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    IGBT 600A Search Results

    IGBT 600A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 600A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SCR Inverter

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: • 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT.  NEAR HERMETIC PACKAGE.  USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES.


    Original     		PDF SPM1003 SCR Inverter

    4MBI300VG-120R-50

    Abstract: 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A
    Text: / 4MBI300VG-120R-50 IGBT Modules IGBT MODULE V series 1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package Features Higher Efficiency Optimized A (T-type) -3 level circuit Low inductance module structure


    Original     		PDF 4MBI300VG-120R-50 4MBI300VG-120R-50 4MBI300VG120 4MBI300 chip Express t2 4mbi300vg 4MBI300VG-120 igbt 600V 300A

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


    Original     		PDF 00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module

    GAE100BA60

    Abstract: GAE150BA60 GAE75BA60 sanrex IGBT GH-039 GH-038
    Text: IGBT MODULE GAE75BA60 UL;E76102 （M） SanRex IGBT Module GAE75BA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode trr=0.1 s reverse connected across IGBT.


    Original     		PDF GAE75BA60 E76102 GAE75BA60 3-M5depth12mm VCES600V 31MAX 32MAX IC75A GAE100BA60 GAE150BA60 sanrex IGBT GH-039 GH-038

    MBN600GR12

    Abstract: IGBT-SP-99034 IGBT 600V 600A
    Text: Spec. No. IGBT-SP-99034 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12 [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING Unit in mm 110 93 4-φ6.5 2-M8 E C E 80 62 40 • Low saturation voltage and high speed. · Low turn-OFF switching loss.


    Original     		PDF IGBT-SP-99034 MBN600GR12 00A/1200V, 36max MBN600GR12 IGBT 600V 600A

    FZ600R65KF2

    Abstract: IGBT 6500V
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KF2 hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe • Traktionsumrichter TypicalApplications


    Original     		PDF FZ600R65KF2 BarcodeCode128 FZ600R65KF2 IGBT 6500V

    74hc06

    Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
    Text: 目录 各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动 上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路


    Original     		PDF PHMB400B12 PDMB100B12C 1/2LiC21/2Cse2 600V1 200A1 200V800AIGBT3 100kWIGBT 200A1200V800A 74hc06 TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A

    FZ600R65KE3

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ600R65KE3 hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 600A / ICRM = 1200A TypischeAnwendungen • Mittelspannungsantriebe


    Original     		PDF FZ600R65KE3 Isolationseigenschaftenvon10 FZ600R65KE3

    A 3150V

    Abstract: HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT
    Text: Improved Characteristics of 3.3kV IGBT Modules M.Hierholzer, R.Bayerer, eupec GmbH & Co KG, Warstein, Germany A.Porst, H.Brunner, Siemens AG, München, Germany 3.3kV IGBT modules are available on the market since beginning of 1996. In most applications the IGBT


    Original     		PDF 500Hz-1000Hz A 3150V HIGH VOLTAGE DIODE 3.3kv 3150v IGBT 3kv Measurement of stray inductance for IGBT FZ1200R33KF1 scsoa IC A 3150V eupec igbt 3.3kv dc motor speed control circuit diagram with IGBT

    M57962AL

    Abstract: DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER
    Text: QC962 Hybrid Integrated IGBT Driver QC962 is a hybrid integrated IGBT driver designed for driving N-channel IGBT modules in any gate amplifier application. The device provides the required electrical isolation between input and output with the opto-coupler.


    Original     		PDF QC962 QC962 pin13 pin14 3300pF 51MAX 10MAX M57962AL DATA SHEET OF IGBT IGBT control circuit igbt welding igbt wiring Igbt 15kV 600A M57962 "IGBT Driver" IGBT with V-I characteristics OPTO COUPLER

    74hc06

    Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
    Text: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로


    Original     		PDF 100kW 74hc06 equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT

    M57962AL

    Abstract: IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R
    Text: IGBT gate drivers DC-DC converters Apr. 2010 PoWer Module Division ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 1 /30 Pre-regulator AC200V or AC440V RECTIFIER VLA31X Isolated DC-DC converter IGBT driver VLA106 VLA503 VLA106 VLA503 VLA106 IGBT Module


    Original     		PDF AC200V AC440V VLA106 VLA31X VLA503 M57962AL IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDQ4 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R4 MBM600F17D 000cycles)

    d2 diode series

    Abstract: DIODE D2 diode Vfm igbt module QIQ0660001 diode 600a
    Text: QIQ0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 IGBT H-Series Chopper Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors


    Original     		PDF QIQ0660001 Amperes/600 d2 diode series DIODE D2 diode Vfm igbt module QIQ0660001 diode 600a

    IGBT 600a

    Abstract: QIS0660001 IC600A igbt 600a output ac
    Text: QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors


    Original     		PDF QIS0660001 Amperes/600 2025kHz) IGBT 600a QIS0660001 IC600A igbt 600a output ac

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592 OT-227

    corrosion inhibitor

    Abstract: Hitachi DSA00281
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R2 MBM600F17D 000cycles) 50Hwhole corrosion inhibitor Hitachi DSA00281

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592

    Untitled

    Abstract: No abstract text available
    Text: APT200GT60JRDQ4 600V, 200A, VCE ON = 2.0V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JRDQ4 50KHz E145592

    GSA300AA120

    Abstract: No abstract text available
    Text: IGBT MODULE GSA300AA120 UL;E76102 （M） SanRex IGBT Module GSA300AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and with a fast switching, soft recovery diode trr=0.1 s reverse connected across IGBT.


    Original     		PDF GSA300AA120 E76102 GSA300AA120 Ic300A VCES1200V depth11mm 63MAX 25MAX 36MAX 109MAX

    IGBT DRIVE 600V 300A

    Abstract: what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A
    Text: QIQ0630003 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy


    Original     		PDF QIQ0630003 -1200A/ IGBT DRIVE 600V 300A what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A

    Untitled

    Abstract: No abstract text available
    Text: Dual IGBT Module Spec.No.IGBT-SP-10006-R4 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		PDF IGBT-SP-10006-R4 MBM600F17D 000cycles)

    APT100DQ60

    Abstract: APT200GT60JR
    Text: APT200GT60JR 600V, 200A, VCE ON = 2.1V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		PDF APT200GT60JR 50KHz E145592 APT100DQ60 APT200GT60JR