IN483
Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1N483B
1N485B
1N486B
MIL-PRF-19500/118
100mA
IN483
IN485
IN483B
1N483B
1N485B
1N486B
IN485B
IN486B
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IN485B
Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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Original
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PDF
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1N483B
1N485B
1N486B
MIL-PRF-19500/118
100mA
IN485B
IN486B
IN485
IN483B
1N483B
1N485B
1N486B
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IN3599
Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5
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1N194A
1N195
1K200
1N201
JN202
IN4829
1N4J30
MP035Ã
MPD302
MPB401
IN3599
1N9168
1N4242
IN485
IN625
1N20S
1N4389
1N4243
in648
IN458a
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IN3599
Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0
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OCR Scan
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PDF
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DD0DB05
IN3599
IN433A
IN625
1N3068
1N218
1N4147
IN648
1N3069
1N3067
IN485
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