IGBT GT8G131 Search Results

IGBT GT8G131 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

IGBT GT8G131 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A3120 Abstract: No abstract text available Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode	Original	GT8G131 A3120	PDF
GT8G131 Abstract: a3120 Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area · 4th generation trench gate structure IGBT · Enhancement-mode	Original	GT8G131 GT8G131 a3120	PDF
a3120 Abstract: GT8G131 Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode	Original	GT8G131 a3120 GT8G131	PDF
TCA160 Abstract: No abstract text available Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode	Original	GT8G131 TCA160	PDF
A3120 Abstract: IGBT gt8g131 Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area · 4th generation trench gate structure IGBT · Enhancement-mode	Original	GT8G131 A3120 IGBT gt8g131	PDF
Untitled Abstract: No abstract text available Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode	Original	GT8G131	PDF
IGBT gt8g131 Abstract: GT8G131 a3120 Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode	Original	GT8G131 IGBT gt8g131 GT8G131 a3120	PDF
GT30F121 Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications	Original	BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101	PDF
s5j53 Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require	Original	E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A	PDF
ZS1092 Abstract: flashtubes flashtube trigger coil Diagram igbt flash P6015A IGBT gt8g131 perkin GT8G131 200UF Text: Device Name Issued Date Issued By : BGDC 1017 /2502 : 09/03/2003 : Page # Rev Date Index # : 1 of 3 : : 1. Mechanical Data All dimensions in mm and diagram is not drawn to scale e l d r g b c 17+/-0.7 27.0 max 2.0+/-0.1 1.2+/-0.1 23.5+/-1.0 0.8+/-0.1 0.7+/-0.1	Original	HS-DDC-H24-0004 ZS1092 flashtubes flashtube trigger coil Diagram igbt flash P6015A IGBT gt8g131 perkin GT8G131 200UF	PDF
S6A35 Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47 Text: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例交交流入力二次整流ダイオード流フィルタ + 直流出力 − 差動増幅回路駆動用	Original	AC100 1JU42 AC200 05NU42 CMS04, CMS05 5FWJ2CZ47M 5FWJ2C48M 10FWJ2CZ47M 10FWJ2C48M S6A35 SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF