) CMBT3906E (PNP) SOT-883L s* • * » * « 1 1 4 * 1 . S tS S 10mA T i * VCE(SAT) « i x * 0.1V. • SOT-883L in SOT-923 S S IS tfS iiJ, ffigij .
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200mA
CET3904E
CET3906E
OT-883L
CMBT3904E
CMBT3906E
OT-923
OT-883L
OT-923
lRSOT-23FM1
563 j 400v
8002A
scr SOT-23
JE SOT23
npn 400V sot-23
CMKTC825A
CMXDM7002A
TLM532
KS sot 23
pnp 400v 10a
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Untitled
Abstract: No abstract text available
Text: SL ‘ON B DATE JR & REV. Z 6 £ Z 0 I PS m nDR.0 m a & D E S C R IP T IO N DON NO. a m CHK. m & APPD. APPD. ON I M V H Q -è-SMH ±0.4 88.8 ±0.2 87.29 ±0 . 2 1.905 w 0 . 6 X t 0 .3 T X 2 4 - 1 2 0 R - 6 S T - E 1 E > < CONTACT N o . 60 CONTACT No. 1
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S-1425-50*
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DIODE rg 709
Abstract: 250M SSS10N60A 74242 N-Channel 600V MOSFET
Text: SSS10N60A A dvanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge Id = 5.1 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA(Max.) @ V DS = 600V
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SSS10N60A
O-220F
0040S0Ã
DIODE rg 709
250M
SSS10N60A
74242
N-Channel 600V MOSFET
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1620CT
Abstract: 1640CT 1660CT MURF1620CT MURF1660CT
Text: is TAIWAN SEMICONDUCTOR MURF1620CT - MURF1660CT Isolated 16.0 AMPS. Switchmode Power Rectifiers RoHS ITO-22QAB COMPLIANCE .374 9.6 .134(3.4)DIA .113(3.0)DIA .121(3.1) .098(2.5) r VJ •272(6.9) .246(6.3) Features 4•> ■> -0<■> -0-v- .606(15.5) .583(14.8)
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MURF1620CT
MURF1660CT
ITO-22QAB
E-326243
ITO-220AB
MURF1660CT)
50Vdc
1620CT
1640CT
1660CT
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irf6348
Abstract: IRF7206 HEXFET Power MOSFET hexfet navigator IBF7306 IRFBC406
Text: Internationa! IO R Rectifier The HEXFET Power MOSFET Navigator Through-Hole Devices KEY: Part number FOD Document # Date for Date for Samples Production TO-220 TO-220 FullPak illustrations not to scale TO-247 (TO-3P) 'ï« N A T I C + iA L ÎE C Ï .N E *
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O-220
O-220
O-247
TD-220
irf6348
IRF7206
HEXFET Power MOSFET
hexfet navigator
IBF7306
IRFBC406
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n V rsm Rectifier Diodes Ifav sin. 180; Tease — 7 5 °C V rrm V 1550 A 400 SKN 1500/04 SKN 1500 SKN 2000 2 00 0 A SKN 2000/06 600 1200 SKN 1500/12 SKN 2000/12 1600 SKN 1500/16 SKN 2000/16 2 000 SKN 2000/20 2400 SKN 1500/20 SKN 1500/24 2 900
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B8-35
013bb71
0GDb334
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H21L
Abstract: H21L1 H21L2
Text: SLOTTED OPTICAL SWITCH W M u n s im ts H21L1/2 PACKAGE DIMENSIONS D1- ^1 *bl| 1 M>D & E in + » j s •<pp 1 - SEC TIO N X - X LEAD PRO FILE a□ □ ST1344 SYMBOL MILLIMETERS MIN, MAX. 10.7 A 11.0 3.0 3.2 At 3.2 3,0 A* .600 .750 b, .50 NOM. D 24.3 24.7
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H21L1/2
ST1344
ST1166
H21L
H21L1
H21L2
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tcl 110011 ic
Abstract: lm 398- SAMPLE AND HOLD
Text: inte1 M W l M fT O B R M B T O N ] M80C186XL20,16,12,10 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR Low Power, Full Static Version of M80C186 Operation Modes: — Enhanced Mode — DRAM Refresh Control Unit — Power-Save Mode — Direct Interface to 80C187
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M80C186XL20
16-BIT
M80C186XL20)
M80C186XL16)
M80C186XL12)
M80C186XL)
80C186
M80C186XL
PL/M-86,
Pascal-86,
tcl 110011 ic
lm 398- SAMPLE AND HOLD
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Untitled
Abstract: No abstract text available
Text: I I NOTES ♦Material: AV ND. 1.Body: PPS UL 94V -0 Rated, Color:Black; 2.Cover: PPS UL 94V -0 Rated, Color:Black; 3.Contact: Phosphor Bronze; 4.Contact Plating: 30u” Semi Gold Plating Over Nickel on Contact Area, Tin/Lead Plating on Terminal. ;d v e r ♦Specification:
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SCV-W2523X30-06
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Untitled
Abstract: No abstract text available
Text: 1 Amp Schottky Rectifier HSM150*. H S M 1 6 0 Dim. Inches I -L A C A ± Millimeter Minimum Maximum Minimum Maximum Notes A B C E F G H T IT 00214AA D0215AA .081 .160 .130 .205 .075 .270 .015 .030 .067 .180 .155 .220 .095 .290 .030 .060 2.06 4.06 3.30 5.21
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HSM150*
00214AA
D0215AA
HSM160Â
HSM160*
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