DIM500GCM33-TS000
Abstract: DIM500GCM33-TS
Text: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)
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DIM500GCM33-TS000
DS6098-2
DS6098-3
LN31960)
65ames
DIM500GCM33-TS000
DIM500GCM33-TS
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates
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DIM500GCM33-TS000
DS6098-1
LN30465)
2400ames
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DIM500GCM33-TL000
Abstract: DIM500GCM33-TL
Text: DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 LN31264 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM500GCM33-TL000
DS6114-1
DS6114-2
LN31264)
DIM500GCM33-TL000
DIM500GCM33-TL
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TS000 IGBT Chopper Module DS6098-1 May 2013 LN30465 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base With AlN Substrates
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DIM500GCM33-TS000
DS6098-1
LN30465)
2400ames
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Untitled
Abstract: No abstract text available
Text: DIM500GCM33-TL000 IGBT Chopper Module DS6114-1 July 2013 LN30663 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM500GCM33-TL000
DS6114-1
LN30663)
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68nF
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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68nf
Abstract: diode 500A IGBT FF 300 IC800
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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DIM500GDM33-TS000
Abstract: DIM500GDM33-TS
Text: DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-2 DS6097-3 September 2014 LN31961 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC
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DIM500GDM33-TS000
DS6097-2
DS6097-3
LN31961)
DIM500GDM33-TS000
DIM500GDM33-TS
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Untitled
Abstract: No abstract text available
Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates
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DIM500GDM33-TS000
DS6097-1
LN30461)
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Untitled
Abstract: No abstract text available
Text: DIM500GDM33-TL000 Dual Switch IGBT Module DS6113-1 July 2013 LN30662 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max) High Current Density Enhanced DMOS SPT
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DIM500GDM33-TL000
DS6113-1
LN30662)
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DIM500GDM33-TL000
Abstract: DIM500GDM33-TL DS61132
Text: DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 LN31251 FEATURES KEY PARAMETERS • Low VCE(sat) Device 10µs Short Circuit Withstand High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)
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DIM500GDM33-TL000
DS6113-1
DS6113-2
LN31251)
DIM500GDM33-TL000
DIM500GDM33-TL
DS61132
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Untitled
Abstract: No abstract text available
Text: DIM500GDM33-TS000 Dual Switch IGBT Module DS6097-1 May 2013 LN30461 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) Isolated AlSiC Base with AlN Substrates
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DIM500GDM33-TS000
DS6097-1
LN30461)
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LM 949
Abstract: DIM500BSS12-H000 transistor 600v 500a
Text: DIM500BSS12-H000 DIM500BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5643-1.2 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) † (max) IC
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DIM500BSS12-H000
DS5643-1
20kHz
DIM500BSS12-H000
LM 949
transistor 600v 500a
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IC LM 2003
Abstract: No abstract text available
Text: DIM500BSS12-H000 DIM500BSS12-H000 Fast Single Switch IGBT Module Target Infomation DS5643-2.0 September 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) † (max)
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DIM500BSS12-H000
DS5643-2
20kHz
DIM500BSS12-H000
IC LM 2003
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K30120G3
Abstract: ISL9K30120G3 smart ups 750 circuit MOSFET 1200v 30a K30120G AN-7528 IGBT 500A 1200V mosfet 1200V 30a smps
Text: ISL9K30120G3 30A, 1200V Stealth Dual Diode General Description Features The ISL9K30120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K30120G3
ISL9K30120G3
K30120G3
smart ups 750 circuit
MOSFET 1200v 30a
K30120G
AN-7528
IGBT 500A 1200V
mosfet 1200V 30a smps
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diode 500A
Abstract: diode 500A 1200v
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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Untitled
Abstract: No abstract text available
Text: ISL9R30120G2 30A, 1200V Stealth Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft recovery under typical
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ISL9R30120G2
ISL9R30120G2
120lopment.
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diode 500A
Abstract: IGBT 500A 1200V FF51
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 500 R 25 KF1 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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SKIIP DRIVER
Abstract: No abstract text available
Text: SKiiP 592 GH 170 - 2*271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Untitled
Abstract: No abstract text available
Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT
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diode b73
Abstract: No abstract text available
Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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semikron skiip 3
Abstract: semikron skiip 10 diode b73
Text: SKiiP 592 GB 170 - 271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM
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Untitled
Abstract: No abstract text available
Text: SKiiP 592 GH 170 - 2*271 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET NO. PD-9.802 International S ] Rectifier IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT • Latch-proof • Simple gate drive • High operating frequency • Switching-loss rating includes
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OCR Scan
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IRGPC50UD2
Liguna49
00220b3
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