INGAAS PHOTODIODES 1310 1550 Search Results

INGAAS PHOTODIODES 1310 1550 Result Highlights (5)

Part	Manufacturer	Description
NR8360JP-BC-AZ	Renesas Electronics Corporation	φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC
NR8800FS-CB-AZ	Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR8300FP-CC-AZ	Renesas Electronics Corporation	1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module
NR8800FS-CB-AZ/SH	Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
MLC1550-452MLC	Coilcraft Inc	General Purpose Inductor, 4.5uH, 20%, 1 Element, Iron-Core, SMD, 5452, CHIP, 5452, ROHS COMPLIANT

INGAAS PHOTODIODES 1310 1550 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VCSEL die bonding Abstract: SATURN PY-CM11 Text: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.	Original	PDF	1300/1550nm PY-CM11 1310nm 460X460 PY-CM11 VCSEL die bonding SATURN
forward reverse schematic diagram Abstract: R-11-055-G-B R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550 Text: InGaAs PIN Photodiodes R-11-055-G-B • R-11-075-G-B/BB • R-11-100-G-B • R-11-300-G-B Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85˚C operating temperature	Original	PDF	R-11-055-G-B R-11-075-G-B/BB R-11-100-G-B R-11-300-G-B R-11-055-G-B LUMNDS008-0402 forward reverse schematic diagram R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550
Ge APD Abstract: PD-LD analog laser diode 6 GHz Text: Analog InGaAs PIN Detectors Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 70 micron diameter active area detector that responds optimally to both 1310 and 1550	Original	PDF
EPM635-75 Abstract: JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series Text: OPTICAL COMMUNICATIONS C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm EPM 606 • Packaging - Single-mode 900 µm fiber with or without a connector	Original	PDF	498-JDSU 5378-JDSU EPM635-75 JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series
InGaas PIN photodiode, 1550 ,sensitivity Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM Text: Product Bulletin C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in	Original	PDF
JDSU EPM Abstract: JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635 Text: OPTICAL Communications C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical − Low back reflection − High responsivity in L-band at 1625 nm EPM 606 • Packaging − Single-mode 900 µm fiber with or without a connector	Original	PDF	498-JDSU 5378-JDSU JDSU EPM JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635
JDS Uniphase photodiode epm 605 Abstract: JDS Uniphase photodiode epm 606LL InGaas PIN photodiode, 1550 sensitivity pin photodiode 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application photodiode 1550 nm EPM605LL Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in	Original	PDF
JDSU EPM Abstract: 635-75 EPM635-75 JDS Uniphase photodiode epm 606LL-250 pin Photodiode 1550 nm dual photodiode EPM(R)-04-V L-Band 1200-1400 MHz photodiode 1550 nm Text: COMMUNICATIONS COMPONENTS C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm EPM 606 • Packaging - Single mode 900 µm fiber with or without a connector	Original	PDF	498-JDSU 5378-JDSU JDSU EPM 635-75 EPM635-75 JDS Uniphase photodiode epm 606LL-250 pin Photodiode 1550 nm dual photodiode EPM(R)-04-V L-Band 1200-1400 MHz photodiode 1550 nm
InGaAs Epitaxx EPM Abstract: JDS Uniphase photodiode epm 605 606L EPM605LL JDS Uniphase photodiode epm EPITAXX 605 EPITAXX PIN Photodiode 4 Ghz 1550 nm pin photodiode 1550 sensitivity EPITAXX EPM Text: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 Preliminary Specifications C-Band Monitor L-Band Monitor Pass Band Monitor General Purpose Monitor Conditions unless noted : Temperature = 25°C, VR = 5V	Original	PDF
diode code m10 Abstract: avalanche photodiodes 1650nm APD 10ghz Text: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area	Original	PDF
InGaAs photodiode 1310 1550 Abstract: InGaAs photodiodes 1310 1550 PD-1500 pin PD connector SC 1550 photodiode 1550 nm Text: Optoway PD-1500 * InGaAs PIN PD MODULES PD-1500 SERIES InGaAs PIN PHOTODIODE WITH RECEPTACLE * *	Original	PDF	PD-1500 PD-1500 InGaAs photodiode 1310 1550 InGaAs photodiodes 1310 1550 pin PD connector SC 1550 photodiode 1550 nm
Untitled Abstract: No abstract text available Text: PD LD Inc. PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector	Original	PDF	10meter
PIN photodiode 1310 Abstract: PD-1500 InGaas PIN photodiode, 1550 Text: Optoway PD-1500 * InGaAs PIN PD MODULES PD-1500 SERIES InGaAs PIN PHOTODIODE WITH RECEPTACLE *	Original	PDF	PD-1500 PD-1500 PIN photodiode 1310 InGaas PIN photodiode, 1550
InGaAs Photodiode 1550nm Abstract: avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550 Text: PD LD PDINK Series InGaAs Avalanche Photodiodes Inc. InGaAs APD’s PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate 55 micron diameter active area APD’s that responds optimally to	Original	PDF	10meter InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550

