RUTTONSHA all diodes
Abstract: R1600B RUTTONSHA 12 FM 120 all diodes RUTTONSHA POWER DIODE RUTTONSHA diodes RUTTONSHA diode RUTTONSHA diode 12 fm 40 200AB R1600 DO200AB
Text: Ruttonsha International Rectifier Ltd. STANDARD RECOVERY DIODES RUTTONSHA High Power Diode Hockey Puk Version R1600 B.C Series Types : R1600PB 04 to R1600PB 25 R1600PB B - PUK FEATURES ❖ Wide current range ❖ High voltage ratings up to 2500 V ❖ High surge current capabilities
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R1600
R1600PB
R1600PB
200AB
R1600B
RUTTONSHA all diodes
RUTTONSHA 12 FM 120 all diodes
RUTTONSHA POWER DIODE
RUTTONSHA diodes
RUTTONSHA diode
RUTTONSHA diode 12 fm 40
200AB
DO200AB
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IRFN054
Abstract: No abstract text available
Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91543B
IRFN054
IRFN054
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Untitled
Abstract: No abstract text available
Text: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides
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PD-95818B
O-257AA)
IRHYB67230CM
IRHYB63230CM
90MeV/
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides
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PD-96925
O-257AA)
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD - 91860 IRHNA57160 IRHNA58160 REPETITIVE AVALANCHE AND dv/dt RATED MOSFET TRANSISTOR N - CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD MOSFET 100Volt, 0.011Ω Product Summary International Rectifier’s RAD HARD technology MOSFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation
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IRHNA57160
IRHNA58160
100Volt,
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IRHYS67230CM
Abstract: IRHYS63230CM PD-96925B
Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides
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PD-96925B
O-257AA)
IRHYS67230CM
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
PD-96925B
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IRFY140C
Abstract: IRFY140CM
Text: Provisional Data Sheet No. PD 9.1287B IRFY140CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1287B
IRFY140CM
IRFY140C
IRFY140CM
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IRF140
Abstract: irf140 ir IRF1401
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
param252-7105
IRF140
irf140 ir
IRF1401
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Untitled
Abstract: No abstract text available
Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF140
O-204AA/AE)
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IRFN054
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFN054
IRFN054
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Untitled
Abstract: No abstract text available
Text: PD-95818D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYB67230CM Radiation Level 100K Rads (Si) IRHYB63230CM 300K Rads (Si) RDS(on) I D 0.13Ω 16A 0.13Ω 16A International Rectifier’s R6 TM technology provides
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PD-95818D
O-257AA)
IRHYB67230CM
IRHYB63230CM
90MeV/
5M-1994.
O-257AA.
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DIODE SMD 55a
Abstract: ir mosfet smd package smd 2f IRFN054
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFN054
DIODE SMD 55a
ir mosfet smd package
smd 2f
IRFN054
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IRFY140CM
Abstract: IRFY140C
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1287B IRFY140CM HEXFET POWER MOSFET N-CHANNEL Product Summary 100 Volt, 0.077Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1287B
IRFY140CM
IRFY140CM
IRFY140C
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I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PO 9.1287B International I G R Rectifier HEXFET PO W E R M O S F E T IRFY140CM N -C H A N N E L Product Summary 100 Volt, 0.077Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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1287B
IRFY140CM
D0S4S11
I1092
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2N7218
Abstract: 0535t
Text: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM140 SN7S18 JANTXSN7S18 JANTXVSN7S18 N-CHANNEL [REF: MIL-S-195DO/596] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFM140
SN7S18
JANTXSN7S18
JANTXVSN7S18
MIL-S-195DO/596]
parameter50)
IRFM14QD
IRFM140U
O-254
2N7218
0535t
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.486C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM140 2N-721S JANTXSN7S18 JANTXV2N7218 N-CHANNEL [REF: MIL-S-19SOO/596] 100 Volt, 0.077 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFM140
2N-721S
JANTXSN7S18
JANTXV2N7218
MIL-S-19SOO/596]
IRFM140D
IRFM140U
OutlineTO-254
MIL-S-19500
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IQR 2400
Abstract: R38B30A SS452 A3 82
Text: II«R T-Ol-3-3 4Ö55452 0010035 3 INTERNATIONAL RECTIFIER 82 R38B SERIES 3000-2400 VOLTS RANGE 1090 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES vol. TACE RATINdS VHRH> VR - V Han« rap« peak rovarae and direct voltage Tj a -40° to 175°C t i R30B3OA
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00-200AB
IQR 2400
R38B30A
SS452
A3 82
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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JANTX2N7334
Abstract: irfy430
Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6
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irfg110
M0-036AB
2n7334
jantx2n7334
jantxv2n7334
irfg5110
irfg6110
2n7336
irfy430
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Untitled
Abstract: No abstract text available
Text: Bulletin 127105 rev. A 0 9 /97 International IGR Rectifier T.RIA SERIES MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules 50 A 70 A 90 A Features • Electrically Isolated base plate ■ Types up to 1600 V RRM ■ 3500 V RMg Isolating voltage ■ Simplified mechanical designs,
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E78996
i501z
0D3004G
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EI96
Abstract: EI-96 EI96-12
Text: •NTÇüNATiJ*-;«.,.tt . International IÖ R Rectifier !tt> 5è Diodes ANN:ViKS«r 10. V^|»@7tX Port Number VRW* M •fav @ tc (A (Q 'f(AV) (V) >FSM 50 Hi 60Hi RGMC{DC) (A) (A) (°C/W) Fox on Demand Number Notes Cose Outline Key Power Module IRKE91/10
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IRKE91/10
RKE91/12
IRKE91/14
IRKE91/16
TRKEI66-04
IRKE166-12
EI96-08
EI96-12
IRKE196-16
IRKE236-04
EI96
EI-96
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SD1100C
Abstract: No abstract text available
Text: Bulletin 12073 rev. C 02/97 International i ö r Rectifier SD1100C.L s e r ie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1 1 7 0 A • W ide current range ■ High voltage ratings up to 3200V ■ High surge current ca p abilities ■ D ittused junction
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SD1100C.
DQ-200AB
SD1100C
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Untitled
Abstract: No abstract text available
Text: Bulletin 12066 rev. B 09/94 International i ö r Rectifier SD303C.C FAST RECOVERY DIODES s e r ie s Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 2.0 fis recovery tim e ■ High voltage ratings up to 2500V ■ High current ca pability
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SD303C.
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smd diode sm 3c
Abstract: tr/smd diode sm 3c
Text: |p |-0 p p jQ j-jQ P |Q | Provisional Data Sheet No. PD-9.1543A IQ R Rectifier HEXFET POWER MOSFET IRFN0S4 N -C H A N N E L 60 Volt, 0.020Q HEXFET Product Summary H E X F E T technology is the key to International Rectifier's advanced line of power MOSFET transis
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