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    IN647 Search Results

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    IN647 Price and Stock

    KEMET Corporation UPIN6471701000

    Power Inductors - Leaded 470uH 10% 700mA DCR=630mOhms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI UPIN6471701000 Box 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.683
    Buy Now

    IN647 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    IN6284

    Abstract: IN6282 IN647 2190 ctv IN6286A
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473


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    PDF 1N6469 1N6470 IN6471 1N6472 1N6473 1N6474 1N6475 1N6476 IN6284 IN6282 IN647 2190 ctv IN6286A

    diode oa202

    Abstract: IN647 OA200 diode TID125 CA500 1S121 1S131 TID140N BY401 IN645
    Text: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7


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    PDF 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 DO-35 diode oa202 IN647 OA200 diode TID125 CA500 TID140N BY401 IN645

    MIH SERIES

    Abstract: IN6476
    Text: IN6461 thr IN 6468and IN6469 thru IN6476 Mierosemi Corp. SANTA A N A. CA h o i mort- in In r m i ? id y " Q - s 2 : o at ton call: TRANSIENT SUPPRESSORS FEATURES - HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M OST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.


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    PDF IN6461 6468and IN6469 IN6476 MIL-S-19500/551. 150DW 1N6461 1N6468 1N6469 1N6476 MIH SERIES IN6476

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    Abstract: No abstract text available
    Text: IN6461 thr IN6468 and IN6469 thru IN6476 Microsemi Corp. ? Thp diode experts i SANTA A N A , CA F o r m o r e i n f o r m a t i o n call: 714 9 7 9 -8 2 2 0 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.


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    PDF IN6461 IN6468 IN6469 IN6476 MIL-S-19500/551, 1N6461 1N6468 1N6469 1N6476 1000ilsec

    Untitled

    Abstract: No abstract text available
    Text: IN6461 thri IN6468 and IN6469 thru IN6476 SA.\ IA I V I . C l For more inforni 714 979-8220 I P i l l i FEATURES TRANSIENT SUPPRESSORS • HIGH S U R G E CAP AC ITY PR OV IDES T R A N S IE N T P R O T EC TIO N FOR M O ST C R ITIC A L CIR C U ITS . • T R IP LE LA YER PASSIVATION.


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    PDF IN6461 IN6468 IN6469 IN6476 MIL-S-19500/551, 00G3711 1N6461 1N6468 1N6469 1N6476

    IN6463

    Abstract: IN6475 IN6464 IN6476 IN6466
    Text: IN6461 thru IN6468 and IN6469 thru IN6476 Microsemi Corp. Y The dio d e experts SANTA ANA, CA SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 714 979-8220 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.


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    PDF IN6461 IN6468 IN6469 IN6476 MIL-S-I9500/551. 1N6461 1N6468 1N6469 1N6476 IN6463 IN6475 IN6464 IN6476 IN6466

    CV7040

    Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
    Text: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7


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    PDF 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 DO-35 CV7040 cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE

    IN6478-IN6484

    Abstract: No abstract text available
    Text: COMPLETELY ENCAPSULATED BRAZED CONSTRUCTION CAVITY-FREE OPAQUE GLASSPASSIVATED JUNCTION SOLID BRAZING. LOW RESISTANCE EXCELLENT SURGE CAPABILITIES BRAZED-TEMP > 600°C 'G lass-plastic encapsulation technique is covered by PatentNo. 3,996,602 of 1976; brazed -lead assembly b Patent No. 3,930,306 ol 1976 and glass


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    PDF IN6478-IN6484 GL41A-GL41M)

    IN647

    Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
    Text: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200


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    PDF DO-35 200mA IN647 IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202