HTRB
Abstract: IR25XB06 T-14100
Text: RELIABILITY REPORT 0220 RBV BRIDGE SERIES QUALIFICATION REPORT International Rectifier Corporation Italy RELIABILITY LABORATORY INTERNATIONAL RECTIFIER CONTENTS Section 1 Introduction and Purpose: 2 Issue: 3 Process Description: 4 Executive Summary: 5 Environmental Stress Test Plan:
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IR25XB06.
IR25XB06
B01219-4C
B011219-4C
K0201040024
HTRB
IR25XB06
T-14100
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D468
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • MflSSMSB 0017SDE 765 ■ INR PD-2.282 International H Rectifier 440CNQ030 SCHOTTKY RECTIFIER 440 Amp Major Ratings and Characteristics Characteristics !F AV Rectangular waveform V RRM Descri ption/Featu res 440CNQ030 Units
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0017SDE
440CNQ030
440CNQ030
D-467
435545Z
D-468
D468
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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kaab
Abstract: kaab 200 R34B4B R34B8A R34B8B
Text: INTERNATIONAL RECTIFIER IOR 73 D | 4055455 □0□7Ebb 3 INTERNATIONAL RECTIFIER • ! 7 ^ - ö / - 2 .3 Tiata Sheet No. PD-2.155 R34B SERIES 1000-400 VOLTS RANGE 1340 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VRRM* VR " M
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R34B1QA
R34B8A
R34B8B
R34B4B
S54S2
ODOTEb11]
D0-200AB
kaab
kaab 200
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Untitled
Abstract: No abstract text available
Text: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32
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IRFAC30
IRFAC32
G-221
MAS54S2
IRFAC30,
IRFAC32
G-222
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g371
Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International
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T-39-Ã
G-376
g371
IRFF330
IRFF331
IRFF332
IRFF333
510 MOSFET
EC07
CIRCUIT g371
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2sc 1740 TRANSISTOR equivalent
Abstract: 40HFL60 IRGMC40F 480V1
Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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pd96a
IRGMC40F
IRGMC40FD
IRGMC40FU
MIL-S-19500
O-254
2sc 1740 TRANSISTOR equivalent
40HFL60
IRGMC40F
480V1
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • 4flSSMSS 0 0 1 7 2 0b bfifi ■ INR PD-2.322 International [iorj Rectifier m br 253s c t m br 2545c t SCHOTTKY RECTIFIER 30 Amp Ma]or Ratings and Characteristics Characteristics Description/Features MBR25.CT Units lF AV Rectangular
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2545c
MBR25.
T0-220
12CTQ
12CTQ045
D-477
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1RF540
Abstract: RF540 mosFET 1RF540 IRF540 application note Application Note of IRF540 IRF540 International Rectifier irf540 mosfet control motor irf541 IRF540 application irf540 spice
Text: HE D I 4Ö55452 0000450 b | Data Sheet No. PD-9.373G INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRFS4Q IRFS41 IRF542 IRFS43 HEXFEF TRANSISTORS N-CHANNEL
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O-220AB
C-213
RF540,
IRF541,
IRF542,
IRF543
T-39-13
1RF540
RF540
mosFET 1RF540
IRF540 application note
Application Note of IRF540
IRF540 International Rectifier
irf540 mosfet control motor
irf541
IRF540 application
irf540 spice
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EL017
Abstract: R34BF18A INTERNATIONAL RECTIFIER GUIDE
Text: dar 48 IO R 3 D I MühiHhd UOUäUiM 02E 0 6 0 1 4 D -T ^& 3 -¿13 Data Sheet No. PD-2.123 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER R34BF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 430 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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h54hd
R34BF
T-03-3-3
D0-200AB
E1017
EL017
R34BF18A
INTERNATIONAL RECTIFIER GUIDE
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D0205AB
Abstract: R230F
Text: 4855452 INTERNATIONAL RECTIFIER IOR 02E 07876 D 7 » û J ^ j Data Sheet no. h u -ü .i00 INTERNATIONAL. RECTIFIER DE 1 4055452 GÜ07fl7b û | R23DF AND R23DFR SERIES 800-600 VOLTS RANGE REVERSE RECOVERY TIME 0 .9//S 190 AMP AVG STUD MOUNTED SOFT FAST RECOVERY RECTIFIER DIODES
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554S2
R23DF
R23DFR
R230F
R230FR
R230GFR8A.
D0-205AB
R23DGF
R23DGFR
E1017
D0205AB
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RP150X1.500-DFT UB
Abstract: IQR 2400 hal 02e B300 type ev 8200 - E
Text: OSE D I 4ÖSSMSE □□□7TT0 t TOR 02E 07990 international . RECTIFIER D 7 “V ¿J 3 - £ 3 Data Sheet No. PD-2.119 INTERNATIONAL RECTIFIER o R30EF SERIES 2400-2200 VOLTS RANGE REVERSE RECOVERY TIME 2.75//S 410 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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R30EF
R30EF22A.
