Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IPB06CN10N Search Results

    SF Impression Pixel

    IPB06CN10N Price and Stock

    Infineon Technologies AG IPB06CN10N-G

    MOSFET N-CH 100V 100A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB06CN10N-G Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.65944
    • 10000 $1.63913
    		Buy Now

    Infineon Technologies AG IPB06CN10NG

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IPB06CN10NG 688
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    IPB06CN10N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB06CN10NG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A TO263-3 Original PDF
    IPB06CN10N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF
    IPB06CN10NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPB06CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A ds 1-08 diode J 6920 06cn10n JESD22 PG-TO220-3

    J 6920

    Abstract: J 6920 A
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 J 6920 J 6920 A

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP