Untitled
Abstract: No abstract text available
Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV30H60T3G
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APT0406
Abstract: APT0502 APTGV30H60T3G
Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Q3 11 • Solar converter
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APTGV30H60T3G
APT0406
APT0502
APTGV30H60T3G
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IXGR60N60C3C1
Abstract: G60N60 60N60C3 IF110 ISOPLUS247
Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
247TM
IF110
60N60C3C1
IXGR60N60C3C1
G60N60
60N60C3
IF110
ISOPLUS247
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G60N60
Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
Text: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
ISOPLUS247TM
IF110
60N60C3C1
1-15-10-A
G60N60
IF110
ISOPLUS247
IXGR60N60C3C1
I40-13
Ultra fast diode
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGR60N60C3C1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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IXGR60N60C3C1
IC110
40-100kHz
ISOPLUS247TM
IF110
60N60C3C1
1-15-10-A
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E80276
Abstract: PM75RVA060
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT
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PM75RVA060
20kHz
E80276
E80271
PM75RVA060
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Untitled
Abstract: No abstract text available
Text: SIGC25T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 30A
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SIGC25T60NC
Q67050-A4143A001
7262-M,
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APT0502
Abstract: 50CT
Text: APTCV60TLM991G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 17A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTCV60TLM991G
APT0502
50CT
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APT0406
Abstract: APT0502
Text: APTCV60TLM99T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 17A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies
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APTCV60TLM99T3G
APT0406
APT0502
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Untitled
Abstract: No abstract text available
Text: SIGC25T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 30A
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SIGC25T60NC
Q67050-A4143A001
7262-M,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT
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PM75RVA060
20kHz
E80276
E80271
131ROL
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Untitled
Abstract: No abstract text available
Text: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter
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APTGV100H60T3G
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30N60B3D
Abstract: IXXH30N60B3 IXXH30N60
Text: Advance Technical Information IXXH30N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60B3
IC110
125ns
O-247
062in.
30N60B3D1
30N60B3D
IXXH30N60B3
IXXH30N60
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Untitled
Abstract: No abstract text available
Text: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV50H60T3G
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APT0406
Abstract: APT0502 APTGV100H60T3G
Text: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Q3 11 • Solar converter
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APTGV100H60T3G
APT0406
APT0502
APTGV100H60T3G
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APT0406
Abstract: APT0502 APTGV75H60T3G
Text: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Q3 11 • Solar converter
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APTGV75H60T3G
APT0406
APT0502
APTGV75H60T3G
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Untitled
Abstract: No abstract text available
Text: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3
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APTGV75H60T3G
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IXXH30N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH30N60B3D1
125ns
O-247
IF110
30N60B3D1
IXXH30N60B3D1
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30N60C3D
Abstract: 30N60C3D1 IXXH30N60 30N60C3 ixxh30n60c3d1
Text: Advance Technical Information IXXH30N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60C3D1
IC110
O-247
IF110
062in.
30N60C3D1
30N60C3D
IXXH30N60
30N60C3
ixxh30n60c3d1
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30N60C3D
Abstract: No abstract text available
Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH30N60C3D1
O-247
IF110
30N60C3D1
30N60C3D
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g60n
Abstract: 60N60C
Text: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR
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IXGR60N60C3D1
IC110
IF110
60N60C3
01-15-10-E
g60n
60N60C
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30N60B3D
Abstract: 30N60B3 IXXH30N60B3D1
Text: Advance Technical Information IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60B3D1
IC110
125ns
O-247
IF110
062in.
30N60B3D1
30N60B3D
30N60B3
IXXH30N60B3D1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH30N60C3
IC110
O-247
30N60C3D1
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Untitled
Abstract: No abstract text available
Text: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4:
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APTGV50H60BG
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