485S452
RP150X1.500-DFT UB
IQR 2400
hal 02e
B300
type ev 8200 - E
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250R
Abstract: R30EF6A
Text: 4855 IOR 05E D I 4855452 D G t m b b T | “ 02E 07966 D ^3-^3 Data Sheet No. PD-2.115 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER R30EF SÉRIÉS 800-600 VOLTS RANGE REVERSE RECOVERY TIME 0.9//S 595 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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4fl5545E
R30EF
R30EF6A.
250R
R30EF6A
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g419
Abstract: G-424 g424 lg diode 923 TC1602e 384F IRFF130 IRFF9230 IRFF9231 IRFF9232
Text: HE D I 4055452 □□0C!44E ? | Data Sheet No. PD-9.384F INTERNATIONAL R E C T IFIE R INTERNATIONAL RECTIFIER T -3 9 -1 9 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE IRFF9231 G IRFFS232 ^—6s -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET® technology is the key to International Rectifier’s
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T-39-19
IRFFS230
IRFF9233
G-424
g419
G-424
g424
lg diode 923
TC1602e
384F
IRFF130
IRFF9230
IRFF9231
IRFF9232
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IRF624
Abstract: No abstract text available
Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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T-39-11
T0-220AB
C-239
IRF624,
IRF625
C-240
IRF624
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F9530
Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s
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T0-220AB
C-341
43S54S2
IRF9530,
IRF9531,
IRF9532,
IRF9533
T-39-21
C-342
F9530
diode C339
IRF9530
C337 W 63
complementary of irf9530
C337 W
IRF9530 complementary
diode c341
IRF9532
IR 9530
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Untitled
Abstract: No abstract text available
Text: dar 48 IO R 3 D I MühiHhd UOUäUiM 02E 0 6 0 1 4 D -T ^ & 3 -¿ 1 3 Data Sheet No. PD-2.123 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER R34BF SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0//S 430 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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R34BF
R34BF
R34BF18A.
D0-200AB
E1017
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irfae42
Abstract: JRFAE42
Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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IRFAE40
IRFAE42
O-204AA
G-237
IRFAE40,
IRFAE42
S54S2
G-238
JRFAE42
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9314h
Abstract: International Rectifier MOSFET 443 K 3911 1RF322
Text: HE 0 I Mfl5SMS2 QOQTlEâ 1 | Data She£t No. PO-9.314H T - ¿ 7 -^ INTERNATIONAL RECTIFIER INTERNATIONAL- RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED' IR F320 HEXFET TRANSISTORS IRF321 1RF322 IRF323 N-CHANNEL Product Summary 400 Volt, 1.8 Ohm HEXFET
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IRF321
1RF322
IRF323
T0-204AA
G-111
IRF320,
IRF321,
IRF322,
IRF323
T-39-11
9314h
International Rectifier MOSFET 443
K 3911
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IRFG43
Abstract: motor driver IRF640
Text: HE 0 I 4055455 0000504 1 | Data Sheet No. PD-9.374F ST- A T INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFS40 IRFG41 IRF642 IRFG43 N-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-220AB Plastic Package
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IRFS40
IRFG41
IRF642
IRFG43
T0-220AB
IRF640
IRF641
IRF643
C-259
IRFG43
motor driver IRF640
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60sq045
Abstract: 60SQ100 50SQ060 60SQ060 50SQ 50SQ030 50SQ035 50SQ040 50SQ045 50SQ080
Text: _ * INTERNATIONAL RECTIFIER 4855452 SS INTERNATIO NAL DE | 4055455 ODOSDS1 5 | 55C R EC T IF IER 05051 Data Sheet No. PD-2.060A T -c 3 - / y IOR INTERNATIONAL RECTIFIER 50SQ SERIES 5 Amp Schotfcky Power Rectifiers Description/Features Major Ratings and Characteristics
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00050S1
60sq045
60SQ100
50SQ060
60SQ060
50SQ
50SQ030
50SQ035
50SQ040
50SQ045
50SQ080
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IR2113 APPLICATION NOTE
Abstract: IR2113 16 pin
Text: INTERNATIONAL RECTIFIER bSE î • 4Ö55M52 GCUÖ2G2 TET ■ INR Data Sheet No. PD-6.021 INTERNATIONAL. RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IRS113 General Description Features The IR2113 is a high voltage, high speed MOSgated power device driver with independent high side
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55M52
IRS113
IR2113
D-6380
IR2113 APPLICATION NOTE
IR2113 16 pin
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Untitled
Abstract: No abstract text available
Text: International IÖ R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power M OSFET Generation V Technology Ultra Low On-Reslstance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20V ^ D S o n = 0.029Î2 Description Fifth Generation HEXFETsfrom International Rectifier
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1435B
IRF7311
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irf P-Channel MOSFET audio
Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
Text: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:
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SS452
T-39-19
IRFS620
IRFSG21
T0-220AB
IRF9620,
IRF9621,
IRF9622,
IRF9623
irf P-Channel MOSFET audio
IRF610 complementary
F9622
power MOSFET IRF610
IRF9621
rf9620
irf9622
k 3919
F9620
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