analog PIN Photodiode 3GHz Abstract: Receptacle InGaAs Photodiode 1550nm PDINJ075FCCB-O-V-MM Text: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector	Original	PDF
PD-1100 Abstract: InGaAs photodiodes 1310 1550 InGaAs photodiode 1310 1550 InGaAs Photodiode 1550nm Text: Optoway PD-1100 * InGaAs PIN PHOTODIODES PD-1100 SERIES *	Original	PDF	PD-1100 PD-1100 InGaAs photodiodes 1310 1550 InGaAs photodiode 1310 1550 InGaAs Photodiode 1550nm
Infrared detectors Abstract: dark detector application ,uses and working Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use	Original	PDF
Untitled Abstract: No abstract text available Text: Optoway PD-1350 * Mini-Size InGaAs PIN PD MODULE PD-1350 InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL	Original	PDF	PD-1350 PD-1350
inGaAs photodiode 1550 Abstract: PD-1100 InGaAs Photodiode 1550nm Text: Optoway PD-1100 * InGaAs PIN PHOTODIODES PD-1100 SERIES *	Original	PDF	PD-1100 PD-1100 inGaAs photodiode 1550 InGaAs Photodiode 1550nm
VCSEL 1550 nm 1 Gbps Abstract: PY-CK11 Text: Preliminary specification 1300/1550nm 1~4 Gbps InGaAs PIN Photodiodes Part number: PY-CK11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time (20%/80%) Conditions -3 V -3 V 1µA - 3 V, 1 MHz	Original	PDF	1300/1550nm PY-CK11 1310nm 460x250 PY-CK11 VCSEL 1550 nm 1 Gbps
PD-1150-075 Abstract: PD-1150-100 PD-1150-XXX PD-1155-075 PD-1155-XXX photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm Text: Optoway PD-1150-XXX * InGaAs PIN PHOTODIODES PD-1150-XXX PIN Photodiode with Mini-Size TO Package	Original	PDF	PD-1150-XXX PD-1150-075 PD-1150-100 PD-1150-150 PD-1155-XXX PD-1150-075 PD-1150-100 PD-1150-XXX PD-1155-075 PD-1155-XXX photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm
VCSEL die bonding Abstract: PY-CT11 InGaAs 0.85 um Text: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz	Original	PDF	1300/1550nm 10Gbps PY-CT11 1310nm 460x250 PY-CT11 VCSEL die bonding InGaAs 0.85 um
Untitled Abstract: No abstract text available Text: Bauelemente fur die LWL-Technik Semiconductor Devices for FiberOptic Systems Detektoren f ur Glasfaseranwendungen Detectors for glass fiber applications InGaAs/InP-PIN-Fotodioden InGaAs/lnP PIN photodiodes fur das 2. 1300 nm und 3. (1550 nm) DurchlaBfenster	OCR Scan	PDF	81314Z L51214Z 51414Z L81314Z L51414Z 62702P3033 51214Z
fld3c2pj Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG Text: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o	OCR Scan	PDF	14-pin 4001EH 4002EH 4004EK 622Mb/s 4005EK fld3c2pj FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG

Privacy Settings

INGAAS PHOTODIODES 1310 1550 Search Results

INGAAS PHOTODIODES 1310 1550 Result Highlights (5)

INGAAS PHOTODIODES 1310 1550 Datasheets Context Search

VCSEL die bonding

forward reverse schematic diagram

Ge APD

EPM635-75

InGaas PIN photodiode, 1550 ,sensitivity

JDSU EPM

JDS Uniphase photodiode epm 605

JDSU EPM

InGaAs Epitaxx EPM

diode code m10

InGaAs photodiode 1310 1550

Untitled

PIN photodiode 1310

InGaAs Photodiode 1550nm

analog PIN Photodiode 3GHz

PD-1100

Infrared detectors

Untitled

inGaAs photodiode 1550

VCSEL 1550 nm 1 Gbps

PD-1150-075

VCSEL die bonding

Untitled

fld3c2pj