Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode IR958-8P █ Features ․Low forward voltage ․Peak wavelength λp=950nm ․High reliability █ Descriptions The IR958-8P is a GaAs infrared emitting diode. The miniature side-facing device is a chip that
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IR958-8P
950nm
IR958-8P
DIR-958-142
22pcs
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MIE-406A4U
Abstract: No abstract text available
Text: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A4U Package Dimensions The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches
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MIE-406A4U
MIE-406A4U
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MIE-406A2U
Abstract: TO46 package
Text: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A2U Package Dimensions The MIE-406A2U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches
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MIE-406A2U
MIE-406A2U
TO46 package
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MIE-556A4U
Abstract: LTd1117 Infrared Emitting Diode pink
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556A4U Package Dimensions φ5.05 .200 The MIE-556A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-556A4U
MIE-556A4U
00MIN
LTd1117
Infrared Emitting Diode pink
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MIE-546A4U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-546A4U Package Dimensions φ5.05 .200 The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-546A4U
MIE-546A4U
00MIN
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MIE-516A4U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-516A4U Package Dimensions φ5.05 .200 The MIE-516A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-516A4U
MIE-516A4U
00MIN
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MIE-546A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-546A2U Package Dimensions φ5.05 .200 The MIE-546A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-546A2U
MIE-546A2U
00MIN
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840 opto
Abstract: MIE-526A2U
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-526A2U Package Dimensions φ5.05 .200 The MIE-526A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-526A2U
MIE-526A2U
00MIN
840 opto
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MIE-556A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556A2U Package Dimensions φ5.05 .200 The MIE-556A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-556A2U
00MIN
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MIE-536A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A2U Package Dimensions φ5.05 .200 The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-536A2U
MIE-536A2U
00MIN
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MIE-536A4U
Abstract: LTd1117
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A4U Package Dimensions φ5.05 .200 The MIE-536A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-536A4U
MIE-536A4U
00MIN
LTd1117
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MIE-516A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-516A2U Package Dimensions φ5.05 .200 The MIE-516A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-516A2U
00MIN
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MIE-526A4U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-526A4U Package Dimensions φ5.05 .200 The MIE-526A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-526A4U
00MIN
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Untitled
Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
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TEMD1000
08-Apr-05
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Abstract: No abstract text available
Text: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome
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TSMF1000
TSMF1020
TSMF1030
TSMF1040
TEMD1000
D-74025
08-Mar-05
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Photointerrupter
Abstract: No abstract text available
Text: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
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TSML1040
TEMT1000
18-Jul-08
Photointerrupter
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S 1040 smd
Abstract: TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
D-74025
08-Mar-05
S 1040 smd
TSML1020
TEMT1000
TSML1030
TSML1040
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S 1040 smd
Abstract: 1030 mhz TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1020
TSML1030
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TEMT1000
08-Apr-05
S 1040 smd
1030 mhz
TSML1020
TEMT1000
TSML1030
TSML1040
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TSML1020
Abstract: TEMT1000 TSML1000 TSML1030 TSML1040
Text: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage
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TSML1000
TSML1000
TSML1020
TSML1030
TSML1040
TEMT1000
08-Apr-05
TSML1020
TEMT1000
TSML1030
TSML1040
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Top Infrared LED SIR93-21C/TR8 Features ˙Package in 12mm tape on 7” diameter reels. ˙Peak wavelength λp=875nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR93-21C/TR8 is an infrared emitting diode in miniature SMD
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SIR93-21C/TR8
875nm.
SIR93-21C/TR8
NoDTS-093-103
date01-14-2003
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Top Infrared LED SIR67-21C/L107/TR8 Features ˙Package in 8mm tape on 7” diameter reels. ˙Peak wavelength λp=880nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR67-21C/L107/TR8 is an infrared emitting diode in miniature SMD
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SIR67-21C/L107/TR8
880nm.
SIR67-21C/L107/TR8
NoDTS-067-109
date01-28-2003
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l109
Abstract: No abstract text available
Text: Technical Data Sheet Top Infrared LED SIR93-21C/L109/TR8 Features ˙Package in 12mm tape on 7” diameter reels. ˙Peak wavelength λp=880nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR93-21C/L109/TR8 is an infrared emitting diode in miniature SMD
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SIR93-21C/L109/TR8
880nm.
SIR93-21C/L109/TR8
NoDTS-093-104
date01-15-2003
l109
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode IR958-8P Features Low forward voltage Peak wavelength p=950nm High reliability Pb free The product itself will remain within RoHS compliant version. Descriptions The IR958-8P is a GaAs infrared
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IR958-8P
950nm
IR958-8P
DIR-958-142
22pcs
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IR LED 810 nm
Abstract: No abstract text available
Text: Technical Data Sheet Reverse Package Infrared LED HIR23-21C/L80/TR8 Features ˙Small double-end package ˙High reliability ˙Low forward voltage ˙Good spectral matching to Si photodetector Descriptions HIR23-21C/L80/TR8 is an infrared emitting diode in miniature SMD
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HIR23-21C/L80/TR8
HIR23-21C/L80/TR8
NoDTH-023-105
date01-27-2003
IR LED 810 nm
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