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    INFINEON X-GOLD 116 Search Results

    INFINEON X-GOLD 116 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CN-AC3MMDZBAU Amphenol Cables on Demand 3-Pin XLR Male Panel Mount Connector - Amphenol AC3MMDZB-AU - Solder Type (Black + Gold Contacts) Datasheet
    CN-ACPRREDAA0 Amphenol Cables on Demand RCA Male Plug Cable Connector (Red) - Amphenol ACPR-RED - Gold Plated Diecast Shell Datasheet
    AV-3.5MINYRCA-015 Amphenol Cables on Demand Amphenol AV-3.5MINYRCA-015 Stereo Y Adapter Cable - Premium Gold Stereo 3.5mm (Headphone Plug) to Dual RCA Y Adapter Cable - 3.5mm Mini-Stereo Male to Dual RCA Male 15ft Datasheet
    DA14580 PLT Golden Unit Renesas Electronics Corporation Bluetooth® Low Energy 16-site Production Line Tool Kit Golden Unit Daughterboard Visit Renesas Electronics Corporation
    101015147502A Amphenol Communications Solutions T-flash Card Hingd With 15u\\ Gold Visit Amphenol Communications Solutions

    INFINEON X-GOLD 116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X-GOLD 118

    Abstract: xgold 118 ARM11 processor Infineon X-GOLD 116 X-GOLD x-goldtm ARM11 baseband block diagram of wireless gsm camera infineon x-gold gsm modem block diagram
    Text: Product Brief X-GOLDTM116 Ultra-low cost GSM/GPRS Single-Chip Solution for Messaging Phones Main Features THE Infineon X-GOLD 116 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit and FM Radio. After the successful market introduction of the 2nd generation


    Original     		PDF X-GOLDTM116 X-GOLDTM101 X-GOLDTM116 ARM11ances. B153-H9348-X-X-7600 NB08-1333 X-GOLD 118 xgold 118 ARM11 processor Infineon X-GOLD 116 X-GOLD x-goldtm ARM11 baseband block diagram of wireless gsm camera infineon x-gold gsm modem block diagram

    Untitled

    Abstract: No abstract text available
    Text: PTF 102079 LDMOS RF Power Field Effect Transistor 30 Watt, DCS/PCS Band, 1930–1990 MHz Description Key Features The PTF 102079 is a 30–watt, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. This LDMOS device operates at 47% efficiency P–1dB . Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 1522-PTF

    PTF+102015

    Abstract: PTF102015 102015
    Text: PTF 102015 LDMOS RF Power Field Effect Transistor 30 Watts, 2110–2170 MHz Description Key Features The PTF 102015 is a 30–watt internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device operates at 47% efficiency with 16 dB gain. Full gold metallization ensures


    Original     		PDF 1522-PTF PTF+102015 PTF102015 102015

    PTF210301A

    Abstract: PTF210301E
    Text: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301A PTF210301A 30-watt, PTF210301E

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    PTF210301E

    Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
    Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301 PTF210301 PTF210301E marking us capacitor pf l1 PTF210301A DD 127 D TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301 PTF210301

    PC100-222

    Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
    Text: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation


    Original     		PDF HYS64V32220GD 256MB PC100/PC133 PC133 PC100 PC100-222 PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8

    TRANSISTOR tl131

    Abstract: 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-37248-2 TRANSISTOR tl131 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear

    Untitled

    Abstract: No abstract text available
    Text: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation •


    Original     		PDF 256MB PC100 HYS64V32220GD PC133 256Mbit MO-190)

    PC100-322

    Abstract: SO-DIMM 144-pin
    Text: 3.3V SDRAM Modules HYS64V32220GD L -8A 256MB PC100 144 pin SO-DIMM SDRAM Modules Preliminary information • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 notebook applications • Two bank 32M x 64 non-parity module organisation


    Original     		PDF HYS64V32220GD 256MB PC100 PC100 128MB 32Mx64 GLD09138 PC100-322 SO-DIMM 144-pin

    HYS64V16220GDL

    Abstract: HYS64V16220GDL-7 HYS64V16220GDL-8
    Text: 3.3V SDRAM Modules HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 128 MB density Target Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • two bank 16M x 64 non-parity module organisation


    Original     		PDF HYS64V16220GDL PC100 PC133 PC133 PC100 8Mx64 DM144-9 HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8

    PCC104bct-nd

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6 84MHz PCC104bct-nd

    Untitled

    Abstract: No abstract text available
    Text: 3.3V SDRAM Modules HYS64V8200GDL HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 64MB & 128 MB density • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation


