ADM6993
Abstract: ADM6992 Tx/Fx Media Converter fibre to ethernet converter TS-1000 TS1000 Tx/Fx ethernet switch 100M 4 port
Text: Product Brief ADM6993 Fiber-to-Fast Ethernet Converters The ADM6993 consists of Fiber to Fast Ethernet converters on a single chip, integrating two 10/100 Mbps MDIX TX/FX transceivers with a two-port 10/100M Ethernet L2 switch controller. Features include an OAM engine for
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ADM6993
ADM6993
10/100M
TS1000
10Base-T/100Base-TX
100Baion
B000-H0000-X-X-7600
ADM6992
Tx/Fx Media Converter
fibre to ethernet converter
TS-1000
Tx/Fx
ethernet switch 100M 4 port
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infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR193L3
infineon marking L2
BFR193L3
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BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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BFR380L3
BFR193L3
BFR380L3
marking FC
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR340L3
Infineon Technologies transistor 4 ghz
BFR193L3
BFR340L3
BFR34* transistor
marking FA
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C5 MARKING TRANSISTOR
Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)
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BFR380L3
C5 MARKING TRANSISTOR
infineon marking code L1
Infineon Technologies transistor 4 ghz
BFR193L3
BFR380L3
INFINEON transistor marking
MARKING CODE 21E
infineon marking code L2
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Infineon Technologies transistor 4 ghz
Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description
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BFR193L3
Infineon Technologies transistor 4 ghz
BFR193L3
infineon marking code L2
1B marking transistor
INFINEON transistor marking
C5 MARKING TRANSISTOR
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BFR193L3
Abstract: BFR340L3 marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
BFR193L3
BFR340L3
marking FA
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marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR380L3
marking FC
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Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR193L3
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marking FA
Abstract: No abstract text available
Text: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
marking FA
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infineon marking L2s
Abstract: BCR402U 402U BCW66H SC74
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
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BCR402U
infineon marking L2s
BCR402U
402U
BCW66H
SC74
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CSC74
Abstract: No abstract text available
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
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BCR402U
CSC74
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Germanium power
Abstract: No abstract text available
Text: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München
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BGA615L7
D-81541
BGA615L7
BGA619
Germanium power
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infineon marking L2s
Abstract: CSC74
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
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BCR402U
infineon marking L2s
CSC74
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SMD MARKING CODE f2
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
SMD MARKING CODE f2
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Untitled
Abstract: No abstract text available
Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA231N7
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BFR360L3
Abstract: BFR193L3
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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BFR360L3
BFR360L3
BFR193L3
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet, Rev.1.1, Jan. 2009 BGA461 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2009-01-22 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA461
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infineon marking L2s
Abstract: infineon marking code L2s CSC74
Text: BCR402U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications
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BCR402U
infineon marking L2s
infineon marking code L2s
CSC74
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V05 SMD CODE MARKING
Abstract: TSLP-7-4 BGA461 sMD .v05 smd V05 transistor SMD .v05 smd marking code v05 INFINEON marking BGA c4 smd marking code marking pon
Text: Preliminary Data Sheet, Rev.1.1, Jan. 2009 BGA461 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2009-01-22 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA461
V05 SMD CODE MARKING
TSLP-7-4
BGA461
sMD .v05
smd V05
transistor SMD .v05
smd marking code v05
INFINEON marking BGA
c4 smd marking code
marking pon
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TRANSISTOR MARKING NK
Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!
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BFR949T
TRANSISTOR MARKING NK
BCR108T
BFR949T
SC75
SC79
SCD80
BFR94
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marking FA
Abstract: BFR340T
Text: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340T
marking FA
BFR340T
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BFR360L3
Abstract: BFR193L3
Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR360L3
BFR360L3
BFR193L3
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Untitled
Abstract: No abstract text available
Text: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR181T
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