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    IGCT HIGH Search Results

    IGCT HIGH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    IGCT HIGH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7000UC

    Abstract: 5SDF16L4502 106A2 16L4502
    Text: Key Parameters VRRM = 4500 IFAVM = 1300 IFRMS = 2000 IFSM = 33 VF0 = 2.00 rF = 0.55 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 Features • Patented free-floating silicon technology


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    PDF 16L4502 CH-5600 7000UC 5SDF16L4502 106A2 16L4502

    snubber IGCT

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 950 IFRMS = 1500 IFSM = 24 VF0 = 1.94 rF = 0.86 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA 1115-03 Feb. 99 Features • Patented free-floating technology


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    PDF 10H4502 CH-5600 snubber IGCT

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 255 IFRMS = 400 IFSM = 5 VF0 = 2.00 rF = 3.8 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 03D4502 PRELIMINARY Doc. No. 5SYA 1117-02 Feb. 99 Features • Patented free-floating technology


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    PDF 03D4502 CH-5600

    igct abb

    Abstract: 16L45 IGCT a7000 5SDF16L4502
    Text: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 1300 2000 33 2.00 0.55 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 • • • • • Patented free-floating silicon technology


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    PDF 16L4502 CH-5600 igct abb 16L45 IGCT a7000 5SDF16L4502

    snubber IGCT

    Abstract: ABB Semiconductors 5SYA1106-02
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 03D4501 Doc. No. 5SYA1106-02 Sep. 01 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters


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    PDF 03D4501 5SYA1106-02 CH-5600 snubber IGCT ABB Semiconductors

    IGCT

    Abstract: snubber IGCT
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters


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    PDF 03D4501 CH-5600 IGCT snubber IGCT

    snubber IGCT

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters


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    PDF 03D4501 CH-5600 snubber IGCT

    IGCT thyristor ABB

    Abstract: IGCT IGCT thyristor 5SHY 35L4510 IGCT thyristor current max 35L45 35L4510 HFBR-1528 HFBR-2528 MTA-156
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.4 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 mΩ Ω V Doc. No. 5SYA1232-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


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    PDF 35L4510 5SYA1232-00 10Test CH-5600 IGCT thyristor ABB IGCT IGCT thyristor 5SHY 35L4510 IGCT thyristor current max 35L45 35L4510 HFBR-1528 HFBR-2528 MTA-156

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 April 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and


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    PDF 35L4510 5SYA1232-02 CH-5600

    IGCT thyristor ABB

    Abstract: IGCT igct abb IGCT thyristor current max IGCT thyristor CS 213 35L4503 MTA-156 thyristor 325 V 1 kW 640389-4
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4503 Doc. No. 5SYA1228-01 Jan. 01 • • • • • • Highest snubberless turn-off rating Suitable for series connection


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    PDF 35L4503 5SYA1228-01 CH-5600 IGCT thyristor ABB IGCT igct abb IGCT thyristor current max IGCT thyristor CS 213 35L4503 MTA-156 thyristor 325 V 1 kW 640389-4

    IGCT thyristor ABB

    Abstract: IGCT IGCT thyristor igct abb IGCT thyristor current max 5SHY 35L4510 35L4510 high power igct abb gct thyristor IGCT high
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor mΩ Ω V PRELIMINARY 5SHY 35L4510 Doc. No. 5SYA1232-00 Mai 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


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    PDF 35L4510 5SYA1232-00 CH-5600 IGCT thyristor ABB IGCT IGCT thyristor igct abb IGCT thyristor current max 5SHY 35L4510 35L4510 high power igct abb gct thyristor IGCT high

    IGCT thyristor ABB

    Abstract: IGCT IGCT thyristor high power igct abb IGCT thyristor current max IGCT abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 3800 28 1.70 0.457 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 mΩ Ω V Doc. No. 5SYA1234-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


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    PDF 35L4511 5SYA1234-00 CH-5600 IGCT thyristor ABB IGCT IGCT thyristor high power igct abb IGCT thyristor current max IGCT abb

    IGCT

    Abstract: IGCT thyristor ABB IGCT thyristor chopper igct igct abb IGCT high 5SHY 35L4510 IGCT high voltage high power igct abb HFBR lifetime
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 4000 32 1.40 0.325 2800 V A kA V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 mΩ Ω V Doc. No. 5SYA1232-00 Sep. 01 • Highest snubberless turn off rating • Optimized for medium frequency <1kHz and


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    PDF 35L4510 5SYA1232-00 CH-5600 IGCT IGCT thyristor ABB IGCT thyristor chopper igct igct abb IGCT high 5SHY 35L4510 IGCT high voltage high power igct abb HFBR lifetime

    schematic diagram igbt inverter welding machine

    Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
    Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality


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    A125

    Abstract: B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb high power igct abb igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


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    PDF 35L4511 5SYA1234-02 CH-5600 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb high power igct abb igct application

    IGCT thyristor ABB

    Abstract: igct abb 55L4500 IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 5500 33x103 1.3 0.26 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 PRELIMINARY Doc. No. 5SYA1243-01 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz)


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    PDF 55L4500 5SYA1243-01 CH-5600 IGCT thyristor ABB igct abb 55L4500 IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156

    IGCT 7000

    Abstract: 55L4500 high power igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5000 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-05 Jan 10 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity


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    PDF 55L4500 5SYA1243-05 CH-5600 IGCT 7000 55L4500 high power igct abb

    high power igct abb

    Abstract: igct 6500 42L6500
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 4200 26x103 1.75 0.59 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-02 May 08 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback


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    PDF 42L6500 5SYA1245-02 CH-5600 high power igct abb igct 6500 42L6500

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mW V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-01 July 14 • High snubberless turn-off rating · Optimized for medium frequency · High electromagnetic immunity


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    PDF 35L4520 5SYA1248-01 CH-5600

    HFBR-2521Z

    Abstract: 6227-1 j-900 HFBR-1528Z
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


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    PDF 35L4521 5SYA1253-00 CH-5600 HFBR-2521Z 6227-1 j-900 HFBR-1528Z

    IGCT thyristor ABB

    Abstract: IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 6500 4200 26x103 2.0 0.54 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6530 PRELIMINARY Doc. No. 5SYA1246-00 Aug. 07 • High snubberless turn-off rating • Wide temperature range


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    PDF 42L6530 5SYA1246-00 CH-5600 IGCT thyristor ABB IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb

    35L4520

    Abstract: IGCT high voltage
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


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    PDF 35L4520 5SYA1248-00 CH-5600 35L4520 IGCT high voltage

    35L4522

    Abstract: high power igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating  Optimizedfor low frequency  High electromagnetic immunity


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    PDF 35L4522 5SYA1249-00 CH-5600 35L4522 high power igct abb

    high power igct abb

    Abstract: IGCT thyristor current max amp mta 156
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 3800 26x103 1.88 0.56 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-03 June 10 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback


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    PDF 42L6500 5SYA1245-03 CH-5600 high power igct abb IGCT thyristor current max amp mta 156