IGBT SKW30N60HS Search Results

IGBT SKW30N60HS Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J110SRA		Toshiba Electronic Devices & Storage Corporation	IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
TLP5702H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP5705H		Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

IGBT SKW30N60HS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
igbt dimmer Abstract: SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60 Text: P R O D U C T B R I E F Fast & H i g h S p e e d I G BT for Industrial and Consumer Applications As Single IGBT version or DuoPackTM with very soft, fast recovery anti-parallel EmConTM Diode IGBT & DuoPack TM Applications Benefits • Motor Drives ■ Easy paralleling	Original	PDF	B152-H7942-X-X-7600 igbt dimmer SKW30N60HS SGP15N120 igbt 2A SKP15N60 SKW25N120 220 volt dimmer circuit SGW25N120 smps 12 volt SKW30N60
SKW30N60HS Abstract: IGBT SKW30N60HS Q67040-S4503 Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4503 May-03 SKW30N60HS IGBT SKW30N60HS Q67040-S4503
SKW30N60HS Abstract: IGBT SKW30N60HS Text: Preliminary Datasheet SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 16 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution	Original	PDF	SKW30N60HS O-247AC Q67040-S4244-A001 Sep-01 SKW30N60HS IGBT SKW30N60HS
SKW30N60HS Abstract: No abstract text available Text: Preliminary Datasheet SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time –10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS SKW30N60HS O-247AC Q67040-S4503 Jan-02
K30N60HS Abstract: K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS PG-TO-247-3-1 Q67040sS4503 PG-TO-247-3-1 O-247AC) SKW30N60HS K30N60HS K30N60HS IGBT IGBT K30N60HS K30N60 equivalent of K30N60HS
k30N60hs Abstract: K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60- Text: SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS PG-TO-247-3 K30N60HS k30N60hs K30N60HS IGBT K30N60 SKW30N60HS equivalent of K30N60HS IGBT K30N60HS IGBT SKW30N60HS PG-TO-247-3 350nS K30N60-
SKW30N60HS Abstract: mj15 Q67040-S4503 IGBT SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS P-TO-247-3-1 O-247AC) O-247AC Q67040-S4503 Aug-02 SKW30N60HS mj15 Q67040-S4503 IGBT SKW30N60HS
K30N60HS Abstract: k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS k30n60 K30N60HS IGBT IGBT K30N60HS equivalent of K30N60HS
K30N60HS Abstract: equivalent of K30N60HS k30n60 K30N60HS IGBT SKW30N60HS Text: SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW30N60HS PG-TO-247-3-21 SKW30N60HS K30N60HS equivalent of K30N60HS k30n60 K30N60HS IGBT
Electric Welding Machine diagram Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS Text: High Speed 600V IGBT for fast switching Applications S. Cordes, H. Preis, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : The key component for power Electronic applications – the power switch - is still a semiconductor	Original	PDF	10kHz O-247 TC100 O-220 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt SKW30N60HS
IGBT SKW30N60HS Abstract: igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel Text: High Speed IGBT 600V in NPT Technology for Welding Applications S. Cordes, L. Lorenz Infineon Technologies AG St.-Martinstr. 76 81541 München Introduction : NPT Technologie : The key component for power Electronic applications – the power switch - is still a	Original	PDF	10kHz O-247 TC100 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS SGW30N60HS IGBT SKW30N60HS igbt 400V 20A dc welding machine circuit diagram igbt welding DATA SHEET OF IGBT IGBT 600v 20a Measurement of stray inductance for IGBT igbt 1200V 20A igbt welding machine IGBT parallel
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	PDF	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
PX3544 Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly	Original	PDF	lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
TDA 16822 Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as	Original	PDF	B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3