    Original     		PDF HYS64V8200GDL HYS64V16220GDL PC100 PC133 PC133 PC100 L-DIM-144-10 HYS64V8200GDL/HYS64V16220GDL

    dimm pcb layout

    Abstract: HYS64V8200GDL-7 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8 HYS64V8200GDL
    Text: 144 pin SO-DIMM SDRAM Modules HYS64V8200GDL HYS64V16220GDL 64MB & 128 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation


    Original     		PDF HYS64V8200GDL HYS64V16220GDL PC100 PC133 PC133 PC100 HYS64V8200GDL/HYS64V16220GDL dimm pcb layout HYS64V8200GDL-7 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8 HYS64V8200GDL

    HYS64V32220GBDL-8-C2

    Abstract: No abstract text available
    Text: 144 pin SO-DIMM SDRAM Modules HYS64V32220GBDL 256MByte PC100 & PC133 BOC • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications


    Original     		PDF HYS64V32220GBDL 256MByte PC100 PC133 PC100 PC133 HYS64V32220GBDL-8-C2

    8mx64 infineon

    Abstract: No abstract text available
    Text: 3.3V SDRAM Modules HYS64V8200GDL HYS64V16220GDL HYS64V16221GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 64MB & 128 MB density Preliminary Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications


    Original     		PDF PC100 PC133 HYS64V8200GDL HYS64V16220GDL HYS64V16221GDL 25max. 8mx64 infineon

    32MX64

    Abstract: pc133 256 MB SDRAM SODIMM package SO-DIMM 144-pin
    Text: 3.3V SDRAM Modules HYS64V32220GCDL • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications • Performance:


    Original     		PDF HYS64V32220GCDL PC100 PC133 256MB PC100 PC133 GLD09192 32MX64 pc133 256 MB SDRAM SODIMM package SO-DIMM 144-pin

    sdram pcb layout

    Abstract: HYS64V8200GDL HYS64V16220GDL HYS64V16220GDL-7 HYS64V8200GDL-7 HYS64V8200GDL-8
    Text: 3.3V SDRAM Modules HYS64V8200GDL HYS64V16220GDL 144 pin SO-DIMM SDRAM Modules PC100 / PC133 64MB & 128 MB density • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation


    Original     		PDF HYS64V8200GDL HYS64V16220GDL PC100 PC133 PC133 PC100 sdram pcb layout HYS64V8200GDL HYS64V16220GDL HYS64V16220GDL-7 HYS64V8200GDL-7 HYS64V8200GDL-8

    HYS64V64220GBDL

    Abstract: MO-190
    Text: 144 pin SO-DIMM SDRAM Modules HYS64V64220GBDL 512 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 64M x 64 non-parity module organisation • suitable for use in PC100 and PC133 applications


    Original     		PDF HYS64V64220GBDL PC100 PC133 PC133 PC100 256MByte 512Mbyte HYS64V64220GBDL MO-190

    HYS64V16220GDL-8-C2

    Abstract: HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8 HYS64V8200GDL HYS64V8200GDL-7 HYS64V8200GDL-8 16X64 PC133-333 144
    Text: 144 pin SO-DIMM SDRAM Modules HYS64V8200GDL HYS64V16220GDL 64MB & 128 MB PC100 / PC133 • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC 100 and PC133 notebook applications • one bank 8M x 64 and two bank 16M x 64 non-parity module organisation


    Original     		PDF HYS64V8200GDL HYS64V16220GDL PC100 PC133 PC133 PC100 L-DIM-144-10 HYS64V8200GDL/HYS64V16220GDL HYS64V16220GDL-8-C2 HYS64V16220GDL HYS64V16220GDL-7 HYS64V16220GDL-8 HYS64V8200GDL HYS64V8200GDL-7 HYS64V8200GDL-8 16X64 PC133-333 144

    Untitled

    Abstract: No abstract text available
    Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank, 64MByte SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP 2 • PC100-222, PC133-333 and PC133-222


    Original     		PDF 64V8301GU 64-Bit 64MByte 168-pin PC100-222, PC133-333 PC133-222 PC133 PC100

    MO-161

    Abstract: PC100-222 PC133-222 PC133-333 TSOP54
    Text: HYS 64V8301GU SDRAM-Modules 3.3 V 8M x 64-Bit 1 Bank SDRAM Module 168-pin Unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • Programmed Latencies: Product Speed CL tRCD tRP • PC100-222, PC133-333 and PC133-222


    Original     		PDF 64V8301GU 64-Bit 168-pin PC100-222, PC133-333 PC133-222 PC133 PC100 PC133 MO-161 PC100-222 PC133-222 TSOP54

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU-7.5 HYS64/72V16220GU-7.5 PC133 168 pin unbuffered DIMM Modules • 168 Pin PC133-compatible unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications


    OCR Scan     		PDF 64/72-Bit HYS64/72V8200GU-7 HYS64/72V16220GU-7 PC133 PC133-compatible PC133 PC100 Progra95